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    FCH76N60N Search Results

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    FCH76N60N Price and Stock

    Rochester Electronics LLC FCH76N60N

    POWER FIELD-EFFECT TRANSISTOR, 7
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    onsemi FCH76N60N

    MOSFET N-CH 600V 76A TO247-3
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    TME FCH76N60N 1
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    Ameya Holding Limited FCH76N60N 121
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    onsemi FCH76N60NF

    MOSFET N-CH 600V 72.8A TO247-3
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    Verical () FCH76N60NF 4,870 26
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    FCH76N60NF 314 26
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    Rochester Electronics FCH76N60NF 5,369 1
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    TME FCH76N60NF 1
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    Rochester Electronics LLC FCH76N60NF

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    FAIRCHILD FCH76N60NF

    Trans MOSFET N-CH 600V 72.8A 3-Pin(3+Tab) TO-247 Rail
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    Verical () FCH76N60NF 27,238 26
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    FCH76N60NF 900 26
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    FCH76N60NF 218 26
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    FCH76N60N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    FCH76N60N
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 76A TO-247 Original PDF 8
    FCH76N60NF
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 72.8A TO247-3 Original PDF 8

    FCH76N60N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FCH76N60

    Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		FCH76N60N FCH76N60N 218nC) FCH76N60 PDF

    FCH76N60

    Contextual Info: SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		FCH76N60NF FCH76N60NF 230nC) FCH76N60 PDF

    FCH76N60NF

    Contextual Info: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		FCH76N60NF 230nC) FCH76N60NF PDF

    fch76n60nF

    Contextual Info: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology


    Original     		FCH76N60NF FCH76N60NF PDF

    Contextual Info: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		FCH76N60NF 230nC) PDF

    Contextual Info: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		FCH76N60NF PDF

    FCH76N60NF

    Contextual Info: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		FCH76N60NF FCH76N60NF PDF

    Contextual Info: FCH76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		FCH76N60N PDF

    Contextual Info: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 31.5mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		FCH76N60NF FCH76N60NF 230nC) PDF

    FCH76N60N

    Abstract: FCH76N60 N-Channel mosfet 600v ir
    Contextual Info: SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		FCH76N60N 218nC) FCH76N60N FCH76N60 N-Channel mosfet 600v ir PDF

    Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		FCH76N60N FCH76N60N 218nC) PDF

    fch76n60n

    Abstract: 9310 Fairchild SJ 76 A DIODE
    Contextual Info: FCH76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A Description • Ultra Low Gate Charge (Typ.Qg = 218 nC) The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology


    Original     		FCH76N60N FCH76N60N 9310 Fairchild SJ 76 A DIODE PDF