IRF131 Search Results

IRF1310N

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 91504A IRF1310N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRf 48 MOSFET

Abstract: MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A IRF133
Contextual Info: - Standard Power M O SFET s File N u m b e r IRF130, IRF131, IRF132, IRF133 1566 Power M O S Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors

IRF130

Abstract: IRF132 IRF131 IRF133 TA17411 TB334 380uH
Contextual Info: IRF130, IRF131, IRF132, IRF133 S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: PD- 95409 IRF1312PbF IRF1312S IRF1312L HEXFET Power MOSFET Applications l l l l High frequency DC-DC converters Motor Control Uninterrutible Power Supplies TO-220 is available in PbF as a Lead-Free VDSS 80V Benefits Low Gate-to-Drain Charge to Reduce Switching Losses

1RF130

Abstract: IRFI30 IRf 48 MOSFET 1RF131 03gm IRF N-Channel Power MOSFETs IRF132 MOSFET 150 N IRF T39 diode IRF130
Contextual Info: •01 D eT J ^ Ö V S O A I 3875081 G E SOLID STATE Standard Power M OSFETs OOlflEbT T f " 01E 18269 D T " ‘3 ? ‘"/i _ IRF130, IRF131, IRF132, IRF133 File N u m b e r 1 566 Power MOS Field-Effect Transistors

irf130

Abstract: IRF133 IRF132 IRF131 IRF130 mosfet
Contextual Info: IRF130, IRF131, IRF132, IRF133 HARRIS S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

AN1001

Abstract: IRF1312 IRF1312L IRF1312S IRF530S IRL3103L
Contextual Info: PD- 95409A IRF1312PbF IRF1312SPbF IRF1312LPbF HEXFET Power MOSFET Applications l l l l High frequency DC-DC converters Motor Control Uninterrutible Power Supplies Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including

Contextual Info: PD - 95690 IRF1310NPbF • Lead-Free www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1310NPbF www.irf.com 5 IRF1310NPbF 6 www.irf.com IRF1310NPbF www.irf.com 7 IRF1310NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

irf7309

Abstract: IRF7507TR IRF7342 IRF7210 DO-30 IRLML2803TR IRF964
Contextual Info: International Rectifier MOSFETs and Rectifiers MOSFETs Continued HEXFETª Power MOSFETs Ñ D2PAK (cont.) N-Channel (continued) Mfr.Õs Type IRF3710S IRF1310NS IRF540NS IRF530NS IRF3415S IRF3515S IRF3315S IRFS31N20D IRF640NS IRF630NS IRF644S IRF740S IRF710S

AN-994

Abstract: IRF1310S SMD-220
Contextual Info: PD - 9.1221 IRF1310S HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature VDSS = 100V RDS on = 0.04Ω ID = 41A Description

BU 508 AF mosfet

Abstract: AN-994 IRF1310N IRF1310NS IRF530S 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1514A IRF1310NS PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Surface Mount l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 100V

IRF530

Abstract: irf531 VN1200A IRF130 IRF532 VN0801D 100VI vn1200d IRF131 IRF132
Contextual Info: • IRF133 ■ IRF131 s?UL IRF130 IRF530 ■ IRF531 ■ IRF132 C4 ■ IRF131 ■ s ■ UL ■ OC ■ ■ IRF130 « OC ■ IRF132 ■ IRF133 ■ IRF532 ■ IRF533 S Siliconix 100VMOSPOWER N-Channel Enhancement Mode CO IO These power FETs are designed especially for audio amplifiers,

IRF1310NL

Abstract: AN-994 IRF1310N IRF1310NS 4.5v to 100v input regulator
Contextual Info: PD - 91514B IRF1310NS/L HEXFET Power MOSFET l l l l l l Advanced Process Technology Surface Mount IRF1310NS Low-profile through-hole (IRF1310NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS =100V RDS(on) = 0.036Ω G ID = 42A

IRF130 mosfet

Abstract: irf133 83AD IRF133 international rectifier and/IRF133 irf132
Contextual Info: HE D I 40 5 5 4 5 2 OGOTOSG 1 | Data Sheet No. PD-9.303H INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER IO R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXFET TRANSISTORS IRF130 IRF131 IRF132

Contextual Info: PD - 91504A IRF1310N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRF530S

Abstract: IRL3103L
Contextual Info: PD- 95322 IRF1310NS/LPbF • Lead-Free www.irf.com 1 05/27/04 IRF1310NS/LPbF 2 www.irf.com IRF1310NS/LPbF www.irf.com 3 IRF1310NS/LPbF 4 www.irf.com IRF1310NS/LPbF www.irf.com 5 IRF1310NS/LPbF 6 www.irf.com IRF1310NS/LPbF www.irf.com 7 IRF1310NS/LPbF D2Pak Package Outline

F530S

Abstract: K02A IRF530S
Contextual Info: PD- 95322 IRF1310NS/LPbF • Lead-Free 1 IRF1310NS/LPbF 2 IRF1310NS/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE ASS EMBLY LINE "L" INTERNATIONAL RECT IFIER LOGO Note: "P" in as sembly line

Contextual Info: IRF131 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)14 I(DM) Max. (A) Pulsed I(D)9.9 @Temp (øC)100 IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79 Minimum Operating Temp (øC)-55õ

IRF130R

Abstract: IRF131R IRF132R IRF133R 2501A
Contextual Info: Rugged Power MOSFETs_ IRF130R, IRF131R, IRF132R, IRF133R File N u m b e r 1986 Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V N -C H A N N E L E N H A N C E M E N T M O D E ros on = 0.180 and 0.250 Features: • Single pulse avalanche energy rated

IRF1401

Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
Contextual Info: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204

Contextual Info: IRF1310NS/L l l l l l l Advanced Process Technology Surface Mount IRF1310NS Low-profile through-hole (IRF1310NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated TO-262 TO-263 Description The D2Pak is a surface mount power package capable of

IRF1310N

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 91504A IRF1310N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRF1310NPBF

Contextual Info: PD - 95690 IRF1310NPbF • Lead-Free www.irf.com 8/19/04 IRF1310NPbF 2 www.irf.com IRF1310NPbF www.irf.com 3 IRF1310NPbF 4 www.irf.com IRF1310NPbF www.irf.com 5 IRF1310NPbF 6 www.irf.com IRF1310NPbF www.irf.com 7 IRF1310NPbF TO-220AB Package Outline Dimensions are shown in millimeters inches