DS3615 Search Results

bubble memory

Abstract: bubble memories memory bubble magnetic bubble memories DS3615 NBM2256
Contextual Info: Magnetic Bubble Memories PREV,EW DS3615 Bubble Memory Function Driver General Description Features TTL com patible inputs Operates from tw o standard supplies: + 5V , + 12 V PNP inpu ts m inim ize loading B uilt-in voltage boost c irc u itry — does not require an extra

bubble memory

Abstract: bubble
Contextual Info: Magnetic Bubble Memories prew ew DS3615 Bubble Memory Function Driver General Description Features TTL compatible inputs Operates from two standard supplies: +5V, +12V PNP inputs minimize loading Built-in voltage boost circuitry—does not require an extra

KZ3 SOT23

Contextual Info: BZX84B2V7 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • 2% Tolerance on VZ   350mW Power Dissipation   Zener Voltages from 2.7V - 39V Case: SOT23 Case Material: Molded Plastic “Green” Molding Compound.

DS3615

Abstract: 1N914 DS3616N N16A Bubble Memory
Contextual Info: DS3616 Bubble Memory Coil Driver General Description Features The DS3616 bubble m em ory c o il driver provides the functio n of driving the high current c o lls of a bubble m em ory device. The co n tro l inputs A, B, CS and HLD-EN are TTL com patible to insure easy Interfacing to M O S con trol circuits. Internal logic co n tro ls th é o u tp u t sin k in g and sourcing tra n s is to rs to drive the X and Y bubble m em ory c o ils in

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

NBM2256

Abstract: generator with magnetic permanent magnetic bubble memories bubble memory bubble memories
Contextual Info: Magnetic Bubble Memories « « iew NBM2256 Bubble Memory General Description National Semiconductor’s NBM2256 is a low cost, non-volatile, highly reliable solid state memory that uses magnetic bubble technology. The NBM2256 has the form of a dual-in-line package

KZ2 sot23

Abstract: KZ3 SOT23 diode kz9 zener KZE sot23 part marking b36 diode marking kyb zener b39 Marking B15 B18 SOT23 KY6 sot23 marking B33 diode
Contextual Info: BZX84B3V0 - BZX84B39 350mW SURFACE MOUNT PRECISION ZENER DIODE Features Mechanical Data • • • • • • • • • ±2% Tolerance on VZ 350mW Power Dissipation Zener Voltages from 3.0V - 39V Ideally Suited for Automated Assembly Processes Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

DS3615

Abstract: NBM2256 tazer 74LS164 74LS165 NBC82853 MC811 microbus FAIU
Contextual Info: December19£ p r e lim in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S e m iconductor’s NBM2256 256k-bit magnetic bubble memory. The control­

DMP2047UCB4

Contextual Info: DMP2047UCB4 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(ON) -20V 47mΩ @ VGS = -4.5V 60mΩ @ VGS = -2.5V ID TA = +25°C -4.1A -3.6A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON) and yet maintain superior switching

bubble memory

Contextual Info: p r e l im in a r y NBC82851256k-Bit Bubble Memory Controller General Description The NBC82851 is a dedicated bubble memory controller designed fo r use w ith N ational S em icon ducto r’s NBM2256 256k-bit m agnetic bubble memory. The control­ ler is designed so that a m inim um of interface circuitry is

FMMT617

Abstract: FMMT-617 FMMT617TA
Contextual Info: A Product Line of Diodes Incorporated FMMT617 15V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 15V IC = 3A high Continuous Collector Current ICM = 12A Peak Pulse Current

Contextual Info: DS3616 Bubble Memory Coil Driver Features General Description The DS3616 bubble m em ory c o il driver provides the functio n o f driving the high current c o lls o f a bubble m em ory device. The co n tro l inpu ts A, B, CS and HLD-EN are TTL co m patible to insure easy Interfa cin g to MOS con trol cir, .u • . » •