IPD122N10N3 Search Results
IPD122N10N3 Price and Stock
Infineon Technologies AG IPD122N10N3GATMA1MOSFET N-CH 100V 59A TO252-3 |
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IPD122N10N3GATMA1 | Cut Tape | 29,863 | 1 |
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IPD122N10N3GATMA1 | Reel | 2,500 | 16 Weeks | 2,500 |
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IPD122N10N3GATMA1 | 34,578 |
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IPD122N10N3GATMA1 | 97,500 | 2,500 |
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IPD122N10N3GATMA1 | 10,000 | 16 Weeks | 2,500 |
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IPD122N10N3GATMA1 | Cut Tape | 15,275 | 1 |
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IPD122N10N3GATMA1 | 99 |
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IPD122N10N3GATMA1 | 4,138 | 1 |
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IPD122N10N3GATMA1 | Cut Tape | 1,976 | 0 Weeks, 1 Days | 1 |
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IPD122N10N3GATMA1 | 17 Weeks | 2,500 |
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IPD122N10N3GATMA1 | 23,801 |
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Infineon Technologies AG IPD122N10N3GBTMA1MOSFET N-CH 100V 59A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD122N10N3GBTMA1 | Digi-Reel | 1 |
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IPD122N10N3GBTMA1 | 100 | 1 |
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Infineon Technologies AG IPD122N10N3 G |
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IPD122N10N3 G | 712 |
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IPD122N10N3 Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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IPD122N10N3 G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 12.2 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 59.0 A; | Original | 250.85KB | 9 | |||
IPD122N10N3GATMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A | Original | 488.6KB | ||||
IPD122N10N3GBTMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 59A TO252-3 | Original | 483.77KB |
IPD122N10N3 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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marking EB5
Abstract: diode marking eb5 marking G9
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IPD122N10N3 7865AE5 marking EB5 diode marking eb5 marking G9 | |
122N10NContextual Info: IPD122N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 100 V RDS(on),max 12.2 mW ID 59 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant |
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IPD122N10N3 IEC61249-2-21 PG-TO252-3 122N10N 122N10N | |
122N10N
Abstract: IPD122N10N3 G JESD22
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IPD122N10N3 PG-TO252-3 122N10N 122N10N IPD122N10N3 G JESD22 | |
Contextual Info: IPD122N10N3 G TM 3 Power-Transistor Product Summary Features Q' 381>>5<>?B=1<<5F5< QH35<<5>D71D5381B75HR 9H"[Z#@B?4E3D & V 9H ( J R ,?>=1H )*&* Y I -1 6 Q.5BI<?G?> B5C9CD1>35R 9H"[Z# Q T?@5B1D9>7D5=@5B1DEB5 |
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IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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PX3544
Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
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lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J | |
TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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