Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXSH25N120A Search Results

    SF Impression Pixel

    IXSH25N120A Price and Stock

    IXYS Corporation IXSH25N120A

    IGBT 1200V 50A 200W TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH25N120A Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    IXYS Corporation IXSH25N120AU1

    IGBT 1200V 50A 200W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXSH25N120AU1 Tube
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now
    Quest Components IXSH25N120AU1 92
    • 1 $15
    • 10 $15
    • 100 $6
    • 1000 $6
    • 10000 $6
    Buy Now

    IXYS Integrated Circuits Division IXSH25N120AU1

    IGBT DIS.DIODE SINGLE 25A 1200V S SERIES TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXSH25N120AU1 9
    • 1 $20.92117
    • 10 $20.92117
    • 100 $19.5525
    • 1000 $19.5525
    • 10000 $19.5525
    Buy Now

    IXSH25N120A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXSH25N120A IXYS 1200V IGBT Original PDF
    IXSH25N120AU1 IXYS 1200V fast recovery epitaxial diode (FRED) Original PDF

    IXSH25N120A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    25N120

    Abstract: No abstract text available
    Text: IGBT IXSH25N120A IC25 = 50 A VCES = 1200 V VCE sat = 4.0 V Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original
    PDF IXSH25N120A O-247AD 25N120

    Untitled

    Abstract: No abstract text available
    Text: IXSH25N120AU1 IGBT with Diode "S" Series - Improved SCSOA Capability C IC25 = 50 A VCES = 1200 V VCE sat = 4.0 V G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES 1200 1200 V V Continuous ±20


    Original
    PDF IXSH25N120AU1

    IXSH25N120AU1

    Abstract: No abstract text available
    Text: IXSH25N120AU1 IGBT with Diode "S" Series - Improved SCSOA Capability C IC25 = 50 A VCES = 1200 V VCE sat = 4.0 V G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW VGES 1200 1200 V V Continuous ±20


    Original
    PDF IXSH25N120AU1 O-247 IXSH25N120AU1

    IXSH25N120A

    Abstract: 25N120A
    Text: IGBT IXSH25N120A IC25 = 50 A VCES = 1200 V VCE sat = 4.0 V Improved SCSOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original
    PDF IXSH25N120A O-247AD 25N120A

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original
    PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    40n60 igbt

    Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
    Text: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263


    Original
    PDF O-220 O-263 O-247 16N60 B1-10 24N60 30N60 40N60 40n60 igbt 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60

    SGH80N60RUFD

    Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
    Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)


    Original
    PDF SGR2N60UFD SGP10N60RUF SGP10N60RUFD SGH10N60RUFD SGW10N60RUFD SGP06N60 SKB10N60 BUP400D SGB15N60 SGH80N60RUFD bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Preliminary D ata S heet IXSH25N120A IGBT ^C25 VCES Improved SCSOA Capability Symbol V CE sat Test Conditions Maximum Ratings TO-247AD v CES Ta = 25°C to 150°C 1200 V v CGR Tj 1200 V = 25°C to 150°C; RGE= 1 MCI v GES Continuous ±20 V v GEM Transient


    OCR Scan
    PDF IXSH25N120A O-247AD G00375S

    T0263

    Abstract: T0-263 IXSH25N120A IXSH30N60C IXSH15N120B
    Text: Insulated Gate Bipolar Transistors IGBT S series with SCSOA capability v’ ces mln V *C(25» A V WCE(SAT) max V % typ ns T0-220 (P) PLUS247 (X) TO-268(T) T0263(A) TO-247(H) T0-204<M) IS0PLUS247T*I(R) SOT-227B(N) ♦ 4k ► Ne N TO-264<K) 4* LOW SATURATION VOLTAGE TYPES


    OCR Scan
    PDF T0-220 PLUS247TM O-268 IS0PLUS247T OT-227B T0263 O-247 IXSA16N60 IXSP16N60 IXSH24N60 T0-263 IXSH25N120A IXSH30N60C IXSH15N120B

    T0247AC

    Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m


    OCR Scan
    PDF B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212

    IGBT 200A 1200V

    Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D


    OCR Scan
    PDF bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40

    25N120AU1

    Abstract: No abstract text available
    Text: n ix Y S IGBT with Diode IXSH 25N120AU1 •C25 V CES SCSOA Capability CE sat Symbol Test Conditions VcHS T j = 25°C to 150°C 1200 V VC0R T j = 25°C to 150°C; RGE= 1 M il 1200 V v v GEM Continuous Transient U25 ' cm T c = 25°C T c = 90°C T 0 = 25°C, 1 ms


    OCR Scan
    PDF 25N120AU1 O-247AD IXSH25N120AU1 25N120AU1

    10A600V

    Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
    Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU


    OCR Scan
    PDF HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V

    Untitled

    Abstract: No abstract text available
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 C u n o B b ie T p a H 3 M C T o p b i IG B T IX Y S C #epa npMMeHeHMa: b n po M biw ne rn-ib ix ycTaHOBKax M a n o fi m cpeflHeM m o w ,h o c tm , b npMBOAHbix CMCTeMax, b yd p o M C T B a x ynpaB ^eH M a, b 6 ecn p0B 0A H bix 6 no K ax riMTaHMA Arm


    OCR Scan
    PDF 3S88SSS588S8888gÂ