HVM100 Search Results

LT 5246

Abstract: HVM100 SC-59A hitachi product ordering
Contextual Info: HVM100 Silicon Epitaxial Planar Diode for AM tuner HITACHI ADE-208-470A Z Rev. 1 Sept. 1, 1998 Features • High capacitance ratio, (n =16.0 min) • High figure of merit. (Q =200 min) • To be usable at low voltage. • MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 Features • • • • High capacitance ratio. (n = 16.0 min) High figure of merit. (Q = 200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.

Hitachi DSA001653

Contextual Info: HVM100 Silicon Epitaxial Planar Diode for AM tuner ADE-208-470A Z Rev. 1 Sept. 1, 1998 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltage. MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: HITACHI HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching HITACHI ADE-208-470 Z Rev 0 September 1996 Features • High capacitance ratio, (n = 16.0 min) • High figure o f merit. (Q = 200 min) • To be usable at low voltagee. • M PAK package is suitable for high density surface m ounting and high speed assembly.

HVM100

Abstract: SC-59A vr15a Hitachi DSA00302
Contextual Info: HVM100 Silicon Epitaxial Planar Diode for High Voltage Switching ADE-208-470 Z Rev 0 September 1996 Features • • • • High capacitance ratio. (n =16.0 min) High figure of merit. (Q =200 min) To be usable at low voltagee. MPAK package is suitable for high density surface mounting and high speed assembly.

Contextual Info: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible

L42n

Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
Contextual Info: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e | 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:

501c1

Contextual Info: ISDN SO DIL Interface Modules Features • excellent output characteristics ensures compliance with CCITT.I.430 pulse waveform template when used with recommended IC pairing • excellent and consistent balance between windings • operating temperature: 0 to 70°C

hvigbt

Abstract: hvigbt diode 150nH
Contextual Info: 1.2 VCC=850V, VGE=±15V RG=3.3Ω, Tj=125°C, LS=150nH Inductive load Integrated over range of 10% 1 SWITCHING ENERGY [J/P] 0.8 Eon 0.6 0.4 Eoff 0.2 Erec 400 800 1200 1600 COLLECTOR / EMITTER CURRENT [A] Half-bridge switching energy characteristics typical

CM800DZ-34H

Abstract: mitsubishi CM800DZ-34H
Contextual Info: MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZ-34H ● IC . 800A ● VCES . 1700V

DIODE marking Sl

Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
Contextual Info: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7

Contextual Info: ISDN SO DIL Interface Modules Features • excellent output characteristics ensures compliance with CCITT.I.430 pulse waveform template when used with recommended IC pairing • excellent and consistent balance between windings • operating temperature: 0 to 70°C

Contextual Info: The Talema Group nt magnetics nuvotem • Talema Group Overview and Capabilities • Toroidal Transformers • Power Chokes and Inductors • SMPS Transformers and Inductors • Current Sense Inductors and Transformers • Communications and Data Line Magnetics

IEC950

Abstract: IEC-950 A11018
Contextual Info: HVM Series - ISDN S Interface Modules Features • Fully certified to IEC950, supplementary level • Proven compatability with all common interface IC's • Excellent compliance with ITU-T I.430 pulse waveform requirements • Guaranteed reliability, parameters 100% auto-tested

hitachi mosfet power amplifier audio application

Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
Contextual Info: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners

hvm15 varicap

Abstract: hvc321b varicap diode tv tuner LT 5246 HUV131 diode lt 316 varicap diode HITACHI tuner C25 diode CVR 275 20
Contextual Info: Tune your Circuits Tuner Applications Varicap Diode Samples in this Kit: • • • • • • HVU 202B HVC 202B HVU 300B HVC 300B HVU 306B HVC 306B • • • • • • HVU 363B HVC 363B HVU 12 HVC 316 HNC 317B HVM 15 Hitachi’s range of Varicap and PIN Diodes

HVC358B

Abstract: HVC367
Contextual Info: DIODE llg^-IS JüS ÎP lÜ E ?^:# “i ^ — K Application Package code MPAK Tuning BS/CS Tuner URP UFP VCO UHF Tuning URP URP UFP URP VHF Tuning TV Tuner UFP AFC MPAK LLD URP UFP URP VCO UFP MPAK SÉRIES Variable capacitance diodes for electronic tuning

HVIGBT

Abstract: induction heating circuits circuit diagram of 1 phase bridge inverter HVIGBT from Mitsubishi electric CM1200HC-66H 3300V 1001 transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HC-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HC-66H ● IC . 1200A ● VCES . 3300V

1SS106

Abstract: 1SS119 1SS172 1SS108
Contextual Info: Type No. Page Package code Type No. P*9 Package ootte Type No. Page Package code 1S1146 6 DO-35 HRW0503A 1S2074® 6 DO-35 HRWO702A 1S2075® 6 DO-35 HRW0703A 7 MPAK HSU277 5 URP 1S2076 6 DO-35 HRW1002A 7 LDPAK © HVB14S 5 CM PAK 1S2076A 6 DO-35 HRW1002A ©

Contextual Info: IC - SO Interface Module Selection Guide Talema manufactures a wide range of signal transformers for all S O ISDN applications. Space saving modules, available in through hole and surface mount packages, offer a cost effective alternative to individual transformers