Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,
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HY51V4403B
050f1
1AC1S-00-MAY94
HY51V4403BJ
HY51V4403BU
HYS1V4403BSU
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Untitled
Abstract: No abstract text available
Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,
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HY51V4403B
576x4-bit.
HY51V4403B
1AC16-10-MAY95
HY51V4403BJ
HY51V4403BLJ
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Untitled
Abstract: No abstract text available
Text: “HYUNDAI U HYM5V36223A X-S ries 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36223A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 42/50 pin TSOPII and two HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy
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HYM5V36223A
36-bit
HY51V18160B
HY51V4403B
22\iF
HYM5V36223ATX/ASLTX
HYM5V36223ATXG/ASLTXG
DQ0-DQ35)
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U2506
Abstract: No abstract text available
Text: “ H Y U N D A I H Y M 5 V 7 2 1 3 A N - S e r i e s 1 M x 72_bjt CM 0S DRAM MODULE DESCRIPTION The HYM5V72103A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of sixteen HY51V4400B in 20/26 pin SOJ or TSOP-II, two HY51V4403B in 24/26 pin SOJ or TSOP-II and two 16-bit BiCMOS line drivers in
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HYM5V72103A
72-bit
HY51V4400B
HY51V4403B
16-bit
HYM5V72103ANG/ATNG/ASLNG/ASLTNG
SL-part35)
1EC13-10-AUG95
HYM5V72103ANG
U2506
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HY51V4403B
Abstract: csi40
Text: HYUNDAI H Y 5 1 V 4 4 0 3 B S e r ie s 1M x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION Tine HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,
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HY51V4403B
0SCK127
1AC16-00-MAYM
HY51V4403BJ
HY51V4403BU
HY51V4403BSU
csi40
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UG-95
Abstract: No abstract text available
Text: “H Y U N D A I HYM5V36123A X-Sgnqs , U n U M I 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36123A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 42/42 pin SOJ or 44/50 pin TSOPII and one HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy
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HYM5V36123A
36-bit
HY51V18160B
HY51V4403B
22jiF
HYM5V36123ATX/ASLTX
HYM5V36123ATXG/ASLTXG
DQ0-DQ35)
UG-95
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4ca5
Abstract: 1WC3
Text: HYUNDAI HY51V4403B Series 1M X 4-bit CMOS DRAM with 4CÄ5 DESCRIPTION The HY51V4403B is the new generation and fast dynam ic RAM organized 1,048,576x4-bit. The HY51V4403B has four C A S s C A S 0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO.
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HY51V4403B
576x4-bit.
1AC16-10-MAY95
43YHNDAI
HY51V4403BJ
4ca5
1WC3
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BEDO RAM
Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE
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HY531000A.
HY534256A.
16-bit.
HY5216257.
x16-bit.
DB101-20-MAY95
BEDO RAM
hy5118160b
HY512264
HY5117404
HY5118164B
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HYM5V64414
Abstract: No abstract text available
Text: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR
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HYM5V64104AR/ATR
HYM5V64124AR/ATR
HYM5V72A124AR/ATR
HYM5V64204AR/ATR
HYM5V64214AF/ATF
HYM5V64224AR/ATR
I6164BJ/BT
HY51V18164BJ/BT
HY51V4404BJ/BT
HYM5V64414
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r4kf
Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Text: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S
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256Kx
64Kx4)
HY53C256S
HY53C256LS
HY53C256F
HY53C256LF
HY53C464S
HY53C464LS
HY53C464F
HY53C464LF
r4kf
fr4k
HY531000J
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AUO-PL321.60
Abstract: HY51V18164B HY514264 HY514260
Text: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP
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HY531000AS
HY531000ALS
HY531000AJ
HY531000ALJ
HY534256AS
HY534256ALS
HY534256AJ
HY534256ALJ
HY512260JC
HY512260LJC
AUO-PL321.60
HY51V18164B
HY514264
HY514260
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HY5118160
Abstract: 256K 4bit DRAM HY514260 HY51426 HY51V16100 HY531000 4K x 1 DRAM 256k 8bit 512k 4bit
Text: “HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS 2. PRODUCT QUICK REFERENCE GUIDE
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256K-bits
HY53C256.
HY53C464
HY531000.
DB101-20-MAY94
HY5118160
256K 4bit DRAM
HY514260
HY51426
HY51V16100
HY531000
4K x 1 DRAM
256k 8bit
512k 4bit
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d 100 d
Abstract: Y514100A HYM532220
Text: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"
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HYM5V64104AX/ATX
HYM5V64124AX/ATX
HYM5V64100AN/ATN
HYM5V64100AX/ATX
HYM5V64120AX/ATX
HYMSV72103AN/ATN
HYM5V72A100ATN
HYM5V72A120ATX
HY51V16164B
HY51V18164BJ/BT
d 100 d
Y514100A
HYM532220
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Untitled
Abstract: No abstract text available
Text: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16
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32814A
32810A
536A804AM
HYM536A814AM
36810A
HY5117404AJ/AT
HY5117400AJ/AT
HY5116404AJ
HY5117404AJ
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