IS61LV2568 Search Results

Contextual Info: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION AUGUST 2002 FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 25mA (typ.)

IS61LV2568

Abstract: IS61LV2568-10K IS61LV2568-10KI IS61LV2568-10T IS61LV2568-10TI IS61LV2568-12K IS61LV2568-12KI IS61LV2568-12T
Contextual Info: ISSI IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 10 and 12 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

IS61LV2568

Abstract: IS61LV2568-10K IS61LV2568-10T IS61LV2568-12K IS61LV2568-12T IS61LV2568-8K IS61LV2568-8T
Contextual Info: ISSI IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 12 and 15 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

Contextual Info: ISSI IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • NOVEMBER 2004 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)

Contextual Info: IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • • APRIL 2008 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)

IS61LV2568L

Abstract: IS61LV2568L-8B IS61LV2568L-8K IS61LV2568LL S61LV256
Contextual Info: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 30mA (typ.) • Standby Current: IS61LV2568L: 700µA (typ.)

IS61LV2568L

Abstract: IS61LV2568L-10BI IS61LV2568L-8KI IS61LV2568L-8TI IS61LV2568LL
Contextual Info: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION JUNE 2002 FEATURES FEATURES Continued • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 60mA (typ.) IS61LV2568LL: 25mA (typ.)

Contextual Info: IS61LV2568L IS61LV2568LL ISSI 256K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION SEPTEMBER 2002 FEATURES • High-speed access time: IS61LV2568L: 8, 10 ns IS61LV2568LL: 12, 15 ns • Operating Current: IS61LV2568L: 50mA typ. IS61LV2568LL: 25mA (typ.)

IS61LV2568L

Abstract: IS61LV2568L-10KI IS61LV2568L-10KLI IS61LV2568L-10T IS61LV2568L-10TL IS61LV2568L-8K IS61LV2568L-8T
Contextual Info: ISSI IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • • JULY 2005 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)

IS61LV2568

Abstract: IS61LV2568-10K IS61LV2568-10T IS61LV2568-12K IS61LV2568-12T IS61LV2568-15K IS61LV2568-8K IS61LV2568-8T
Contextual Info: ISSI IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: 8, 10, 12 and 15 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

Contextual Info: ISST IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM a d v a n c e in fo rm a tio n FEATURES DESCRIPTION • High-speed access times: 8, 10,12 and 15 ns The IS S IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568

Contextual Info: IS61LV2568 256K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access times: — 8, 10, 12 and 15 ns • High-preformance, lower-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE

IS61LV2568L

Abstract: 61LV2568L IS61LV2568L-10KI IS61LV2568L-10T IS61LV2568L-10TL IS61LV2568L-8K IS61LV2568L-8T IS61LV2568L-8TL is61lv2568l10tl
Contextual Info: IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, FEATURES • • • • • • • • • • APRIL 2008 High-speed access time: 8, 10 ns Operating Current: 50mA typ. Standby Current: 700µA (typ.)

is25c64B

Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are

Contextual Info: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM April 2004 FEATURES • High-speed access times: - 8, 10, 12, 15 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

is62c51216al

Abstract: IS43LR16320B IS66WVE4M16BLL is66wve2m16 IS43DR16640A BGA60 IS66WVE4M16ALL TSOP2-44 IS42SM16400G is45vs16160d
Contextual Info: To our valued customers, At ISSI we design, develop and market high performance integrated circuits for the following key markets: i automotive electronics (ii) networking/telecommunications infrastructure, (iii) industrial/military/medical electronics (iv) mobile communications and digital

IS61LV256

Abstract: IS61LV256-10J IS61LV256-10T IS61LV256-12J IS61LV256-12T IS61LV256-8J IS61LV256-8T IS61LV256-12TLI IS61LV256-15JL is61lv25615jl
Contextual Info: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM June 2005 FEATURES • High-speed access times: - 8, 10, 12, 15 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels

Automotive Product Selector Guide

Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Contextual Info: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from

IS61LF51232-8

Abstract: IS61LV25616AL-8TL IS61LF51232 IS61LV5128L-10T GS71116AU-10E 167ML IS61NLP25636A-200TQL IS61QDB22M36 IS61LPS51236-150B IS61LV5128L-12T
Contextual Info: ISSI * - Tie down extra four I/Os with resistor + - Tie down extra two I/Os with resistor # - Connect pin 14 FT pin to Vss IS61DDB22M36-167M3 IS61DDB22M36-167M3L IS61DDB22M36-167ML IS61DDB22M36-200M IS61DDB22M36-200M3 IS61DDB22M36-200M3L IS61DDB22M36-200ML

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

IS61SP25636

Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Contextual Info: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B

Contextual Info: IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM FEATURES • High-speed access times: - 8, 10, 12, 15, 20 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby • TTL compatible interface levels

Contextual Info: ISSI IS61LV256 32K x 8 LOW VOLTAGE CMOS STATIC RAM MAY 1999 FEATURES • High-speed access times: - 8, 10, 12, 15, 20 ns • Automatic power-down when chip is deselected • CMOS low power operation - 345 mW max. operating - 7 mW (max.) CMOS standby