HN1V01H Search Results

isv149

Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV103 ISV255 1SS239 ISV229
Contextual Info: V a ria b le C a p a c ita n c e D iode F5 Type No. Package Type No. ISV101 - ISV102 - ISV103 Package - ISV225 MINI SUPER MINI ISV147 ISV228 ISV149 HN1V01H, HN1V02H, HN2V02H Package Type No. FM8 Type No. Package Type No. Vr Ct V (pF) Ct V r(V) (pF) Application

HN1V01H

Contextual Info: HN1V01H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V01H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including four devices in FM8 package (flat pack mini 8 pin)

Contextual Info: HN1V01H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V01H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. • High Q: Q = 200 (min) • Including four devices in FM8 package (flat pack mini 8 pin)

Contextual Info: HN1V01H TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS 0.3 4.5 - 0.2 “ “ High Capacitance Ratio : CIV /C8V= 19.5(Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)

HN1V01H

Contextual Info: HN1V01H TO SH IBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. “ “0.3 4.5 - 0.2 MAXIMUM RATINGS (Ta = 25°C (D1# D2, D3, D4) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range

HN1V01H

Contextual Info: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN 1V 01H Unit in mm AM RADIO BAND TUNING APPLICATIONS. + 0.3 4.5 - 0.2 High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q :Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)

Contextual Info: HN1V01H T O SH IB A TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. . • • • High Capacitance Ratio : C IV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)

Contextual Info: SILICON EPITAXIAL PLANAR TYPE TRANSISTOR HN1V01H A M R A D IO B A N D T U N IN G A PPLIC A TIO N S. U n i t in m m + 0 .3 4 5 -0 2 3 .] H i g h C a p a c it a n c e R a tio : C I V / C 8 V = 19.5 Typ. — E3 : Q = 200 (Min.) 1 — IMM OO + 1 • I n c lu d i n g F o u r Devices in F M 8 P a c k a g e ( F l a t P a c k M ini 8Pin)

HN1V01H

Contextual Info: HN1V01H TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type HN1V01H AM Radio Band Tuning Applications Unit: mm • High capacitance ratio: C1 V/C8 V = 19.5 typ. · High Q: Q = 200 (min) · Including four devices in FM8 package (flat pack mini 8 pin)

Contextual Info: TOSHIBA HN1V01H SILICON EPITAXIAL PLANAR TYPE HN1V 01 H Unit in mm A M RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio :CIV /C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devicesin FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation :

Contextual Info: TOSHIBA HN1V01H TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1VÌÌ1H A M RADIO BAND TUNING APPLICATIONS. U n it in mm • H igh C apacitance Ratio : C IV /C 8 V = 19.5 Typ. • H igh Q • In clu d in g F our Devices in FM 8 Package (F lat • Low V oltage O peration

38AN

Contextual Info: HN1V01H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin) Low Voltage Operation : V r = 1~8V

marking AJ

Abstract: marking AJ 7 1V01H
Contextual Info: SILICON EPITAXIAL PLANAR TYPE HN1V01H Unit in mm AM RADIO BAND TUNING APPLICATIONS . High Capacitance Ratio : C1V/C8V=19,5 Typ. . High Q : Q=200(Min.) . Including Four Devices in F118 Package (Flat Pack Mini 8 Pin) . Low Voltage Operation M A X I M U M RATINGS (Ta=25°C)

2N3904 331 transistor

Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
Contextual Info: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

3SK73

Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
Contextual Info: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2fu smd transistor

Abstract: 2FK transistor 3FV 60 43 smd diode Lz zener HN2S02JE CMZ24 CRS01 DF2S6.2S 1SV101 1SV283B
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 256 Zener Diodes z 257 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

3120 tuner

Abstract: C5086 1SS242 1SV226 1SV204 2sc low noise C1923 1SS241 mos cascode 2SA1161
Contextual Info: [I] PRODUCT OUTLINE & EXPLANATION 1. SELECTION GUIDE PACKAGE TYPES & APPLICATION 1.1 TRANSISTORS FOR TV TUNER Package Style TO -92 A PPLICATIO N ♦ Super-Mini Super-Mini Quad (SO T-23 M O D ./ (S O T -143 M O D .) T O -23 6 M O D . ) * * % % " • UHF M IX

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

FET K161

Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or

FET K161

Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
Contextual Info: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

2sc5088 horizontal transistors

Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
Contextual Info: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or