HM514400AS Search Results

Contextual Info: H B 5 6 A 1 4 0 S e r ie s 1,048,576-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A140B/SB is a 1M x 40 dynamic RAM module, mounted 10 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A140B/SB is a 72-pin single In-line package. Therefore, the HB56A140B/

Contextual Info: HITACHI/ LOGIC/ARRAYS/MEM 51E D MM 1 b 5Q 3 OOlflS?«? fl73 • H I T S HM514400A Series HM514400AL Series Low P ow er Version HM514400ASL Series Super Low Pow er Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory HM514400AJ/AU/ALSJ Series

514400A

Abstract: M514400A 514400AZ
Contextual Info: HM514400A S e rie s -HM514400AL Series Low Power Version HM514400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random Access Memory HM514400AJ/A LJ/A LSJ Series • DESCRIPTION The Hitachi HM514400A is a C M O S dynamic RAM organized 1,048,576 word x

Contextual Info: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56G19 is a 1M x 9 dynamic RAM module, mount­ ed two 4 Mbit DRAM HM514400AS sealed in SOJ package and 1 Mbit DRAM (HM511000AJP) sealed in SOJ package.

Contextual Info: HB56A240 Series 2,097,152-Word x 40-Bit High Density Dynamic RAM Module • PINOUT ■ DESCRIPTION The HB56A240B/SB is a 2M x 40 dynamic RAM module, mounted 20 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A240B/SB is a 72-pin single in-line package. Therefore, the HB56A240B/

Contextual Info: HB56A140 Series 1,048,576-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56A140B/SB is a 1M x 40 dynamic RAM module, mounted 10 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A140B/SB is a 72-pin single in-line package. Therefore, the HB56A140B/

Contextual Info: H B 5 6 G 1 8 S e r ie s 1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56G18 is a 1M x 8 dynamic RAM module, mount­ ed two 4 Mbit DRAM HM514400AS sealed in SOJ pack­ age. An outline of the HB56G18 is 30-pin single in-line pack­

HB56D236BS7A

Contextual Info: blE ]> • 44cJtiED3 DDE3til3 103 ■ H I T E HB56D236 Series - hitachi/ logic/arrays/meh 2,097,152-Word x 36-Bit High Density Dynamic RAM Module The H B56D 236 is a 2M x 36 dynam ic RAM module, m ounted 16 pieces of 4-M bit DRAM HM514400AS/ALS sealed in SOI package and 8

Contextual Info: HM514400A S e rie s -HM514400AL Series Low Power Version HM514400ASL Series Super Low Power Version Preliminary 1,048,576-Word x 4-Bit Dynamic Random A c ce s s Memory HM 514400AJ/AU/ALSJ Series • DESCRIPTION The Hitachi HM514400A is a C M O S dynamic RAM organized 1,048,576 word x

hb56g19b

Contextual Info: HB56G19 S e rie s -1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The H B56G19 is a 1M x 9 dynamic R A M module, mount­ ed two 4 Mbit D R A M HM514400AS sealed in S O J package and 1 Mbit DRAM (HM511000AJP) sealed in S O J package.

56G1

Abstract: HB56G18B-8A HM514400
Contextual Info: HB56G18 Series 1,048,576-Word x B-Bit High Density Dynamic RAM Module • DESCRIPTION The H856G18 is a 1M x 8 dynamic RAM module, mount­ ed two 4 Mbit DRAM HM514400AS sealed in SOJ pack­ age. An outline of the HB56G18 is 30-pin single in-line pack­ age (socket type).

0934H

Contextual Info: HB56A240 Series-\ 2,097,152-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PINOUT The HB56A240B/SB is a 2M x 40 dynamic RAM module, mounted 20 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A240B/SB is a

M514400a

Abstract: M514400 L06lC ZP-20S
Contextual Info: blE H M D • 44TL5D3 GD22774 SOñ 5 1 4 4 0 0 A / A L / A S L S e r i e s — 1,048,576-word X4-bit Dynamic RAM HITACHI/ The Hitachi HM514400A/AL/ASL is a CMOS dynamic RAM organized 1,048,576-word x 4-bit. HM514400A/AL/ASL has realized higher density, higher perform ance and various functions by

DATA SHEET OF IC 317

Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Contextual Info: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,

HM514400

Contextual Info: blE ]> • 4 4 T b 20 3 □ D 2 3 b D 3 Eb4 ■ H I T S HB56D136 Series -HITACHI/ LOGIC/ARRAYS/MEM 1,048,576-Word x 36-Bit High Density Dynamic RAM Module T h e H B 5 6 D 1 3 6 is a 1M x 3 6 d y n a m ic R A M m o d u le , m o u n te d 8 p ie c e s o f 4 -M b it D R A M

CBV2

Abstract: 27x10
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC m em ory devices are classified as N M O S type, C M O S type, and B i-C M O S type. T here are advantages to it's circuit design, layout pattern, degree o f integration, and m anufacturing process. A ll H itachi m em ories are produced using standardized design, m anufacturing, and inspection techniques.

CBV2

Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Contextual Info: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

62256 hitachi

Abstract: 28 pin plastic dip hitachi dimension hitachi PLC
Contextual Info: Reliability of Hitachi 1C Memories 1. Structure The dies of IC memories are encapsulated in various packages. The most common packages are plastic and cerdip. Plastic packages are widely used in many different types of equipment. Cerdip packaging is especially suitable in equipment

HY514400-80

Abstract: hitachi 1k x 4 HM514402 HM514402A-7 20PIN HM514400JP-10 hitachi r 150 HM514410AL-7 Hitachi Scans-001
Contextual Info: - 233 4M CMOS w % tt £ CC TRAC max ns) A D y n a m i c &• > y n R A M (1 0 4 8 5 7 6 x 4 ) tt 2 0 P I N m 7, TRCY min (ns) TCAD min (ns) TAI-i min (ns) TP mi n (ns) TCCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C I DD (V) (mA) Â I DD STANDBY

CBV2

Abstract: HN27C301
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

77106

Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Contextual Info: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.

Contextual Info: blE D • 44^503 GD22774 SOfl fH IT S HM514400A/AL/ASL Series— 1,048,576-word X 4-bit Dynamic RAM H ITACHI/ The Hitachi HM 514400A/AL/ASL is a CMOS dynamic RAM organized 1,048,576-word x 4-bit. HM514400A/AL/ASL has realized higher density, higher perform ance and various functions by

Contextual Info: ^flB 56G 18 Series-1,048,576-Word x 8-Bit High Density Dynamic RAM Module • DESCRIPTION The H B56G 18 is a 1M x 8 dynam ic RAM m odule, m ount­ ed tw o 4 M bit DRAM H M 514400AS sealed in SOJ p ack­ age. An outline o f the H B56G 18 is 30-pin single in-line p ack­

514400

Abstract: hb56g19b
Contextual Info: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN O U T T h e H B 5 6 G 1 9 is a 1M x 9 dynam ic R A M m odule, m ount­ ed tw o 4 M bit D R A M H M 5 1 4 4 0 0 A S se a le d in S O J p a c ka g e and 1 M b it D R A M (H M 5 1 1 0 0 0 A JP ) s ealed in S O J package.