Y51161 Search Results

HY5116100B

Abstract: 10k52 1AD41-00-MAY95 1AD41
Contextual Info: -HYUNDAI Y5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide

5118164

Abstract: Hyundai 5118164 hy5116164csljc
Contextual Info: ’ « Y U H P W I * > H Y 5118164C,H Y5116164C 1Mx16, Extended Data Out mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

HY5116100B

Contextual Info: Y5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The Y5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. Y5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: HYUNDAI HYM564200 X-Series 2M X 64-bit CMOS ORAM MODULE D E S C R IP T IO N The HYM564200 is a 2M x 64-bit Fast page m ode CMOS DRAM m odule consisting o f eight Y5116160 in 42/42 pin SOJ, tw o 16-bit and one 8-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed circuit board.

rau2

Abstract: 1A011
Contextual Info: Y5116160 Series -HYUNDAI 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The Y5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The Y5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

hy5116100

Contextual Info: »HYUNDAI H Y 5 1 1 6 1 O O A S e r ie s 16M X 1 -bit CMOS DRAM DESCRIPTION The H Y 5 1 1 6 1 0 0 A isth e new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5116100A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide

ABO-20 L

Abstract: 1mx1 DRAM
Contextual Info: H Y 5 1 1 6 1 0 0 • H Y U N D A I S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The Y5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. Ttie Y5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: •HYUNDAI H Y 5 1 1 8 1 6 0 B ,H Y 5 1 1 6 1 6 0 B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

Contextual Info: H YU N D A I HY51V16100A Series 16M X 1-blt CMOS ORAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

HY5118160B

Contextual Info: . « y u n p i n " * HY5118160B.Y5116160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1 ,0 4 8,57 6 x 16-bit configuration with Fast P age mode C M O S DRA M s. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

Contextual Info: Y5116100B «HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M org a n iz e d 16 ,777 ,216 x 1-bit c o n fig u ra tio n w ith F a s t P age m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs high

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP

Contextual Info: •HYUNDAI H Y 5 1 1 6 1 0 0 S e r ie s 16Mx1-btt C M O S D R A M DESCRIPTION "The Y5116100 is the new generation and fast dynamic RAM organized 16,777,216x 1-bit. The Y5116100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: -HYUNDAI Y51161OOA Series 16M X 1-bit CMOS DRAM DESCRIPTION The Y5116100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The Y5116100A utilizes Hyundai's CM OS silicon gate process technology as advanced circuit techniques to provide wide

Hy5118164B

Abstract: hy51181648 HY5118164C HY5118164
Contextual Info: •HYUNDAI H Y 5 1 1 8 1 6 4 B .H Y 5 1 1 6 1 6 4 B 1Mx16, Extended Data Out mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode w hich is useful for the read operation. The circuit and process