DS4923 Search Results

GP350MHB06S

Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

GP350MHB06S

Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces October 2001 version, DS4923-5.0 FEATURES DS4923-6.0 April 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

GP350MHB06S

Abstract: DS4923-5
Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4923-4.0 FEATURES DS4923-5.0 October 2001 KEY PARAMETERS • n - Channel VCES ■ High Switching Speed VCE sat (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base

Contextual Info: @ M ITEL GP350MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes August 1998 version, DS4923-3.0 DS4923 -3.1 D ecem ber 1998 The GP350MHB06S is a dual switch 600V robust n channel enhancem ent m ode Insulated G ate Bipolar Transistor IGBT module. Designed for low power loss

gp350

Contextual Info: M ITEL GP350MHB06S Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes August 1998 version, DS4923-3.0 DS4923 - 3.1 Decem ber 1998 The G P 350M H B 06S is a dual sw itch 600V robust n c h a n n e l e n h a n c e m e n t m ode In su la te d G ate B ip o la r

GP350MHB06S

Contextual Info: GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces April 2002 version, DS4923-6.0 FEATURES DS4923-6.1 july 2002 KEY PARAMETERS • n - Channel VCES 600V ■ High Switching Speed VCE sat * (typ) 2.0V ■ Low Forward Voltage Drop (max) 500A Isolated Base