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    FCH76N60N Search Results

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    FCH76N60N Price and Stock

    Rochester Electronics LLC FCH76N60NF

    POWER FIELD-EFFECT TRANSISTOR, 7
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    DigiKey FCH76N60NF Bulk 539 24
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    onsemi FCH76N60N

    MOSFET N-CH 600V 76A TO247-3
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    Avnet Americas FCH76N60N Tube 4 Weeks 24
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    Newark FCH76N60N Bulk 30
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    TME FCH76N60N 1
    • 1 $26.34
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    • 100 $21.1
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    Rochester Electronics LLC FCH76N60N

    POWER FIELD-EFFECT TRANSISTOR, 7
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    DigiKey FCH76N60N Bulk 20
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    • 100 $15.13
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    onsemi FCH76N60NF

    MOSFET N-CH 600V 72.8A TO247-3
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    Avnet Americas FCH76N60NF Tube 4 Weeks 29
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    • 1000 $11.7744
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    Rochester Electronics FCH76N60NF 539 1
    • 1 $13
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    • 100 $12.22
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    TME FCH76N60NF 1
    • 1 $22.44
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    Fairchild Semiconductor Corporation FCH76N60N

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    Bristol Electronics FCH76N60N 300
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    Quest Components FCH76N60N 240
    • 1 $19.17
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    • 100 $14.91
    • 1000 $13.632
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    Rochester Electronics FCH76N60N 323 1
    • 1 $15.28
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    • 100 $14.36
    • 1000 $12.99
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    Find more FCH76N60N price and stock on Findchips.com

    FCH76N60N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FCH76N60N Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 76A TO-247 Original PDF
    FCH76N60NF Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 72.8A TO247-3 Original PDF

    FCH76N60N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FCH76N60

    Abstract: No abstract text available
    Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCH76N60N FCH76N60N 218nC) FCH76N60

    FCH76N60

    Abstract: No abstract text available
    Text: SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCH76N60NF FCH76N60NF 230nC) FCH76N60

    FCH76N60NF

    Abstract: No abstract text available
    Text: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCH76N60NF 230nC) FCH76N60NF

    fch76n60nF

    Abstract: No abstract text available
    Text: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.)@ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology


    Original     		PDF FCH76N60NF FCH76N60NF

    Untitled

    Abstract: No abstract text available
    Text: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 28.7mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCH76N60NF 230nC)

    Untitled

    Abstract: No abstract text available
    Text: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCH76N60NF

    FCH76N60NF

    Abstract: No abstract text available
    Text: FCH76N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 72.8 A, 38 mΩ Features Description • RDS on = 28.7 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCH76N60NF FCH76N60NF

    Untitled

    Abstract: No abstract text available
    Text: FCH76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features Description • RDS on = 28 mΩ (Typ.) @ VGS = 10 V, ID = 38 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH76N60N

    Untitled

    Abstract: No abstract text available
    Text: TM SupreMOS FCH76N60NF tm 600V N-Channel MOSFET, FRFET Features Description • RDS on = 31.5mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCH76N60NF FCH76N60NF 230nC)

    FCH76N60N

    Abstract: FCH76N60 N-Channel mosfet 600v ir
    Text: SupreMOSTM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description • RDS on = 28mΩ ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCH76N60N 218nC) FCH76N60N FCH76N60 N-Channel mosfet 600v ir

    Untitled

    Abstract: No abstract text available
    Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based


    Original     		PDF FCH76N60N FCH76N60N 218nC)

    fch76n60n

    Abstract: 9310 Fairchild SJ 76 A DIODE
    Text: FCH76N60N N-Channel SupreMOS MOSFET 600 V, 76 A, 36 mΩ Features • RDS on = 28 mΩ (Typ.)@ VGS = 10 V, ID = 38 A Description • Ultra Low Gate Charge (Typ.Qg = 218 nC) The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCH76N60N FCH76N60N 9310 Fairchild SJ 76 A DIODE