Y57V Search Results

HY57V168

Abstract: hy57v168010 1sd31 66MHz
Contextual Info: - H Y U N D A I > -• H Y 5 7 V 1 6 8 0 1 0 C 2 Banks x 1M X 8 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 168010C is a 1 6 ,7 7 7 , 216-bits C M OS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. H Y 57V 168010C is organized as 2banks of

Contextual Info: ju v iiu n iB T II VI D A I 8Mx8 bit Synchronous DRAM Series Y57V648010/ Y57V648020/ Y57V658010/ HYS7V6S8020 _ Y57V648011/ Y57V648021/ Y57V658011/ Y57V658021 PRELIMINARY DESCRIPTION H Y 57V 648010 4Mbit X 2bank x 8 I/O, LVTTL H Y57V648020

Contextual Info: H Y57V281620A L T-I 8Mx 16-bit, 4K Ref, 4Banks., 3.3 V DESCRIPTION T h e Hy n i x H Y 5 7 V 2 8 1 6 2 0 A i s a 1 34, 2 1 7 , 7 2 8bi I C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t e d f o r t he Mobile applicati ons which require l ow p o w e r c o n s u m p t i o n and e x t e n d e d t e m p e r a t u r e r a n g e . H Y 5 7 V 2 8 1 6 2 0 A is o r g a n i z e d as 4 b a n k s of 2 , 0 9 7 , 1 5 2 x 1 6

HY57V16161ODTC-I

Abstract: 57v161610
Contextual Info: H Y57V16161ODTC-I 1Mx16-bit, 4K Ref., 2Banks, 3.3V DESCRIPTION T HE H y n i x H Y 5 7 V 1 6 1 6 1 0 D is a 1 6 , 7 7 7 , 2 1 6 - b i t s C M O S S y n c h r o n o u s D R A M , i d e a l l y s u i t ed f o r t he M o b i l e a p p l i c a t i o n s wh ic h r e qui r e low p owe r c o ns u m p t i on and indu st ri al t em p e r a t u r e range.

hy57v1298020tc10

Contextual Info: « « Y t l N O m - • HY 57V 1298020 4Banks x 4M x 8Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V1298020 is a 134, 2 17,728bit C M OS Synchronous DRAM , ideally suited for the m ain m em ory applications w hich require large m em ory density and high bandw idth. H Y 57V 1298020 is organized as 4banks of

Contextual Info: " H Y U N D A I • ^ HY 57V 1294020 4Banks x 8M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai H Y57V 1294020 is a 134. 217, 728bit C M O S Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth, H Y 57V 1294020 is organized as 4banks ot

X2M ST

Contextual Info: »«Y UND ft! - • H Y57V164010C 2 Banks x Z M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai Y57V164010C is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. Y57V164010C is organized as 2banks of

Contextual Info: »«YUWPA! > — - • Y57V658010 2 Banks x 4 M x 8 8 it Synchronous DRAM DESCRIPTION The Hyundai H Y57V 658010 is a 67,108, 864-bit C M O S Synchronous DRAM, ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. H Y 57V 658010 is organized as 2banks of

875mil

Abstract: HY57V651610TC10
Contextual Info: “HYUNDAI > -— .• H Y57V651610 2 Banks x 2M x 16 B it Synchronous ORAM DESCRIPTION The Hyundai Y57V651610 is a 6 7 ,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory appli­ cations which require large memory density and high bandwidth. Y57V651610 is organized as 2banks ot

HY57V161610B

Contextual Info: C » « Y U H D f t P - - - - - - - - - - • H Y 57V 161610B 2 Banks x S12K X 16 Bit Synchronous DRAM DESCRIPTION The Hyundai Y57V161610B is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. Y57V161610B is organized as 2banks of

Contextual Info: Y57V654020BTC , 16Mx4-bit, 4K Ref., 4Banks 3.3V DESORPTION The Hynix Y57V654020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. Y57V654020B is organized as 4banks of 4,194,304x4.

HY57V164010

Contextual Info: -H Y U N D A I - • H Y 57V 164010D 2 Banks X ZU X 4 Bit Synchronous DRAM DESCRIPTION Preliminary The Hyundai Y57V164010D is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. Y57V164010D is organized as 2banks of

HY57V6580208

Abstract: 21M22 HY57V6580208TC Y57V658020BTC-7I
Contextual Info: Y57V658020BTC-I 8Mx8-bit. 4K Ref., 4Banks, 3.3V D E S C R I PT I O N Th e H y n ix H Y 5 7 V 6 5 8 0 2 0 B is a 6 7 , 1 0 6 , 8 6 4 - b i t C M O S S y n c h r o n o u s D R A M , id e a l l y s u i te d f o r th e M o b i le a p p l i c a t i o n s w h ic h r e q u i r e lo w

57V651620B

Contextual Info: Y57V651620BTC 4Mx16-bit, 4K Ref., 4Banks. 3.3V D E S C R I PT I ON The Hynix H Y 5 7 V 6 4 162 0H G is a 67,1 0 8 ,8 64 -b it CMOS require large m e m o r y dens ity and high band wi dth . Synchronous DRAM, ideally suited for the main memory applications

Contextual Info: u v H u n i a 8Mx8 bit Synchronous DRAM Series m /3 Y U N U A I Y57V648010/ Y57V648020/ Y57V658010/ Y57V658020 Y57V648011/ Y57V648021/ Y57V6S8011/ Y57V658021 PRELIMINARY DESCRIPTION Y57V648010 description and pinout, offering fully synchronous operation. All address, data and control inputs are

hy57v168010a

Abstract: Y57V164010A hy57v161610a Y57V HY57V641620 HY57V641621
Contextual Info: «HYUNDAI 1. TABLE OF CONTENTS TABLE OF CONTENTS In d e x . 2. PRODUCT QUICK REFERENCE GUIDE SD R A M Part N u m b ering.

HY57V658020ATC-10

Abstract: HY57V658020A
Contextual Info: -M Y U N D H I - - • Y57V658020A 4 Banks x 2 M x 8BI1 Synchronous DRAM DESCRIPTION The Hyundai Y57V658020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited lor the main memory applications which require large memory density and high bandwidth. Y57V658020A Is organized as 4banks of

HY57V641620

Contextual Info: _ > 03 T I I N _ D A I 4Mx16 bit Synchronous DRAM Series Y57V641610/ Y57V641620/ Y57V651610/ Y57V651620 Y57V641611/ Y57V641621/ Y57V651611/ Y57V651621 PRELIMINARY DESCRIPTION Y57V641610 2Mbit X 2bank x 16 I/O, LVTTL Y57V641620 1Mbit x 4bank x 16 I/O, LVTTL

HY57V28820ALT-6

Contextual Info: Y57V28820A L T 16MxS-bit, 4K Ref, 4Banks„ 3.3V DESCRIPTION The Hynix Y57V28820A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applica­ tions which require large memory density and high bandwidth. Y57V28820A is organized as 4banks of 4,194,304x8.

HY57V1291620

Contextual Info: » « Y U N P f t l - • Y57V1291620 4Banks x 2M x 16Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V1291620 is a 134, 217 ,728bit C M O S Synchronous D RAM , ideally suited for the m ain m em ory a pplications w hich require large m em ory d en sity and high bandw idth. H Y 57V 1291620 is organized as 4banks of

Contextual Info: -H Y U N D A I - • H Y 57V 054O1OA 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010A is a 67,108,864-bit C M O S Synchronous D RA M , ideally suited for the main memory applications which require large memory density and high bandwidth. Y57V654010A is organized a s 2banks of

Contextual Info: - H Y U N D ft l - • Y57V654020A 4 Banks x 4 M x 4Bit Synchronous DRAM DESCRIPTION The Hyundai Y57V654020A is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. Y57V654020A is organized as 4banks of

Contextual Info: Y57V658020BTC 8Mx8-bit, 4K Ref., 4Banks, 3.3V DESCRIPTION The Hynix Y57V658020B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. Y57V658020B is organized as 4banks of 2,097,152x8.

HY57V168

Abstract: hy57v168010b hym7v64200 hy57v168010a HYM7V64400 HYM7V64400TFG PC100 HYM7V65400 HYM7V64200TFG pc66
Contextual Info: •HYUN DAI Sync. DRAM MODULE - 1 TYPE 168Pin DIMM SIZE 8MB DESCRIPTION 1M X 64 Sync. Unbuffered 16MB 2M X 64 Sync. X HYM7V64200BTRG HYM7V64200TFG HYM7V64200BTFG HYM7V65200CLTFG 72 Sync., ECC HYM7V72A2Q0TFG HYM7V72A200BTFG HYM7V75A2Ö0CLTFG 64 Sync. HYM7V64400TKG