HVM10 Search Results

LT 5246

Abstract: HVM100 SC-59A hitachi product ordering
Contextual Info: HVM100 Silicon Epitaxial Planar Diode for AM tuner HITACHI ADE-208-470A Z Rev. 1 Sept. 1, 1998 Features • High capacitance ratio, (n =16.0 min) • High figure of merit. (Q =200 min) • To be usable at low voltage. • MPAK package is suitable for high density surface mounting and high speed assembly.

lola

Abstract: HVM12
Contextual Info: HIGH VOLTAGE ASSEMBLIED RECTIFIERS 0.35 AMPERE TO 0.75 AMPERE 5K VOLTS TO 16K VOLTS S\ ^ - - ^ P R V IV \ T Y P E N O ''''- '- 5KV 8KV 10KV 12KV 14KV 15KV 16KV CASE lolA) \ 0.35 HVM5 HVM8 HVM10 HVM12 HVM14 HVM15 HVM16 HVM 0.75 HVP5 HVP8 HVP10 HVP12 HVP14

Contextual Info: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 Features • • • • High capacitance ratio. (n = 16.0 min) High figure of merit. (Q = 200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HVM100 Silicon Epitaxial Planar Diode for AM tuner ADE-208-470A Z Rev. 1 Sept. 1, 1998 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltage. MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HITACHI HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-470 Z Rev 0 September 1996 Features • High capacitance ratio, (n = 16.0 min) • High figure o f merit. (Q = 200 min) • To be usable at low voltagee. • M PAK package is suitable for high density surface m ounting and high speed assembly.

HVM100

Abstract: SC-59A vr15a Hitachi DSA00302
Contextual Info: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 September 1996 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.

HVM16L

Abstract: HVM12
Contextual Info: HIGH VOLTAGE RECTIFIERS Io A PACKAGE \ 0.35 0.35 0.75 HVM-L HVM HVP —1.2 O U T L IN E V m m /T y p .) 18.5 V rrm \ (V o lts) J 1 a 4 40 H e 1 h 7 .0 \ 1 h - M . . HVM8L HVM8 HVP8 10000 HVM10L HVM 10 HVP10 12000 HVM12L HVM 12 HVP 12 14000 HVM14L HVM 14

Contextual Info: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible

Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1200HC-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200HC-90R ● IC ………………………

MT 2800 N

Abstract: D 1062 transistor CM800HG-90R
Contextual Info: Prepared by S. Iura Approved by H. Yamaguchi : Jul. 2010 MITSUBISHI HVIGBT MODULES Revision: 1.0 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HG-90R ● IC ………………………

D 1062 transistor

Abstract: HVM-1062
Contextual Info: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY

2x062h

Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1

CM400HG130H

Contextual Info: CONFIDENTIAL Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules COMPANY PROPRIETARY

CM1500HG-66R

Abstract: cm1500hG CM1500HG -66R
Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.1 Approved by H. Yamaguchi : Apr. 2009 CM1500HG-66R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1500HG-66R ● IC ………………………

L42n

Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
Contextual Info: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:

Contextual Info: R oH S C om plian t HIGH VOLTAGE RECTIFIERS PLASTIC MATERIAL HAS UL 94V-0 CLASSIFICATION o o OPERATING AND STORAGE TEMPERATURE -55 C to +150 C TYPE Maximum Peak Reverse Voltage PRV VPK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz Maximum

CM1000HC-66R

Abstract: 1061 transistor HVIGBT transistor h 1061
Contextual Info: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R       IC •······························································ 1000A

501c1

Contextual Info: ISDN SO DIL Interface Modules Features • excellent output characteristics ensures compliance with CCITT.I.430 pulse waveform template when used with recommended IC pairing • excellent and consistent balance between windings • operating temperature: 0 to 70°C

CM400HG-130H

Abstract: cm400hg-130 CM400HG130H cm400hg
Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 Revision: A CM400HG-130H rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-130H ●IC ……………………… 400 A

HVM12

Abstract: HVM15
Contextual Info: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any

CM750HG-130R

Contextual Info: < HVIGBT MODULES > CM750HG-130R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM750HG-130R z z z z z z IC•····························································

Contextual Info: < HVIGBT MODULES > CM1000HC-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1000HC-66R       IC •······························································ 1000A

Contextual Info: < HVIGBT MODULES > CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM1200HC-90R       IC •······························································· 1200A

HVM12 350

Abstract: HVM12 HVM10 diode HVM12 HVM15 HVM14 HVM16
Contextual Info: HVM5 RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION HVM16 HIGH VOLTAGE ASSEMBLIED RECTIFIER VOLTAGE RANGE 5000 to 16000 Volts CURRENT 0.35 Amperes FEATURES * * * * * * Low cost Low leakage Isolated case Surge overload rating - 50 amperes peak Mounting position: Any