KM29N16000 Search Results

samsung NAND FSR

Abstract: 29cd16 NAND IC s CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR 264Byte
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory SEMICONDUCTOR PRELIMINARY- June 1994 FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000AT/R is a 2M 2,09 7 ,1 5 2 x8 b it N AND • Organization Flash m em ory w ith a spare 64K (65,536)x8 bit. Its N AND

Contextual Info: KM29N16000ERS ELECTRONICS Fl ash 2 M x 8 B i t NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit

Contextual Info: KM29N16000T/R FLASH MEMORY 2M x8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 bit - Data Register : (256 + 8 ) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: KM29N16000T/R 2Mx8Bit FLASH MEMORY NA ND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array - Data Register

KM29N16000ATS

Contextual Info: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000ATS/RS is a 2M 2,097,152 x8 bit NAND • Organization Flash memory with a spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array

Contextual Info: FLASH MEMORY KM29N16000TS/RS 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000TS/RS is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND - Memory Cell Array : (2M +64K) x 8 bit

KM29N16000AT

Abstract: KM29N16000AIT KM29V16000 KM29N16000A
Contextual Info: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.

KM29V16000

Abstract: KM29N16000ATS
Contextual Info: KM29N16000ATS FLASH MEMORY Document Title 2M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed t BERS parameter : 5ms Typ. → 2ms(Typ.). 2. Removed reverse type package.

D240C

Contextual Info: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: K M 2 9 N 16 0 0 0 R Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000T/R is a 2M 2,097,152 x8 bit NAND Flash memory with spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

Contextual Info: PRELIMINARY FLASH MEMORY KM29N16000ATS/RS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: KM29N16000ATS FLASH MEMORY Document Tillo 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.

Contextual Info: KM29N16000ARS Flash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

29W16000

Abstract: 29V160
Contextual Info: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. H istory Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.).

km29n16000at

Abstract: c60h - dc
Contextual Info: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

Contextual Info: KM29N16000AT, KM29N16000AIT FLASH MEMORY Document T ills 2M X 8 Bit NAND Flash Memory R evision H istory Revision No. H istory Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.).

Contextual Info: KM29N16000ER Flash ELECTRONICS 2Mx8Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C ~ +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register

TSOP2-400F

Abstract: CIRCUIT DIAGRAM OF 15 INCH SAMSUNG MONITOR NCC KY TSOP2-400 samsung capacitance Lot Code Identification
Contextual Info: KM29N16000 2M x 8 Bit NAND Flash Memory PRELIMINARY- June 1994 SEMICONDUCTOR FEATURES GENERAL DESCRIPTION • Single 5 - volt Supply • Organization - Memory Cell Array : 2M +64K x 8 - Data Register : (258 + 8) x 8 • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: FLASH MEMORY KM29N16000ATS Document Title 2M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997. April 10th 1997 1.0 Data Sheet, 1998. 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.). 2. Removed reverse type package.

Contextual Info: KM29N16000ETS/RS FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt S upply T h e K M 2 9 N 1 6 0 0 0 E T S /R S is a 2 M (2 ,0 9 7 ,1 5 2 )x 8 b it • W ide Tem perature O peration : -25'C - +85'C

Contextual Info: KM29N16000ET/R FLASH MEMORY 2M X 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000E T/R is a 2M (2,09 7 ,1 5 2 )x8 b it N AND • W ide Tem perature O peration : -25'C - +85'C

Contextual Info: KM29N16000AR Fl ash ELECTRONICS 2Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

D0241_S4

Contextual Info: KM29N16000ET/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C - +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register