HY57V16801 Search Results

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

HY57V168010C

Abstract: HY57V168010CLTC-8 HY57V168010CLTC-10S
Contextual Info: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of

hy57v16801

Abstract: 1SD02
Contextual Info: »14«9Y II II n AI I u n u i l l HY57V16801 Series 2M X 8 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16801 is a very high speed 3 3 V olt synchronous dynamic RAM organized 2,097,152x8bits, and fabricated with the Hyundai CM OS process. This dual bank circuit consists of tw o memories, each 1,048,576

HY57V168010C

Abstract: hy57v168010 HY57V168010CTC-10 hy57v16801 HY57V168010CLTC-10S 1SD31-11-MAR98 hy57v168010cltc 1sd31
Contextual Info: HY57V168010C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010C is organized as 2banks of

HY57V168010D

Abstract: hy57v168010d-tc-10s HY57V168010DTC-10 HY57V168010DTC-10S hy57v168010 HY57V168
Contextual Info: HY57V168010D 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010D is organized as 2banks of

hy57v168010b

Abstract: hy57v168010 hy57v16801
Contextual Info: -H Y U N D A I - • H Y 5 7 V 1 6 8 0 1 0 B 2 Banks x IM X 8 Bit Synchronous ORAM DESCRIPTION The Hyundai HY57V168010B is a 16,777, 216-bits CMOS Synchronous DRAM, ideally suited tor the main memory applications which require large memory density and high bandwidth. HY57V168010B is organized as 2banks of

hy57v168010b

Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Contextual Info: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x

hy57v168010D

Abstract: IRRC
Contextual Info: -HYUNDAI - « H Y 5 7 V 1 6 8 0 1 0 D 2 Banks x 1 U X 8 Bit Synchronous DRAU DESCRIPTION Preliminary The Hyundai HY57V168010D is a 16, 7 7 7 ,216-bits CMOS Synchronous DRAM ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010D is organized as 2banks of

hy57v168010a

Abstract: hy57v168010 HY57V164010 hy57v168010altc HY57V161610 hy57v16801 hy57v161610a MDQ13 M1023 OV9653
Contextual Info: 16Mbit Synchronous DRAM Series 'HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs

HY57V168010D

Abstract: HY57V168010
Contextual Info: HY57V168010D 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V168010D is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V168010D is organized as 2banks of

Contextual Info: “H Y U N D A I TM I tf n U i t HY57V16801 Series 2M I X 8 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16801 is a very high speed 3.3 Volt synchronous dynamic RAM organized 2,097,152x8bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 1,048,576

hy57v168010

Abstract: HY57V164010 HYM7V64100T 1M - PCMCIA linear card 1M - FLASH PCMCIA linear card HY57V32 2M - FLASH PCMCIA linear card HY5117400ASLT
Contextual Info: Sync. DRAM MODULE As of '96.3Q TYPE SIZE SPEED REF. 168 Pin 8MB M X 64 Sync. HYM7V64100TR 10/12/15 4K HY57V161610 x4 DIMM 16MB 2M X64 Sync. HYM7V64200TR 10/12/15 4K HY57V161610X8 HYM7V64200TF 10/12/15 4K HY57V168010x8 DESCRIPTION. PART NO. Unbuffered 32MB

HY57V161610TC

Contextual Info: Synchronous DRAM PRODUCT 16Mbit 3.3V DESCRIPTION 4M x 4 As of '96.3Q part n o . CLOCK o p e r a t in g PACKAGE FREQUENCY CURRENT OPTION mA.MAX STAftIDBY CURFIfNT* (mA*lWAX) Préchargé Active HY57V164010TC TSOP- I 100/83/66 100/80/75 20 40 HY57V168010TC

hy57v168010a

Abstract: hy57v168010 HY57V164010 HY57V161610 400k5
Contextual Info: 16Mbit Synchronous DRAM Series -HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs

HYM7V65400

Contextual Info: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

HY57V164010

Contextual Info: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai HY57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010D is organized as 2banks of

HY57V164010C-10

Abstract: hy57v16 HY57V164010 HY57V168010 1SD30-11-MAR98 HY57V164010CLTC-10S
Contextual Info: HY57V164010C 2 Banks x 2M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V164010C is organized as 2banks of

hy57v168010c

Abstract: HYM7V65400CLTFG-10P HYM7V65400
Contextual Info: HYM7V65400C F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V65400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

KM48S8030BT-GL

Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

hy57v168010a

Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
Contextual Info: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.

HY57V168010C

Contextual Info: • HYM7V75A200C F-SERIES “H Y U M D U I Unbuffered 2Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM 7V75A200C is high speed 3.3Volt C M O S Synchronous D R A M module consisting of nine 2Mx8 bit Synchronous D R A M s in 44-pin T SO P II and one 8-pin T S S O P 2K bit E E P R O M on a 168-pin glass-epoxy

hy57v168010a

Abstract: HY57V164010 TSOPII HY57V16401OATC hy57v16801
Contextual Info: HYUNDAI PRODUCT REFERENCE SDRAM/SGRAM ORDERING INFORMATION 16M-bit SDRAM ORGANIZATION 4M x 4 2M x 8 IM x 16 PART NUMBER SPEED ns FEATURES PACKAGE HY57V16401OATC 10/12/15 2bank, 4K ref., LVTTL 400mil TSOP-II HY57V164010ALTC 10/12/15 2bank, 4K ref., LVTTL, L-part

KM416S4030BT-G10

Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.