Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTM21N60 Search Results

    IXTM21N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    IXTM21N60
    		IXYS MegaMOS Power MOSFETs Scan PDF 716.65KB 8

    IXTM21N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    21N60

    Abstract: a 1712 mosfet s300h 21N55 247 AA
    Contextual Info: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous


    OCR Scan     		00D0342 IXTH21N60, IXTM21N60, IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 O-204 O-247 21N60 a 1712 mosfet s300h 21N55 247 AA PDF

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan     		O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 PDF