TA17411 Search Results

DM 321

Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
Contextual Info: 00-05-19 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-073-03 IRF530 MOSFET trans IRF530, RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate

transistor BUZ20

Abstract: buz20s TA17411 mos n fet e 75w BUZ20 TB334
Contextual Info: BUZ20 Semiconductor Data Sheet 12A, 100V, 0.200 Ohm, N-Channel Power MOSFET October 1998 File Number 2254.1 Features • 12A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.200Ω (BUZ20 field effect transistor designed for applications such as

Contextual Info: i H A R R IRFF130, IRFF131, IRFF132, IRFF133 i s s e - c o . o u c t o r 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF130

Abstract: IRF132 IRF131 IRF133 TA17411 TB334 380uH
Contextual Info: IRF130, IRF131, IRF132, IRF133 S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irf130

Abstract: IRF133 IRF132 IRF131 IRF130 mosfet
Contextual Info: IRF130, IRF131, IRF132, IRF133 HARRIS S E M I C O N D U C T O R 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Description Features • High Input Im pedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF530 mosfet

Abstract: TA17411 IRF530 TB334 irf530g
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530 Data Sheet February 2002 14A, 100V, 0.160 Ohm, N-Channel Power

IRFF130

Abstract: TA17411 TB334 AVALANCHE TRANSISTOR
Contextual Info: IRFF130 Data Sheet March 1999 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET 1564.3 Features • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

RF1S540

Abstract: RF1S540SM9A RF1S530SM OF IRF530 530uH
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IRF530, RF1S530SM Data Sheet May 2000 14A, 100V, 0.160 Ohm, N-Channel Power

IRF530

Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
Contextual Info: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

TA17411

Abstract: RF1S540SM9A RF1S530 IRF530 mosfet IRF530 RF1S530SM RF1S540SM TB334
Contextual Info: [ /Title IRF53 0, RF1S5 30SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB IGNS DES W E T OR N DUC ED F TE PRO D N MME BSTITU ECO Data

TA17411

Abstract: IRF130 TB334
Contextual Info: IRF130 Data Sheet March 1999 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET 1566.4 Features • 14A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

TA17411

Abstract: RF1S530 RF1S530SM RF1S530SM9A RF1S540SM TB334
Contextual Info: RF1S530SM TM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

TA17411

Abstract: IRFF130
Contextual Info: IRFF130 Data Sheet Title FF1 bt 0A, 0V, 80 m, March 1999 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

RF1S530SM

Abstract: TA17411 RF1S530 RF1S530SM9A RF1S540SM TB334
Contextual Info: RF1S530SM Data Sheet 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

IRFF130

Contextual Info: IRFF130, IRFF131, IRFF132, IRFF133 S E M I C O N D U C T O R 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: iH A R R is SEMIC0NDUCT0R IRF130, IRF131, IRF132, IRF133 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRFF130

Abstract: TA17411 TB334
Contextual Info: IRFF130 Data Sheet January 2002 8.0A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

TA17411

Contextual Info: IRF530, RF1S530SM S e m iconductor Data Sheet 14A, 100 V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a

RF1S540

Contextual Info: RF1S530SM Data Sheet [ /Title RF1S 530SM /Subject (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (14A, 100V, 0.160 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO263AB ) /Creator () February 2001 14A, 100V, 0.160 Ohm, N-Channel Power

transco

Abstract: IRFF131
Contextual Info: ih a r r is IRFF130, IRFF131, IRFF132, IRFF133 7.0A and 8.0A, 80V and 100V, 0.18 and 0.25 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 7.0A and 8.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate