DS3617 Search Results

DM74366

Abstract: DS16149J C1995 DM8096 DS16149 DS16179 DS36149 DS36149J DS36179 7553
Contextual Info: DS16149 DS36149 DS16179 DS36179 Hex MOS Drivers General Description Features The DS16149 DS36149 and DS16179 DS36179 are Hex MOS drivers with outputs designed to drive large capacitive loads up to 500 pF associated with MOS memory systems PNP input transistors are employed to reduce input currents

DS1617

Contextual Info: Memory Support DS1617/DS3617 Bubble Memory Sense Amplifier G eneral D escription Featu res T h e DS1617 a n d th e DS3617 a re b u b b le m e m o ry s e n se a m p lifie rs th a t c o n v e rt lo w level s ig n a ls fro m m a g n e to -re s is tiv e d e te c to rs o f th e b u b b le m e m o ry in to T T L c o m p a t­

MM4220DF/MM5220DF

Abstract: mm5221 MM4240 DS8807 MM5017 54S287 MM1402a equivalent transistor bf 175 MM74C920 MM5061
Contextual Info: Edge Index by Product Family NATIONAL This is National's first Memory handbook containing information on MOS and Bipolar Memory Components, Systems, Application Notes and Support Circuits. For detailed information on Interface Circuits and other major product lines, contact a National sales office, representative, or distributor.

MIC710

Abstract: XC6875 MC1741L C4558C SG425 mc7724c NE533V General Instrument data book 741p SN75107
Contextual Info: Master Index and Cross Reference Guide M IL-M -38510 Program and Chip Information Operational Amplifiers Voltage Regulators Interface Circuits Voltage Comparators Consumer Circuits Other Linear Circuits Package Information and Mounting Hardware Application Notes

Contextual Info: DMP56D0UFB Green Product Summary P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) -50V 6Ω @ VGS = -4 V 8Ω @ VGS = -2.5V ID TA = +25°C -200mA -160mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching

DS88L12

Abstract: w1s dual transistor mm5704 lm325 Zener diode 10b3 MM5013 MM1103 DS0056 ds3674 MA2805
Contextual Info: INTRODUCTION MOS memories present unique system and circuit challenges to the engineer since they require precise timing of input waveforms Since these inputs present large capacitive loads to drive circuits it is often that timing problems are not discovered until an entire system is constructed

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Contextual Info: DMP56D0UV Green DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(ON) -50V 6Ω @ VGS = -4 V 8Ω @ VGS = -2.5V ID TA = +25°C -160mA -120mA Descriptions This new generation MOSFET has been designed to minimize the

Contextual Info: PSMAJ440A Green 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features Mechanical Data • 400W Peak Pulse Power Dissipation • • Excellent Clamping Capability • • Fast Response Time • Lead-Free Finish; RoHS Compliant Notes 1 & 2 • Moisture Sensitivity: Level 1 per J-STD-020

DS3615

Abstract: NBM2256 tazer 74LS164 74LS165 NBC82853 MC811 microbus FAIU
Contextual Info: December19£ p r e lim in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S e m iconductor’s NBM2256 256k-bit magnetic bubble memory. The control­

DS1647D

Abstract: DS3647D
Contextual Info: Memory Support DS1647/DS3647, DS16777DS3677, DS161477DS36147, DS36177 Quad TRI-STATE MOS Memory I/O Registers General Description The D S 16 4 7 /D S 36 4 7 series are 4 -b it I/O b u ffe r registers intended fo r use in MOS m e m ory systems. The circu its

P618SK

Abstract: DMP6180SK3
Contextual Info: DMP6180SK3 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID TC = +25°C •  Low Input Capacitance 110mΩ @ VGS = -10V -14A  Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) 140mΩ @ VGS = -4.5V -12A  Halogen and Antimony Free. “Green” Device (Note 3)

bubble memory

Contextual Info: p r e l im in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S em icon ducto r’s NBM2256 256k-bit m agnetic bubble memory. The control­ ler is designed so that a m inim um of interface circuitry is

Contextual Info: AH1812 HIGH SENSIVITY MICROPOWER OMNIPOLAR HALL-EFFECT SWITCH Description Pin Assignments The AH1812 is a high sensitivity micropower Omnipolar Hall effect switch IC with an open drain output. Designed for portable and battery powered equipment such as cellular phones and portable PCs, the