IRF9Z34L
Abstract: IRF9Z34S
Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω
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IRF9Z34S/L
IRF9Z34S)
IRF9Z34L)
IRF9Z34L
IRF9Z34S
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IRF9Z34
Abstract: IRF9Z34L IRF9Z34S SiHF9Z34S SiHF9Z34S-E3
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration • Surface Mount (IRF9Z34S/SiHF9Z34S)
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
IRF9Z34S/SiHF9Z34S)
IRSiHF9Z34L/SiHF9Z34L)
O-262)
O-263)
18-Jul-08
IRF9Z34
IRF9Z34L
IRF9Z34S
SiHF9Z34S-E3
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9571
Abstract: AN609 IRF9Z34L IRF9Z34S SiHF9Z34S
Text: IRF9Z34S_RC, IRF9Z34L_RC, SiHF9Z34S_RC, SiHF9Z34L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRF9Z34S
IRF9Z34L
SiHF9Z34S
SiHF9Z34L
AN609,
30-Mar-10
9571
AN609
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IRF9Z34L
Abstract: IRF9Z34S SiHF9Z34S SiHF9Z34S-E3
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single Advanced Process Technology
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
18-Jul-08
IRF9Z34L
IRF9Z34S
SiHF9Z34S-E3
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IRF9Z
Abstract: irf9z34strrpbf
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z34S, SiHF9Z34S) • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
2002/95/EC
2011/65/EU
IRF9Z
irf9z34strrpbf
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SiHF9Z34S-E3
Abstract: IRF9Z34L IRF9Z34S SiHF9Z34S
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z34S, SiHF9Z34S) • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)
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PDF
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
2002/95/EC
11-Mar-11
SiHF9Z34S-E3
IRF9Z34L
IRF9Z34S
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Untitled
Abstract: No abstract text available
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z34S, SiHF9Z34S) • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)
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Original
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PDF
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
2002/95/EC
2002/95/EC.
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irf9z34 mosfet
Abstract: No abstract text available
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z34S, SiHF9Z34S) • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)
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PDF
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
2002/95/EC
11-Mar-11
irf9z34 mosfet
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IRF9Z34
Abstract: IRF9Z34L IRF9Z34S
Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω
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IRF9Z34S/L
IRF9Z34S)
IRF9Z34L)
12-Mar-07
IRF9Z34
IRF9Z34L
IRF9Z34S
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Untitled
Abstract: No abstract text available
Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω
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IRF9Z34S/L
IRF9Z34S)
IRF9Z34L)
08-Mar-07
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IRF9Z34S
Abstract: IRF9Z34L "thermal via" PCB D2PAK
Text: PD - 9.913A IRF9Z34S/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRF9Z34S l Low-profile through-hole (IRF9Z34L) l 175°C Operating Temperature l Fast Switching l P- Channel l Fully Avalanche Rated Description l D VDSS = -60V RDS(on) = 0.14Ω
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IRF9Z34S/L
IRF9Z34S)
IRF9Z34L)
IRF9Z34S
IRF9Z34L
"thermal via" PCB D2PAK
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IRL3103L
Abstract: 609 marking code
Text: PD- 95767 IRF9Z34SPbF IRF9Z34LPbF Lead-Free www.irf.com 1 06/07/05 IRF9Z34S/LPbF 2 www.irf.com IRF9Z34S/LPbF www.irf.com 3 IRF9Z34S/LPbF 4 www.irf.com IRF9Z34S/LPbF www.irf.com 5 IRF9Z34S/LPbF 6 www.irf.com IRF9Z34S/LPbF www.irf.com 7 IRF9Z34S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches
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IRF9Z34SPbF
IRF9Z34LPbF
IRF9Z34S/LPbF
F530S
IRL3103L
609 marking code
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Untitled
Abstract: No abstract text available
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRF9Z34S, SiHF9Z34S) • Low-Profile Through-Hole (IRF9Z34L, SiHF9Z34L)
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Original
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PDF
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
2002/95/EC
O-262)
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Untitled
Abstract: No abstract text available
Text: IRF9Z34S, SiHF9Z34S, IRF9Z34L, SiHF9Z34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Advanced Process Technology - 60 RDS(on) (Ω) VGS = - 10 V 0.14 Qg (Max.) (nC) 34 Qgs (nC) 9.9 Qgd (nC) 16 Configuration • Surface Mount (IRF9Z34S/SiHF9Z34S)
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Original
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PDF
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IRF9Z34S,
SiHF9Z34S
IRF9Z34L,
SiHF9Z34L
IRF9Z34S/SiHF9Z34S)
IRSiHF9Z34L/SiHF9Z34L)
O-262)
O-263)
12-Mar-07
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irf510 switch
Abstract: IRFBA40N60C 800v irf IRL2505 IRF634L IRF540NL IRF520N IRFU9024N IRFU3910 IRL3215
Text: International Rectifier The HEXFET Through Hole Navigator COLOR CODING: EXISTING Products NEW Products released to production in last 6-9 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt.
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O-262
O-220
IRL3302
IRL3202
IRL3102
IRL3402
IRL3502
Super220TM
O-247
irf510 switch
IRFBA40N60C
800v irf
IRL2505
IRF634L
IRF540NL
IRF520N
IRFU9024N
IRFU3910
IRL3215
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IRU1239SC
Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK
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100MT160PAPBF
100MT160PA
100MT160PBPBF
IRU1239SC
iru1239
Full-bridge IR2110
Class-D ir2010
PWM IR2112 IRF540
ir21065
full bridge ir2110
h-bridge irfz44n
IRVCM10A
600V 300A igbt dc to dc boost converter
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GS 069 LF
Abstract: No abstract text available
Text: PD-9.913A International 3BR Rectifier IRF9Z34S/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF9Z34S • Low-profile through-hole (IRF9Z34L) • 175°C Operating Temperature • Fast Switching • P- Channel • Fully Avalanche Rated
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OCR Scan
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PDF
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IRF9Z34S)
IRF9Z34L)
GS 069 LF
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