HY51V18160B Search Results

HY51V16160BJC

Contextual Info: HY51V18160B,HY51V16160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

Contextual Info: HYUNDAI H Y M 5 V 7 2 A 1 2 0 A 1M X X - S e r ie s 72-bit CMOS DRAM MODULE DESCRIPTION The HYM5V72A120A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of two HY51V4400B in 20/26 pin SOJ or TSOP-II, four HY51V18160B 42/42 pin SOJ or 44/50 pin TSOP-li and two 16-bit BiCMOS line driver

Contextual Info: “HYUNDAI U HYM5V36223A X-S ries 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36223A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 42/50 pin TSOPII and two HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy

1OC05

Contextual Info: H Y U N D A I H Y M 5 V 3 2 1 2 0 A IM I 32-bit CMOS X -S e r íe s DRAM MODULE DESCRIPTION The HYM5V32120A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor

Contextual Info: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques

Contextual Info: - H Y U N D A I * HY51V18160B,HY51 V I6160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

UG-95

Contextual Info: “H Y U N D A I HYM5V36123A X-Sgnqs , U n U M I 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM5V36123A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY51V18160B in 42/42 pin SOJ or 44/50 pin TSOPII and one HY51V4403B in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy

Contextual Info: ••HYUNDAI HYM5V32220A X-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION Die HYM5V32220A is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 44/50 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board 0.22nF decoupling capacitor

Contextual Info: “ H Y U N D A I H Y M 5 V 6 4 2 2 0 A X - S e r ie s 2M x 64-bit CMOS DRAM MODULE DESCRIPTION The HYM5V64220A is a 2M x 64-bit Fast page mode CMOS DRAM module consisting of eight HY51V18160B in 42/42 pin SOJ, 44/50pin TSOP and two 16-bit BiCMOS line driver in TSSOP on a 168 pin giass-epoxy printed circuit

Contextual Info: HYUNDAI HYM5V64120A X-Series 2M X 64-bit CMOS DRAM MODULE DESCRIPTION Ttie HYM5V64120A is a 1M x 64-bit Fast page mode CMOS DRAM module consisting of four HY51V18160B in 42/42 pin SOJ or 44/50pin TSOP-II and two 16-bit BiCMOS line driver in TSSOP on a 168 pin glass-epoxy printed

Contextual Info: •HYUNDAI HY51V18160B,HY51 V 16160B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this

Contextual Info: •'HYUNDAI HY51V18160B, HY51V16160B _ 1M x 16bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells within the

Contextual Info: HYUNDAI HYM5V72A220A X-Series 1M X 7 2-b it CMOS DRAM MODULE DESCRIPTION The HYM5V72A220A is a 1M x 72-bit Fast page mode CMOS DRAM module consisting of four HY51V4400B in 20/26 pin TSOP-II, eight HY51V18160B 44/50pin TSOP-II and four 16-bit BiCMOS line driver in TSSOPon a 168 pin

tlo7

Abstract: IWR31
Contextual Info: HY51V18160B Series •HYUNDAI 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques

HYM5V64414

Contextual Info: As of ’96.3Q TYPE SIZE 8 -Byte 8M B DESCRIPTION. 1M x 64 EDO.SL D IM M PART HO. HYM5V64104AR/ATR SPEED REF. 60/70/80 4K H Y 51 V I6164BJ/BT x 4 IK HY51V18164BJ/BT x 4 IK HY51V18164BJ/BT x 4 HYM5V64124AR/ATR 1M x 72 Unbuffered EDO,SL,ECC HYM5V72A124AR/ATR

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP

HY5118164B

Abstract: hy5118160b HY5118160 HY51V65400TC HY5117804B
Contextual Info: DRAM PRODUCT 16Mbit As of '96.3Q DESCRIPTION PART NO. 4M x 4 EDO,2< Ref. 3.3V PACKAGE OPTION ACCESS TIME ns OPERATING CURRENT (mA.MAX) STANDBY CURRENT (mA,MAX) TTL CMOS AVAILABILITY HY51V17404A SO JJSO P I (300mil) 60/70/80 120/100/90 l 0.5 NOW HY51V17404B

HY51V18164

Abstract: HY5118164 HY514260 HY51V65400 HY51V17804CJ
Contextual Info: «HYUNDAI DRAM ORDERING INFORMATION ORGANIZATION 1M bit 256Kx4 2M bit (256x8) 2M bit (128Kx16) 4M bit (4Mx1) 4M bit (1 Mx4) Note : FP PART NUMBER HY534256AJ HY534256ALJ HY512800J HY512800LJ HY512800SLJ HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC

HY514260

Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Contextual Info: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .

d 100 d

Abstract: Y514100A HYM532220
Contextual Info: QUICK REFERENCE D R A M M O D U L E Q U IC K R E F E R E N C E 3.3V DIMM TYPE S IZ E 8-B yte 8MB D E S C R IP T IO N 1M X 64 P A R T NO. EDO, SL HYM5V64104AX/ATX FPM, SL HYM5V64100AN/ATN SPEED 60/70/80 1K HY51V18164BJ/BT X 4 D, 1.00" 1K HY51V4400BJ/BT D, 1.00"

Contextual Info: • H jjjH DRAM MODULE 5V SIMM TYPE SIZE 72 Pin 32MB As of '96.3Q DESCRIPTION. 8M X 32 SIM M 8M X 36 K PART NO. SPEED REF. DEVICE USED EDO.SL H Y M 532814A M /A T M 6 0 /7 0 /8 0 2K HY5117404AJ/AT x 16 FPM.SL H Y M 532810A M /A T M 5 0 /6 0 /7 0 2K HY5117400AJ/AT x 16