FM24C16 Search Results

Contextual Info: FM24C16B 16-Kbit 2 K x 8 Serial (I2C) F-RAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features Functional Overview • 16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes

fm24c16

Abstract: FM24C16-P fram FM24C16-S MS-001
Contextual Info: FM24C16 16Kb FRAM Serial Memory Features Low Power Operation • 5V operation • 150 µA Active Current 100 kHz • 10 µA Standby Current 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion (1010) Read/Writes

flash "high temperature data retention" mechanism

Abstract: EEPROM retention testing FM24C16 flash Activation Energy
Contextual Info: Technology Note FM24C16 Data Retention Characterization – Updated 5/00 Overview Ramtron technology notes provide technical insight into the operation of ferroelectric memory technology. They explain the fundamental performance of one or more aspects of ferroelectric

atmel 24c16

Abstract: FM24C16 EEPROM 24C16 XICOR X24C16 24c16 datasheet atmel 24C16 datasheet st 24c16 24C16 AN-200 Ramtron FRAM Serial Memory
Contextual Info: AN-200 Advantages of the FM24C16 Serial 16Kb FRAM Memory Overview The FM24C16 is a drop-in replacement for industry standard 24C16-type EEPROMs. The 24C16 configuration is a 2-wire interface, 2,048x8 serial memory. Instead of using EEPROM as a storage mechanism, the FM24C16 uses FRAM technology.

FM24c16

Abstract: FM24C16-P 1E10 FM24C16-S MS-001 FM24C16A-S
Contextual Info: FM24C16 16Kb F RAM R a M IR O N Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

Contextual Info: FM24C16A 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1012 Read/Write Cycles • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM24C16B

Abstract: FM24C16 FM24C16A FM24C16A-G FM24C16A-GTR FM24C16A-S EEPROM 256 bytes 24c
Contextual Info: FM24C16A 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1012 Read/Write Cycles • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

fm24c16a-gtr

Abstract: FM24C16A-G FM24C16 FM24C16A FM24C16A-S
Contextual Info: FM24C16A 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1012 Read/Write Cycles • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM24C16

Abstract: 24C16 pinout detail 1E10 24C16 FM24C16-P FM24C16-S M24C16 MS-001
Contextual Info: FM24C16 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • No write delay • Advanced high-reliability ferroelectric process

24U16

Abstract: 24U17 24C166 24c16 6 24c16 device use and how to erase FM24C17UFLM8 CHIP 8-PIN 24c16 24U1 24u16l 24u16m8
Contextual Info: FM24C16U/17U – 16K-Bit Standard 2-Wire Bus Interface Serial EEPROM General Description Features The FM24C16U/17U devices are 16,384 bits of CMOS nonvolatile electrically erasable memory. These devices conform to all specifications in the Standard IIC 2-wire protocol. They are

Contextual Info: FM24C16 16Kb F R A M R aM T R O N Serial M em ory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

Contextual Info: FM24C16A 2-Wire Serial EEPROM Data Sheet May. 2011 Data Sheet FM24C16A 2-Wire Serial EEPROM Ver 1.1 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS GROUP CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION;

EM24C16

Abstract: FM24C16 1E10 FM24C16-P FM24C16-S MicroSecond Bus
Contextual Info: FM24C16 16Kb F R A M ft R a M T R O N Serial M em ory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

24C17

Abstract: CHIP 8-PIN 24c16 eeprom 24C16 5 pin 24C16 serial eeprom 24c16 wp EEPROM 24C16 24C16 FM24C17U FM24C32 M08A
Contextual Info: FM24C16U/17U – 16K-Bit Standard 2-Wire Bus Interface Serial EEPROM General Description Features The FM24C16U/17U devices are 16,384 bits of CMOS nonvolatile electrically erasable memory. These devices conform to all specifications in the Standard IIC 2-wire protocol. They are

24C16 equivalent

Abstract: 24c16 wp 24C16 serial eeprom XICOR X24C16 CHIP 8-PIN 24c16 "Ferroelectric RAM" 24c16 EEPROM DATA SHEET 24C16 eeprom 24C16 5 pin FM24C16
Contextual Info: FM24C16 FRAM Serial Memory Product Specification Features 16Kbit Nonvolatile Ferroelectric RAM Organized as 2,048 x 8 Very Low Power CMOS Technology - 100µA Active Read or Write - 25µA Standby Over Commercial Temperature Range • Reliable Thin Film Ferroelectric Technology

Contextual Info: FM24C16B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1012 Read/Write Cycles  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

FM24C16B

Contextual Info: Preliminary FM24C16B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1012 Read/Write Cycles  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

fm24c16c-g

Contextual Info: Preliminary FM24C16C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1012 Read/Write Cycles  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

24C17

Abstract: 28256 ti eeprom pin configuration DATA SHEET 24C16 24C16 FM24C17U FM24C32 M08A MTC08 24C16 program
Contextual Info: FM24C16U/17U – 16K-Bit Standard 2-Wire Bus Interface Serial EEPROM General Description Features The FM24C16U/17U devices are 16,384 bits of CMOS nonvolatile electrically erasable memory. These devices conform to all specifications in the Standard IIC 2-wire protocol. They are

Contextual Info: FM24C16A 2-Wire Serial EEPROM Data Sheet Oct. 2009 Data Sheet FM24C16A 2-Wire Serial EEPROM Ver 1.0 1 INFORMATION IN THIS DOCUMENT IS INTENDED AS A REFERENCE TO ASSIST OUR CUSTOMERS IN THE SELECTION OF SHANGHAI FUDAN MICROELECTRONICS CO., LTD PRODUCT BEST SUITED TO THE CUSTOMER'S APPLICATION; THEY DO

FM24Cxx

Abstract: FM24C04A FM24c16 AN-204 FM24C04 FM24C16A
Contextual Info: AN-204 Differences in FM24Cxx and FM24CxxA Applies to 16Kb and 4Kb FRAM Devices DESCRIPTION There are differences between “A” and “non-A” two-wire 4Kb and 16Kb FRAM devices. The FM24C04 and FM24C16 memory devices operate up to 400kHz, whereas the FM24C04A and FM24C16A operate at

FM24C16B

Abstract: FM24C16B-GTR FM24C16B-G FM24C16BG
Contextual Info: FM24C16B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1012 Read/Write Cycles  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: Preliminary FM24C16C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1012 Read/Write Cycles  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM24C16B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1012 Read/Write Cycles  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process