IRFY340C
Abstract: IRFY340CM MOSFETs. Rectifier
Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1290B IRFY340CM HEXFET POWER MOSFET N-CHANNEL Product Summary 400 Volt, 0.55Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1290B
IRFY340CM
IRFY340C
IRFY340CM
MOSFETs. Rectifier
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IRFY340
Abstract: IRFY340C IRFY340CM IRFY340M
Text: PD - 94189 POWER MOSFET THRU-HOLE TO-257AA IRFY340,IRFY340M 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY340 0.55 Ω 8.7A Glass IRFY340M 0.55 Ω 8.7A Glass HEXFET® MOSFET technology is the key to International
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O-257AA)
IRFY340
IRFY340M
IRFY340
IRFY340,
O-257AA
IRFY340C
IRFY340CM
IRFY340M
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IRFY340
Abstract: 87A DIODE
Text: IRFY340 MECHANICAL DATA N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 BVDSS ID RDS(on) 10.41 10.92 13.39 13.64 16.38 16.89 10.41 10.67 12.70 19.05 1 2 3 400V 8.7A 0.55Ω FEATURES • 0.89 1.14
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IRFY340
O-220
O-220M
O-257AB)
IRFY340
87A DIODE
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IRFY340
Abstract: SHD2264 SHD226404
Text: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. B Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 400 Volt, 0.55 Ohm, 6.9 A MOSFET • Low RDS on • Equivalent to IRFY340 Series • Add a C after SHD for ceramic eyelets
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SHD226404
SHD2264
IRFY340
SHD2264
SHD226404
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Untitled
Abstract: No abstract text available
Text: IRFY340 MECHANICAL DATA N–CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 BVDSS ID RDS(on) 10.41 10.92 13.39 13.64 16.38 16.89 10.41 10.67 12.70 19.05 1 2 3 400V 8.7A 0.55 FEATURES • 0.89 1.14 •
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IRFY340
O-220
O-220M
O-257AB)
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Untitled
Abstract: No abstract text available
Text: PD - 91290C POWER MOSFET THRU-HOLE TO-257AA IRFY340C,IRFY340CM 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY340C 0.55 Ω 8.7A Ceramic IRFY340CM 0.55 Ω 8.7A Ceramic HEXFET® MOSFET technology is the key to International
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91290C
O-257AA)
IRFY340C
IRFY340CM
IRFY340C
IRFY340C,
O-257AA
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IRFY340C
Abstract: No abstract text available
Text: IRFY340C Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 400V ID = 8.7A RDS(ON) = 0.55Ω Ω 1.0 (0.039)
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IRFY340C
O257AB
O257AB
O220M)
13-Sep-02
IRFY340C
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IRFY340C
Abstract: IRFY340CM
Text: PD - 91290C POWER MOSFET THRU-HOLE TO-257AA IRFY340C,IRFY340CM 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY340C 0.55 Ω 8.7A Ceramic IRFY340CM 0.55 Ω 8.7A Ceramic HEXFET® MOSFET technology is the key to International
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91290C
O-257AA)
IRFY340C
IRFY340CM
IRFY340C
IRFY340C,
O-257AA
IRFY340CM
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IRFY340C
Abstract: IRFY340CM
Text: Provisional Data Sheet No. PD 9.1290B IRFY340CM HEXFET POWER MOSFET N-CHANNEL Product Summary 400 Volt, 0.55Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
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1290B
IRFY340CM
IRFY340C
IRFY340CM
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irfy340
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. A Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.55 Ohm, 6.9 A MOSFET Low RDS on Equivalent to IRFY340 Series Add a C after SHD for ceramic eyelets
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SHD2264
SHD226404
IRFY340
O-257
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IRFY340
Abstract: No abstract text available
Text: IRFY340 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 1 2 3 400V 6.9A Ω 0.55Ω 12.70 19.05 FEATURES 0.89
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IRFY340
300ms,
IRFY340
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IRFY340
Abstract: SHD2264 SHD226404
Text: SENSITRON SEMICONDUCTOR SHD226404 TECHNICAL DATA DATA SHEET 213, REV. A Formerly Part Number SHD2264 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 400 Volt, 0.55 Ohm, 6.9 A MOSFET Low RDS on Equivalent to IRFY340 Series Add a C after SHD for ceramic eyelets
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SHD226404
SHD2264
IRFY340
250mA
SHD2264
SHD226404
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IRF460
Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,
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30am-5
44-0-1737-2com
DB8029C
IRF460
SMD TRANSISTOR MARKING k38
smd transistor k38
we 751002 s
SMD-6C
transistor smd k45
RAD-HARD igbt
IRF3504
afl2805s manufactured by international rectifier
550-065
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IRFM9034
Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number
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IRHE7110
IRHE7130
IRHE7230
IRHE8110
IRHE8130
IRHE8230
IRHE9130
IRHE9230
IRHG7110
IRHG6110
IRFM9034
irh7c50se
IRFM460
irhy
IRFE310
international rectifier p
JANSR2N7261
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SHD239608
Abstract: shd239606
Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM
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O-254,
O-257)
SHD226413
SHD226401
SHD226402
SHD226403
SHD226404
SHD226405
SHD226406
SHD226407
SHD239608
shd239606
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10RIA10
Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy
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DO-203AA
HFA40HF120
HFA40HF60
O-254AA
HFA35HB120
HFA35HB120C
HFA35HB60
HFA35HB60C
O-258AA
HFA45HC120C
10RIA10
HFA40HF120
irfm9034
10RIA100
10RIA120
10RIA20
10RIA40
10RIA60
JANSR2N7261
70HF
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IRHNA57064SCS
Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5
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94046B
IRHNJ597230
IRHNJ593230
O-254AA
22JGQ045SCV
22GQ100SCV
25GQ045SCS
IRHNA57064SCS
IRHNJ597230SCS
IRHNJ9130SCS
IRHG6110SCS
IRHY7434
IRHE57130SCS
8CLJQ045SCV
IRHNJ57034SCS
irfy9230
35CLQ045SCS
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Untitled
Abstract: No abstract text available
Text: mi =Vr= INI IRFY340 SEM E LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 .70 5 .00 10.41 1 0.67 0.70 0.90 3.56 Dia. 3.81 V DSS 400V 6.9A 0.55ft ID(cont) 1 2 ^DS(on) FEATURES • HERMETICALLY SEALED T 0-220 METAL
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IRFY340
O-220M
300ms,
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1290B International ICR Rectifier HEXFET PO W ER M O S FE T IRFY340CM N-CHANNEL Product Summary 400 Volt, 0.55Q HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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1290B
IRFY340CM
6C731
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Untitled
Abstract: No abstract text available
Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17
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IRFG110
2N7334
JANTX2N7334
JANTXV2N7334
IRFG5110*
N7335
JANTXV2N7335
IRFV064
IRFV360
IRFV460
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irfm9034
Abstract: No abstract text available
Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel
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IRFAF30
IRFAF40
IRFAF50
IRFAG30
IRFAG40
IRFAG50
IRF9130
JANTX2N6804
JANTXV2N6804
IRF9140
irfm9034
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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JANTX2N7334
Abstract: irfy430
Text: Government/ " Space Products ^ I,a“ 4“ D0lb171 b41 " INTERNATIONAL RECTIFIER H EXFET - INR other Products From IR bSE D High Reliability/Mil Qualified •d @ TC = 25°C ■d @ Tc = 100°C ■HhJC Max. W A (WW) 0.70 0.70 0.70 0.70 1.0 1.0 1.0 1.0 0.6
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irfg110
M0-036AB
2n7334
jantx2n7334
jantxv2n7334
irfg5110
irfg6110
2n7336
irfy430
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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