GP350MHB06S Search Results
GP350MHB06S Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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GP350MHB06S | Dynex | Half Bridge IGBT Module | Original | 128.02KB | 10 | |||
GP350MHB06S | Dynex | Half Bridge IGBT Module | Original | 130.25KB | 10 |
GP350MHB06S Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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GP350MHB06SContextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base |
Original |
GP350MHB06S DS4923-6 GP350MHB06S | |
GP350MHB06SContextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces October 2001 version, DS4923-5.0 FEATURES DS4923-6.0 April 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base |
Original |
GP350MHB06S DS4923-5 DS4923-6 GP350MHB06S | |
GP350MHB06S
Abstract: DS4923-5
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Original |
GP350MHB06S DS4923-4 DS4923-5 GP350MHB06S | |
Contextual Info: @ M ITEL GP350MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes August 1998 version, DS4923-3.0 DS4923 -3.1 D ecem ber 1998 The GP350MHB06S is a dual switch 600V robust n channel enhancem ent m ode Insulated G ate Bipolar Transistor IGBT module. Designed for low power loss |
OCR Scan |
DS4923-3 GP350MHB06S DS4923 GP350MHB06S | |
gp350Contextual Info: M ITEL GP350MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes August 1998 version, DS4923-3.0 DS4923 - 3.1 Decem ber 1998 The G P 350M H B 06S is a dual sw itch 600V robust n c h a n n e l e n h a n c e m e n t m ode In su la te d G ate B ip o la r |
OCR Scan |
DS4923-3 GP350MHB06S DS4923 gp350 | |
GP350MHB06SContextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base |
Original |
GP350MHB06S DS4923-6 GP350MHB06S | |
IGBT cross reference semikron eupec
Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
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Original |
DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40 | |
IGBT cross reference semikron eupec
Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
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Original |
DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40 | |
MP02X
Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
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OCR Scan |
ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA MP02X DCR10 DYNEX DG648 DCR1596SW DIM200PHM33 | |
108X62Contextual Info: powerline igbt modules IG B T M o d u le s Generic Part Number Voltage Grade Current Rating Circuit Type VcES V 'c (A) @ T case CQ Max. Saturation Current Voltage VCE(SAT) Rating (Typical) «CM (A) (V) Total Switching Energy Isolation Voltage (mJ) v« (kV) |
OCR Scan |
GP250MHB06S GP350MHB06S GP500LSS06S GP200MHS12 GP200MKS12 GP200MLS12 DIM400DDM12 DIM400LSS12 DIM800DDM12 DIM800FSM12 108X62 |