KM29V64001 Search Results

TS 4142

Abstract: ro1f
Contextual Info: Advance Information KM29V64001 TS/RS 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M+128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase

Contextual Info: Advance Information KM29V64001T/R FLASH MEMORY 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - voll Supply • Organization The KM29V64001 T/R is a 8M 8,388,608 x8 bit NAND Flash memory with a spare 256K(262,144)x8 bit. Its - Memory Cell Array

Contextual Info: Advance Information KM29V64001T/R FLASH MEMORY 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase

VOICE RECORDER IC programming

Abstract: ri8c
Contextual Info: Advance Information KM29V64001T/R 8Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase

KM29V64001T

Abstract: v6400
Contextual Info: KM29 V 6 4 0 0 1 T Fl ash ELECTRONICS 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64001T/R is a 8M 8,388,608 x8 bit NAND Flash memory with a spare 256K(262,144)x8 bit. Its NAND cell provides the most cost-effective solution for

Contextual Info: Advance Information FLASH MEMORY KM29V64001 TS/RS 8M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply • Organization - Memory Cell Array - Data Register The KM29V64001TS/RS is a 8M 8,388,608 x8 bit NAND Flash memory with a spare 256K(262,144)x8 bit. Its

29V640

Contextual Info: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

KM29N16000TS

Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction 2. Product Guide 3. Ordering information II. 4M FLASH MEMORY 1. KM29N040T 5.0V / 512K x8 bit 17 2. KM29V040T 3.3V / 512K x8 bit 36 57 16M FLASH MEMORY IV. V. 1. KM29N16000T7R 5.0V / 2M 2. KM29N16000TS/RS

J32H

Contextual Info: KM29 V 6 4 0 0 0 R ELECTRONICS ei c r Fl ash Figure 1. FUNCTIONAL BLOCK DIAGRAM _r Vcc Vss Y-Gating A 9 -A 22 2nd half Page Register & S/A X-Buffers Latches & Decoders A0-A7 64M + 2M Bit NAND Flash ARRAY Y-Buffers Latches & Decoders 512+ 16 Bytex 16384 1st half Page Register & S/A

Contextual Info: MEM ORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density 4M bit Org. rower Supply 512Kx 8 5V ±10% 3.3V±10% 16M bit 2M x 8 5V ±10% Part Number KM29N040T Features Package 32B Page Mode 4K B Block size 44 40 T S O P II tR C = 120ns = 20us tRC=80ns 256B Page Mode

Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density 4M bit Org. Power Supply 512KX 3 5V±10% Part Number KM29N040T Speed Features Package = 32B Page Mode 4KB Block size 44 40 TSOP II 256B Page Mode 4KB Block size 44(40) TSOP II tR 15US tR C = 1 2 0 n s 3.3V±10%