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    IRF9130 Search Results

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    IRF9130 Price and Stock

    International Rectifier IRF9130

    Trans MOSFET P-CH 100V 11A 3-Pin(2+Tab) TO-3 Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Arrow Electronics IRF9130 3,046 26 Weeks 1
    • 1 -
    • 10 $21.4935
    • 100 $20.079
    • 1000 $19.8605
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    Bristol Electronics IRF9130 35
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    Quest Components IRF9130 28
    • 1 $18
    • 10 $16
    • 100 $14.8
    • 1000 $14.8
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    IRF9130 13
    • 1 $18
    • 10 $16
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    IRF9130 1
    • 1 $22.0396
    • 10 $22.0396
    • 100 $22.0396
    • 1000 $22.0396
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    ComSIT USA IRF9130 9
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    ES Components IRF9130 79
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    Infineon Technologies AG IRF9130

    HEXFET STD TO-3, -100V, -11A, 0.300 ohm
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    Future Electronics IRF9130 Bulk 50
    • 1 $21.22
    • 10 $20.93
    • 100 $20.21
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    International Rectifier IRF9130CECC

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    Bristol Electronics IRF9130CECC 13
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    Rochester Electronics IRF9130CECC 3 1
    • 1 $3.33
    • 10 $3.33
    • 100 $3.13
    • 1000 $2.83
    • 10000 $2.83
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    Hitachi Ltd IRF9130

    POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 100V, 0.35OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-204AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF9130 12
    • 1 $18
    • 10 $16
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    ELMOS SEMICONDUCTOR AG IRF9130

    POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 100V, 0.35OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-204AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF9130 4
    • 1 $16
    • 10 $12
    • 100 $12
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    IRF9130 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF9130 Harris Semiconductor Power MOSFET Selection Guide Original PDF
    IRF9130 International Rectifier HEXFET Transistor Original PDF
    IRF9130 Intersil -12A, -100V, 0.30 ?, P-Channel Power MOSFET Original PDF
    IRF9130 Semelab P-Channel Power MOSFET Original PDF
    IRF9130 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF9130 International Rectifier TO-3 N-Channel Scan PDF
    IRF9130 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRF9130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9130 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF9130 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF9130 Unknown FET Data Book Scan PDF
    IRF9130 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF9130 Samsung Electronics P-CHANNEL POWER MOSFETS Scan PDF
    IRF9130 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRF9130SMD Semelab P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRF9130SMD05 Semelab P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRF9130SMD05N Semelab P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF

    IRF9130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF9130

    Abstract: IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804
    Text: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International


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    PDF 90549C IRF9130 JANTX2N6804 JANTXV2N6804 O-204AA/AE) MIL-PRF-19500/562] -100V parellelin252-7105 IRF9130 IRF9130 mosfet gate drive for mosfet irf9130 JANTX2N6804 JANTXV2N6804

    Untitled

    Abstract: No abstract text available
    Text: IRF9130SMD05N IRFN9130SMD05 MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )


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    PDF IRF9130SMD05N IRFN9130SMD05 -100V IRF9130SMD05 IRFN913" IRFN9130SMD05 IRFN9130SMD05-JQR-B O276AA) 860pF

    Untitled

    Abstract: No abstract text available
    Text: IRF9130SMD MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9


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    PDF IRF9130SMD -100V 00A/ms

    IRF9130SMD05

    Abstract: IRF9130SMD05N IRFN9130SMD05
    Text: IRF9130SMD05N IRFN9130SMD05 MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )


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    PDF IRF9130SMD05N IRFN9130SMD05 -100V 00A/ms IRF9130SMD05 IRF9130SMD05N IRFN9130SMD05

    IRF9130

    Abstract: IRF9130 mosfet 5676 gate drive for mosfet irf9130
    Text: IRF9130 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)


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    PDF IRF9130 300ms, IRF9130 IRF9130 mosfet 5676 gate drive for mosfet irf9130

    diode bs 9300

    Abstract: lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) IRFNJ9130 IRF9130SMD05DSG" IRF9130SMD05DSG O276AA) diode bs 9300 lvt 817 Automatic Railway Gate Control system, PD9002 U3158 jan,tx series semiconductors 2n2369 die smd code marking a3a SMD-05 smd diodes s4 1.5w

    IRF9130

    Abstract: IRF9130 mosfet
    Text: IRF9130 MECHANICAL DATA Dimensions in mm inches P–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 1 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655) VDSS ID(cont) RDS(on)


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    PDF IRF9130 00A/ms 300ms, IRF9130 IRF9130 mosfet

    Untitled

    Abstract: No abstract text available
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA)

    IRF9130SMD05

    Abstract: IRFNJ9130 SMD05
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) -100A/ IRF9130SMD05 IRFNJ9130 SMD05

    2N2369 equivalent

    Abstract: No abstract text available
    Text: IRFNJ9130 IRF9130SMD05 MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3 5.72 (.225) 0.76 (0.030) min. 1 2 VDSS ID(cont) RDS(on) 10.16 (0.400)


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    PDF IRFNJ9130 IRF9130SMD05 -100V SMD05 O-276AA) O276AA) 860pF IRF9130SMD05DGS 2N2369 equivalent

    irf9130

    Abstract: No abstract text available
    Text: PD - 90549C IRF9130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6804  HEXFET TRANSISTORS JANTXV2N6804 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/562] 100V, P-CHANNEL Product Summary Part Number IRF9130 BVDSS -100V RDS(on) 0.30 Ω ID -11A The HEXFETtechnology is the key to International


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    PDF 90549C IRF9130 JANTX2N6804 JANTXV2N6804 O-204AA/AE) MIL-PRF-19500/562] -100V irf9130

    SMD05

    Abstract: No abstract text available
    Text: IRF9130SMD05DSG MECHANICAL DATA Dimensions in mm inches 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 3.05 (0.120) 0.127 (0.005) 3 VDSS ID(cont) RDS(on) 10.16 (0.400) 5.72 (.225)


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    PDF IRF9130SMD05DSG -100V SMD05 -100A/s SMD05

    IRF9130

    Abstract: gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130
    Text: IRF9130 Data Sheet February 1999 -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


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    PDF IRF9130 -100V, -100V IRF9130 gate driver for mosfet irf9130 IRF9130 mosfet power mosfets to 204aa TC.. 12A MOSFET Drivers gate drive for mosfet irf9130

    50V 8A 1MHz DIODE

    Abstract: IRF9130SMD IRFN9130SMD
    Text: IRF9130SMD MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9


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    PDF IRF9130SMD -100V 00A/ms 50V 8A 1MHz DIODE IRF9130SMD IRFN9130SMD

    FT0045A

    Abstract: No abstract text available
    Text: SSDI is proud to introduce four new radiation tolerant MOSFET products. All of these new devices feature rugged trench technology, low ON-resistance, and SEU / SEGR resistance to LET 38. TX, TXV, and S-level screening is available and based on MIL-PRF-19500. Screening flows are available on request. For more information or to request


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    PDF MIL-PRF-19500. SFR9130S 100kRAD IRF9130 FT0042A SFF110P05J SFF110P05M SFF110P05S1 O-254 FT0045A

    Untitled

    Abstract: No abstract text available
    Text: Government and Space llltemationsl HEXFET Power MOSFETs liQ R lR e c t if ie r Hermetic Package P-Channel Part Number BVq s s V IRF9130 -100 RDS(on) (Ohms) 0.3 Id @ Tr = 25°C Id @ TC = 100°C RthJC Max. (K/W) c (*i (A) -11 -7.0 1.67 Outline (W) Number (1)


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    PDF IRF9130 2N6804 JANTX2N6804 JANTXV2N6804 IRF9140 IRF9230 2N6806 JANTX2N6806 JANTXV2N6806 IRF9240

    1RFP9240

    Abstract: irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX
    Text: '"7964142 S A M S U N G SEM_ICONDUCTO ,> ." IRF9130/9131/9132/9133 T " IRFP9130/9131 /9132/9133 IRF9530/9531Z9532/9533 <*I b 4 1 4 d UUU54Ü5 _ ' P-CHANNEL Preliminary Specifications DE 1 7 ^ 4 1 4 2 - 1 0 0 Volt, 0.30 Ohm SFET PRODUCT SUMMARY 0D05405 ? Part Number


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    PDF IRF9130/9131/9132/9133 IRFP9130/9131 IRF9530/9531Z9532/9533 UUU54DS 7Tti4145 IRF/IRFP9130, IRF9530 -100V IRF/IRFP9131, IRF9531 1RFP9240 irfp 9640 1RF9540 l 9143 1rfp9140 L 9141 1RF9240 IRF 409 IRFP9I40 IRF95XX

    Untitled

    Abstract: No abstract text available
    Text: IRF9130, IRF9131, IRF9132, IRF9133 -10A and -12A, -80V and -100V, 0.30 and 0.40 Ohm, P-Channel Power MOSFETs July 1998 Description Features -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRF9130, IRF9131, IRF9132, IRF9133 -100V, -100V

    IRF9130 mosfet

    Abstract: IRF9130 501 mosfet transistor IRF9132 gate driver for mosfet irf9130 IRF9131 IRF9133 92CS-43394
    Text: Rugged Power MOSFETs File N um ber 2220 IR F9130, IRF9131 IRF9132, IR F9133 Avalanche-Energy-Rated P-Channel Power MOSFETs - 1 0 A Td s a n d o n = - 1 2 A , 0 . 3 0 0 - 6 0 V a n d a n d TERMINAL DIAGRAM - 1 0 0 V 0 . 4 0 0 Features: • Single pulse avalanche energy rated


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    PDF IRF9130, IRF9131 IRF9132, IRF9133 -100V 92CS-43262 IRF9131, IRF9132 IRF9133 IRF9130 mosfet IRF9130 501 mosfet transistor gate driver for mosfet irf9130 IRF9131 92CS-43394

    IRF9120

    Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
    Text: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150


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    PDF 1RF842 O-220AB IRF843 T0-220AB IRF9130 IRF9223 1RF9230 IRF9231 IRF9232 1RF9233 IRF9120 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523

    IRF9530 Harris

    Abstract: No abstract text available
    Text: HARRIS £ * H A SEmCOND R R SECTOR 430 2 27 1 o a s i i a a 54T bflE D PCF12P10W PCF12P10D I S SEMI C ON DU C T O R P-Channel MOS Chip January 1993 Die Features • HAS Passivated • Contact Metallization - Gate and Source - Aluminum - Drain-Tri-Metal AI-TI-Ni)


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    PDF PCF12P10W PCF12P10D MII-Std-750, RFP12P10 IRF9530 IRF9130 2N6849 PCF12P10D 1-800-4-HARRIS IRF9530 Harris

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    PDF

    IRF9130 mosfet

    Abstract: IRF9130 SFF9130 TC-10
    Text: JB55555tll S U M PRELIMINARY SFF9130 - .•'U SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 -11 AMP •100 VOLTS 0.30 O P-CHANNEL


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    PDF 670-SSDI SFF9130 IRF9130 IRF9130 mosfet SFF9130 TC-10

    IRF9130 mosfet

    Abstract: IRF9130 SFF9230M SFF9230Z r535
    Text: fe r c iftll PHtL,MINABY SFF9230M SFF9230Z SOLID STATE DEVICES, INC //// 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 -6.5 AMP -200 VOLTS 0.80Q P-CHANNEL POWER MOSFET | Designer’s Data Sheet FEATURES: •


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    PDF SFF9230M SFF9230Z 670-SSDI IRF9130 O-254 O-254Z IRF9130 mosfet SFF9230M SFF9230Z r535