JUL12 Search Results

2A1110

Contextual Info: A B C D E G F H REVISIONS 5.50 [.217] DEEP THREADED HOLES, SEE ORDERING CODE THREAD OPTION 1 TOP PORT POSITION #1 REV DESCRIPTION, ECN, EAR NO. DATE D PRODUCT DRAWING EAR 13246 MAR31/08 K.L. E REV PER EAR 13902 JUL12/11 K.L. 14.20±0.25 .559±.010 5.00 .197

PBT 20 GF Tyco

Abstract: usb connector
Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2009 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 1 2 AUG ,2006. LOC DIST R E VISIO N S ALL RIGHTS RESERVED. p LTR DESCRIPTION D DATE DWN 31 JUL12 REVISED. ECR —12 —0 0 2 3 6 3 APVD U J D A o y

Contextual Info: A B C D E G F H REVISIONS 1 3.25 .128 MOUNTING CODE 02 SHOWN E REV DESCRIPTION, ECN, EAR NO. DATE B GUIDE PIN UPDATE EAR14097 JUN19/12 APP'D C REMOVE 10 PWR CONTACT OPTION JUL12/12 S.M. D ADD UL FILE NUMBER MAY15/13 S.M. S.M. 1 DWR - T X XX P - V X 1 X - 0X

Contextual Info: A B C D E G F H REVISIONS 1 3.25 .128 MOUNTING CODE 02 SHOWN E F 9.14 .360 TYP. 2.74 .108 TYP. DATE UPDATE SOCKET APR04/12 APP'D A.G C UPDATE MOUNTING OPTIONS JUL10/12 S.M D REMOVED 10 PWR CONTACT OPTION JUL12/12 S.M E ADD UL FILE NO. JUN14/13 S.M 1 DWR - T X XX S - V X 1 X - 0X

Contextual Info: PS13201 500MHz 75dB Logarithmic/Limiting Amplifier Data Sheet 210892 issue 3 Jul-12 FEATURES • • • • • • • • 75dB Dynamic Range Surface Mount SO Package Adjustable Log Slope and Offset 0dBm RF Limiting Output 60dBm Limiting Range 2V Video Output Range

BCP29

Abstract: BCP49 VPS05163
Contextual Info: BCP29, BCP49 NPN Silicon Darlington Transistors
For general AF applications 4
High collector current
High current gain
Complementary types: BCP28/48 PNP 3 2 C(2,4) 1 B(1) VPS05163 E(3) EHA00009 Type Marking Pin Configuration Package BCP29 BCP 29

BCR08PN

Abstract: VPS05604
Contextual Info: BCR08PN NPN/PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated NPN/PNP Transistors in one package
Built in bias resistor (R1=2.2k, R2=47k) 2 3 1 VPS05604 Tape loading orientation

BCR169S

Abstract: VPS05604 marking WSs
Contextual Info: BCR169S PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=4.7k) 2 3 1 VPS05604 C1 B2 E2

BCR198S

Abstract: VPS05604
Contextual Info: BCR198S PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=47k, R2=47k) 2 3 1 VPS05604

SOTDMA

Abstract: nrzi HDLC CMX910 PLC hmt vhf fsk modem ic CMX7032 RX-2 -G 2248 2249 vhf fsk modem limiter-discriminator
Contextual Info: Marine AIS Processor ICs CML Microcircuits AIS-Dedicated Processors for Maritime Safety COMMUNICATION SEMICONDUCTORS . . . . . . for I and Q Digital and Limiter-Discriminator (Analogue) Based Systems INN/AIS/1 www.cmlmicro.com CML AIS Products With the high integration on-chip of AIS-specific functions and wide-ranging data-signal processing capabilities, these three dedicated AIS IC products

CGY2030M

Abstract: SSOP16 SSOP20 TL 188 TRANSISTOR PNP
Contextual Info: Philips Semiconductors Preliminary specification DECT 500 mW power amplifier CGY2030M FEATURES GENERAL DESCRIPTION • Power Amplifier PA overall efficiency 40% The CGY2030M is a GaAs Monolithic Microwave Integrated Circuit (MMIC) power amplifier specifically

1N5625GP

Contextual Info: 1N5624GP . 1N5627GP 3.0 Amp. Glass Passivated Junction Rectifier Current 3.0 A at 70º C Voltage 200V to 800 V DO-201AD DO-27 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction

Contextual Info: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency

Contextual Info: FT10.J INSULATED STANDARD TRIAC On-State Current 10 Amp Gate Trigger Current £ 50 mA 18 £ 100 mA (17) Off-State Voltage 200 V ÷ 800 V INSULATED TO-220AB 1 FEATURES • Glass/passivated die junctions • Provides voltage insulated tab (rated at 2500V RMS)

Contextual Info: FT12.J INSULATED HIGH COMMUTATION TRIAC On-State Current 12 Amp Gate Trigger Current £ 50 mA 16 £ 35 mA (14) Off-State Voltage 200 V ÷ 800 V INSULATED TO-220AB 1 FEATURES • Provides voltage insulated tab (rated at 2500V RMS) • Glass/passivated die junctions

BCV29

Contextual Info: BCV29, BCV49 NPN Silicon Darlington Transistors 1
For general AF applications 2
High collector current 3
High current gain
Complementary types: BCV28, BCV48 PNP 2 VPS05162 Type Marking Pin Configuration Package BCV29 EF 1=B 2=C 3=E 4=C SOT89 BCV49

Contextual Info: TENTATIVE DATA SHEET FES1DWSR TG 1.0 Amp. Surface Mount Top Glass Passivated Ultrafast Very Soft Recovery Rectifier Current 1.0 A Voltage 200 V SOD123W FEATURES • Top-Glass Technology • Low profile package • Ideal for automated placement • Low power losses, high efficiency

Contextual Info: PRELIMINARY 5SDF 0102C0400 5SDF 0102C0400 High Frequency Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses  High operational reliability Applications  Welding equipment  High current application up to 10 kHz

BCR135S

Abstract: VPS05604
Contextual Info: BCR135S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=10k, R2=47k) 2 3 1 VPS05604

BCR119S

Abstract: VPS05604
Contextual Info: BCR119S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=4.7k) 2 3 1 C1 B2 E2 6 5 4 VPS05604

BCR133S

Abstract: VPS05604
Contextual Info: BCR133S NPN Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=10k, R2 =10k) 2 3 1 VPS05604

BCR183S

Abstract: VPS05604
Contextual Info: BCR183S PNP Silicon Digital Transistor Array 4
Switching circuit, inverter, interface circuit, 5 6 driver circuit
Two galvanic internal isolated Transistors with good matching in one package
Built in bias resistor (R1=10k, R2 =10k) 2 3 1 VPS05604

Contextual Info: 1T3G . 1T7G 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A at 50º C Voltage 200V to 1000 V DO-41 Mini FEATURES • Glass passivated chip junction • High reliability • Cavity-free glass-passivated junction • Low forward voltage drop

Contextual Info: GP10DI . GP10QI 1.0 Amp. Glass Passivated Junction Rectifier Current 1.0 A at 55º C Voltage 200V to 1200 V DO-204AL DO-41 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction