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    IXFT16N120P Search Results

    IXFT16N120P Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFT16N120P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 16A TO268 Original PDF 5
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    IXFT16N120P Price and Stock

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    Littelfuse Inc IXFT16N120P

    MOSFET N-CH 1200V 16A TO268
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    DigiKey IXFT16N120P Tube 289 1
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    Littelfuse Inc IXFT16N120P-TRL

    MOSFET N-CH 1200V 16A TO268
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    DigiKey IXFT16N120P-TRL Reel 400
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    IXYS Corporation IXFT16N120P

    MOSFETs 16 Amps 1200V 1 Rds
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    Mouser Electronics IXFT16N120P 358
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    TME IXFT16N120P 1
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    IXYS Corporation IXFT16N120P-TRL

    MOSFETs MOSFET Discretes
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    Mouser Electronics IXFT16N120P-TRL
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    IXYS Integrated Circuits Division IXFT16N120P

    MOSFET N-CH 1200V 16A TO268 / Polar Power MOSFET HiPerFET
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    Win Source Electronics IXFT16N120P 4,600
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    IXFT16N120P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH16N120P IXFT16N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings


    Original     		IXFH16N120P IXFT16N120P 300ns O-247 25VDS 16N120P PDF

    IXFH16N120P

    Contextual Info: IXFT16N120P IXFH16N120P PolarTM HiPerFETTM Power MOSFETs VDSS ID25 = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFT16N120P IXFH16N120P 300ns O-268 O-247 16N120P 09-12-12-B IXFH16N120P PDF

    IXFH16N120

    Abstract: ixfh16n120p 16N120P 1200v to247 MOSFET
    Contextual Info: IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120 ixfh16n120p 1200v to247 MOSFET PDF

    IXFH16N120

    Contextual Info: VDSS ID25 IXFH16N120P IXFT16N120P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 1200V = 16A ≤ 950mΩ Ω ≤ 300ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXFH16N120P IXFT16N120P 300ns O-247 16N120P 4-03-08-A IXFH16N120 PDF