KM416S4030B Search Results

Contextual Info: KM416S4030B Preliminary CMOS SDRAM Revision History Revision ,l November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. REV. 1 Nov. '97 ELECTRONICS

KM416S4030BT

Abstract: KM416S4030B
Contextual Info: KM416S4030B CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

KM416S4030BT

Abstract: KM416S4030B KM416S4030
Contextual Info: Preliminary CMOS SDRAM KM416S4030B Revision History Revision .1 November 1997 •tRDL has changed 10ns to 12ns. •Binning -10 does not meet PC 100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. - 1 - ELECTRONICS This Material Copyrighted By Its Respective Manufacturer

KM416S4030BT

Contextual Info: KM416S4030B CMOS SDRAM Revision History Revision .1 N ovem ber 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not m eet PC100 characteristics . So AC param eter/C haracteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage C urrents (Inputs / DQ) are changed.

Contextual Info: KM416S4030B CMOS SDRAM 1M x 16Bitx 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM416S4030B is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG’S high performance CMOS

KM416S4030BT

Abstract: KM416S4030B
Contextual Info: KM416S4030B CMOS SDRAM Revision History Revision .1 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 64M 2nd values. Revision .2 (February 1998) - Input leakage Currents (Inputs / DQ) are changed.

sekisui 5760

Abstract: sis950 SiS chipset 486 SEAGATE st51080n Bt848KPF KSV884T4A1A-07 lad1 5vdc SiS chipset SiS301 kingmax usb flash drive
Contextual Info: SiS540 Super 7 2D/3D Ultra-AGPTM Single Chipset Content Figure .vi Table. vii

Contextual Info: KMM466S424BT 14 4pm S D R A M S O D I M M Revi si on Hi story Revision .3 March 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.

Contextual Info: 144pin SDRAM SODIMM KMM466S824BT2 R e v is io n H is to ry Revision .2 March 1998 Som e Param eter values & C hracteristics of com p, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1uA. Input leakage C urrents (I/O) : ± 5uA to ± 1,5uA.

Contextual Info: KMM366S424BT PC100 SDR AM M O D U L E Re vis ion Hist ory Revision .0 February 1998 -Input leakage Currents (Inputs / DQ) of Component level are changed. llL(lnputs) : ± 5uA to ± 1uA, llL(DQ) : ± 5uA to ± 1.5uA. -C in to be measured at V DD = 3.3V, T a = 23°C, f = 1MHz, V REF =1,4V ± 200 mV.

Contextual Info: KMM466S424BT 144pin SDRAM SODIMM Revision History Revision .3 March 1998 Some Parameter values & Chracteristies of comp, level are changed as below : - Input leakage Currents (Inputs) : + 5uA to + 1uA. Input leakage Currents (I/O) : + 5 u A to + 1.5uA. - Cin to be measured at V DD = 3.3V, TA = 23 °C, f = 1 MHz, V REF = 1 .4V + 200 mV.

KMM366S424BT-GL

Contextual Info: KMM366S424BT PC100 SDRAM MODULE KMM366S424BT SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424BT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM366S824BT PC100 SDRAM MODULE KMM366S824BT SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S824BT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KM48S8030BT-GL

Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

KMM466S824CT2-F0

Abstract: KM416S4030BT
Contextual Info: Preliminary 144pin SDRAM SODIMM KMM466S824CT2 KMM466S824CT2 SDRAM SODIMM 8Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S824CT2 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KM416S4030Bt

Abstract: KMM366S424CTL KMM366S424CTL-G0
Contextual Info: Preliminary PC66 SDRAM MODULE KMM366S424CTL KMM366S424CTL SDRAM DIMM 4Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S424CTL is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung

KM416S4030BT-F10

Abstract: KMM466S824BT2
Contextual Info: KMM466S824BT2 144pin SDRAM SODIMM Revision History Revision .2 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.

KMM366S424BT-GL

Abstract: CADD-30
Contextual Info: KMM366S424BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.

Genesis Gmz1

Abstract: gmz2 LCD toshiba projector FSD21 gmz1 lcd 2x16 green MARKING toshiba 133 mitsubishi fsd5 TDA8752 IBM0316169
Contextual Info: Data Sheet gmFC1 DAT-0005-D November 1998 Genesis Microchip Inc. 200 Town Centre Blvd, Suite 400, Markham, ON Canada L3R 8G5 Tel: 905 470-2742 Fax: (905) 470-9022 2071 Landings Drive, Mountain View, CA, USA 94043 Tel: (650) 428-4277 Fax (650) 428-4288 www.genesis-video.com / info@genesis-microchip.on.ca

KM416S4030BT-G10

Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
Contextual Info: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.

Contextual Info: 144pin SDRAM SODIMM KMM466S424BT Revision History Revision .3 March 1998 Som e Param eter values & C hracteristics of com p, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1uA. Input leakage C urrents (I/O) : ± 5uA to ± 1,5uA.

km48s2020ct

Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
Contextual Info: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks

KMM366S824BT-G8

Abstract: KMM366S824BT-GH KMM366S824BT-GL
Contextual Info: KMM366S824BT PC100 SDRAM MODULE Revision History Revision .0 February 1998 - Input leakage Currents (Inputs / DQ) of Component level are changed. IIL(Inputs) : ± 5uA to ± 1uA, IIL(DQ) : ± 5uA to ± 1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV.

KM416S4030BT-G10

Abstract: KMM366S424BTL-G0 KMM366S424BTL
Contextual Info: KMM366S424BTL PC66 SDRAM MODULE Revision History Revision .3 March 1998 Some Parameter values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1.5uA. - Cin to be measured at VDD = 3.3V, TA = 23°C, f = 1MHz, VREF = 1.4V ± 200mV.