IXFH16N120P Search Results

IXFH16N120P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH16N120P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 16A TO-247	Original	PDF		5

IXFH16N120P Price and Stock

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Littelfuse Inc IXFH16N120P MOSFET N-CH 1200V 16A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH16N120P	Tube			1	1 $21.05 10 $21.05 100 $13.29 1000 $12.06 10000 $12.06	Buy Now
Newark	IXFH16N120P	Bulk			1	1 $20.63 10 $16.82 100 $13.02 1000 $11.82 10000 $11.82	Buy Now
RS	IXFH16N120P	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $18.69 10000 $18.11	Get Quote
IXYS Corporation IXFH16N120P MOSFETs 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH16N120P					1 $21.05 10 $21.05 100 $14.75 1000 $14.75 10000 $14.75	Get Quote
TTI	IXFH16N120P	Tube			300	1 - 10 - 100 - 1000 $16.08 10000 $16.08	Buy Now
TME	IXFH16N120P				1	1 $18.06 10 $14.36 100 $13.44 1000 $13.44 10000 $13.44	Get Quote
Chip 1 Exchange	IXFH16N120P		2,089			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IXFH16N120P		1,154		1	1 - 10 - 100 $30.69 1000 $30.69 10000 $28.33	Buy Now
IXYS Integrated Circuits Division IXFH16N120P MOSFET N-CH 1200V 16A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	IXFH16N120P		5,100			1 - 10 $15.84 100 $12.87 1000 $12.87 10000 $12.87	Buy Now

IXFH16N120P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH16N120P IXFT16N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings	Original	IXFH16N120P IXFT16N120P 300ns O-247 25VDS 16N120P	PDF
IXFH16N120P Contextual Info: IXFT16N120P IXFH16N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFT16N120P IXFH16N120P 300ns O-268 O-247 16N120P 09-12-12-B IXFH16N120P	PDF
IXFH16N120 Abstract: ixfh16n120p 16N120P 1200v to247 MOSFET Contextual Info: IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120 ixfh16n120p 1200v to247 MOSFET	PDF
IXFH16N120 Contextual Info: VDSS ID25 IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF