HY5116100 Search Results

HY5116100B

Contextual Info: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. HY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYM581600 M-Series •H Y U N D A I 16M X 8-bit CMOS ORAM MODULE DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22/xF decoupling capacitor Is mounted for

Contextual Info: HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22p.F decoupling capacitor is mounted for

HY5116100

Contextual Info: HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s SEMICONDUCTOR 16M X 1-blt CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: »fl Y U ND ft I - • HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM 5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 ¡iF and 0.01 (tF

Contextual Info: HYUNDAI H Y 5 1 1 6 1 0 0 A S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100Ais the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

hy5116100

Contextual Info: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide

ABO-20 L

Abstract: 1mx1 DRAM
Contextual Info: H Y 5 1 1 6 1 0 0 • H Y U N D A I S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. Ttie HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: HYM591600 M-Series •HYUNDAI 16M X 9 -b it CMOS DRAM MODULE DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.2?k F decoupling capacitor is mounted for

Contextual Info: HYM591600 Series ' H Y U N D A I SEMICONDUCTOR 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode C M O S DRAM module consisting of eight HY5116100 in 24/28 pin SO J or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for

HY5116100B

Abstract: 10k52 1AD41-00-MAY95 1AD41
Contextual Info: -HYUNDAI HY5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: •HYUNDAI SEMICONDUCTOR H Y 5 1 1 6 1 0 0 S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

HYM5321600AM

Abstract: HYM5321600ATM HYM5321600ATMG 16Mx32 HY5116100B
Contextual Info: HYM5321600A M-Series 16Mx32 bit FP DRAM MODULE based on 16Mx1 DRAM, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM5321600A M-Series is a 16Mx32-bit Fast Page mode CMOS DRAM module consisting of thirtytwo HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1µF and

Contextual Info: HY5116100B «HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M org a n iz e d 16 ,777 ,216 x 1-bit c o n fig u ra tio n w ith F a s t P age m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs high

Contextual Info: •HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s 16Mx1-btt C M O S D R A M DESCRIPTION "The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

ATMG

Abstract: HYM5361600A HYM5361600AM HYM5361600AMG HYM5361600ATM HYM5361600ATMG
Contextual Info: HYM5361600A M-Series 16Mx36 bit FP DRAM MODULE based on 16Mx1 DRAM, with Parity, 5V, 4K-Refresh GENERAL DESCRIPTION The HYM5361600A M-Series is a 16Mx36-bit Fast Page mode CMOS DRAM module consisting of thirty-six HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1µF and 0.01µF

Contextual Info: HYM5321600A M-Series -H Y U N D A I 16MX32 bit FP DRAM MODULE based on 16Mx1 DRAM, SV, 4K-Refresh GENERAL DESCRIPTION The HYM5321600A M-Series is a 16Mx32-bit Fast Page mode CMOS DRAM module consisting of thirtytwo HY5116100B in 24/26 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.1 uF and

Contextual Info: -HYUNDAI HY51161OOA Series 16M X 1-bit CMOS DRAM DESCRIPTION The HY5116100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide

Contextual Info: “HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1-bit CMOS DRAM DESCRIPTION The HY5116100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide

D-0300

Contextual Info: “H Y U N D A I SEMICONDUCTOR H Y M 591600 S e r ie s 16M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM591600 is a 16M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5116100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22\iF decoupling capacitor is mounted for

Contextual Info: HY5116100A "H YU N D A I 16M DESCRIPTION X 1-bit CMOS DRAM ORDERING INFORMATION T his fa m ily is a 16M bit dynam ic RAM organized 16,777,216 x 1-bit configuration w ith Fast Page m ode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells w ithin the

Contextual Info: H Y 5 1 1 6 1 O O A •HYUNDAI S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY51161 OOA is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51161 OOA utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: H Y 5 1 V 1 6 1 O O A “H Y U N D A I S e r ie s 16MX 1-bit CMOS DRAM PRELIMINARY DESCRIPTION TTie HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide