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    IRLI640G Search Results

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    IRLI640G Price and Stock

    Vishay Siliconix IRLI640GPBF

    MOSFET N-CH 200V 9.9A TO220-3
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    DigiKey IRLI640GPBF Tube 846 1
    • 1 $4.31
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    • 100 $4.31
    • 1000 $1.53526
    • 10000 $1.49875
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    Vishay Siliconix IRLI640G

    MOSFET N-CH 200V 9.9A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRLI640G Tube 1,000
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    • 1000 $3.5625
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    Vishay Intertechnologies IRLI640G

    LOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRLI640G)
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    Avnet Americas IRLI640G Reel 1,000
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    Vishay Intertechnologies IRLI640GPBF

    LOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRLI640GPBF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRLI640GPBF Reel 13 Weeks 1,000
    • 1 -
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    • 1000 $1.49875
    • 10000 $1.41059
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    Mouser Electronics IRLI640GPBF 1,513
    • 1 $2.51
    • 10 $1.61
    • 100 $1.5
    • 1000 $1.42
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    Verical IRLI640GPBF 246 4
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    • 100 $1.0968
    • 1000 $1.075
    • 10000 $1.0643
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    IRLI640GPBF 50 21
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    • 100 $1.5125
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    Arrow Electronics IRLI640GPBF 246 13 Weeks 1
    • 1 $1.1131
    • 10 $1.1131
    • 100 $1.0968
    • 1000 $1.075
    • 10000 $1.0643
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    TTI IRLI640GPBF Tube 3,750 50
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    • 100 $1.09
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    • 10000 $1.09
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    TME IRLI640GPBF 1,440 1
    • 1 $1.27
    • 10 $1
    • 100 $0.91
    • 1000 $0.84
    • 10000 $0.84
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    ComSIT USA IRLI640GPBF 19,000
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    Chip1Stop IRLI640GPBF Tube 50
    • 1 $1.22
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    EBV Elektronik IRLI640GPBF 14 Weeks 50
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    IRLI640G Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRLI640G International Rectifier HEXFET Power MOSFET, VDSS = 200V, RDS(on) = 0.18 ?, ID = 9.9A Original PDF
    IRLI640G International Rectifier HEXFET Power Mosfet Original PDF
    IRLI640G Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRLI640G Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9.9A TO220FP Original PDF
    IRLI640G International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic, 200V, 9.8A, Pkg Iso TO-220 Fullpak Scan PDF
    IRLI640G Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRLI640GPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRLI640GPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9.9A TO220FP Original PDF

    IRLI640G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD- 95654 IRLI640GPbF • Lead-Free Document Number: 91314 7/26/04 www.vishay.com 1 IRLI640GPbF Document Number: 91314 www.vishay.com 2 IRLI640GPbF Document Number: 91314 www.vishay.com 3 IRLI640GPbF Document Number: 91314 www.vishay.com 4 IRLI640GPbF Document Number: 91314


    Original     		PDF IRLI640GPbF 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V


    Original     		PDF IRLI640G, SiHLI640G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V


    Original     		PDF IRLI640G, SiHLI640G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRLI640G

    Abstract: SiHLI640G SiHLI640G-E3
    Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V


    Original     		PDF IRLI640G, SiHLI640G O-220 18-Jul-08 IRLI640G SiHLI640G-E3

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1237 IRLI640G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS ON Specified at VGS = 4V & 5V Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.18Ω ID = 9.9A


    Original     		PDF IRLI640G O-220 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRLI640G_RC, SiHLI640G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRLI640G SiHLI640G AN609, CONFIGUp-10 3123m 1402m 4920m 6834m

    IRLI640G

    Abstract: No abstract text available
    Text: PD - 9.1237 IRLI640G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS ON Specified at VGS = 4V & 5V Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.18Ω ID = 9.9A


    Original     		PDF IRLI640G O-220 12-Mar-07 IRLI640G

    IRLI640G

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1237 IRLI640G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS ON Specified at VGS = 4V & 5V Fast Switching Ease of paralleling


    Original     		PDF IRLI640G O-220 IRLI640G

    Untitled

    Abstract: No abstract text available
    Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V


    Original     		PDF IRLI640G, SiHLI640G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRLI640GPBF

    Abstract: No abstract text available
    Text: PD- 95654 IRLI640GPbF • Lead-Free Document Number: 91314 7/26/04 www.vishay.com 1 IRLI640GPbF Document Number: 91314 www.vishay.com 2 IRLI640GPbF Document Number: 91314 www.vishay.com 3 IRLI640GPbF Document Number: 91314 www.vishay.com 4 IRLI640GPbF Document Number: 91314


    Original     		PDF IRLI640GPbF 12-Mar-07 IRLI640GPBF

    IRLI640GPBF

    Abstract: No abstract text available
    Text: PD- 95654 IRLI640GPbF • Lead-Free www.irf.com 1 7/26/04 IRLI640GPbF 2 www.irf.com IRLI640GPbF www.irf.com 3 IRLI640GPbF 4 www.irf.com IRLI640GPbF www.irf.com 5 IRLI640GPbF 6 www.irf.com IRLI640GPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original     		PDF IRLI640GPbF O-220 I840G IRLI640GPBF

    IRLI640G

    Abstract: No abstract text available
    Text: PD - 9.1237 IRLI640G HEXFET Power MOSFET Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. 4.8mm Logic-Level Gate Drive RDS ON Specified at VGS = 4V & 5V Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.18Ω ID = 9.9A


    Original     		PDF IRLI640G O-220 IRLI640G

    IRLI640G

    Abstract: part marking ab SiHLI640G SiHLI640G-E3
    Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V


    Original     		PDF IRLI640G, SiHLI640G O-220 18-Jul-08 IRLI640G part marking ab SiHLI640G-E3

    Untitled

    Abstract: No abstract text available
    Text: IRLI640G, SiHLI640G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Dist. 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4V and 5 V


    Original     		PDF IRLI640G, SiHLI640G O-220 12-Mar-07

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


    Original     		PDF O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    IRFZ44G

    Abstract: IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N
    Text: Quarterly Reliability Report for HEXFET Assembly IRGB Number 8 January 1999 Prepared by QA Services Page 1 of 60 Contents Prepared by QA Services 1 Introduction 2 Reliability Information 3 Environmental Test Results 4 Environmental Test Conditions/Schematics


    Original     		PDF IRFIZ34N IRFIZ44N IRFIZ48N IRFI1010N IRFI520N IRFI530N IRFI1310N IRLI3705N IRLIZ24N IRLIZ44N IRFZ44G IRF840G IRFZ34G IRFBC30G IRF9540G IRF640G IRFBC40G IRFP140 equivalent transistor 9721 transistor IRFP140N

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620