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    KM416S8030 Price and Stock

    Samsung Semiconductor KM416S8030T-F10T

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    Bristol Electronics KM416S8030T-F10T 1,900
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    Samsung Semiconductor KM416S8030BT-FL

    8M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
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    Quest Components KM416S8030BT-FL 14
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    Others KM416S8030T-GL

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    Quest Components KM416S8030T-GL 1
    • 1 $12.5656
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    KM416S8030 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM416S8030 Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S8030B Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BN Samsung Electronics 128Mb SDRAM Shrink TSOP 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BN-G/FH Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM Shrink TSOP Original PDF
    KM416S8030BN-G/FL Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM Shrink TSOP Original PDF
    KM416S8030BT-G/F10 Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_F10 Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3) Original PDF
    KM416S8030BT-G/F8 Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_F8 Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3) Original PDF
    KM416S8030BT-G/FA Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_FA Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 133 MHz (CL=3) Original PDF
    KM416S8030BT-G/FH Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_FH Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2) Original PDF
    KM416S8030BT-G/FL Samsung Electronics 128Mbit SDRAM 2M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    KM416S8030BT-G_FL Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3) Original PDF
    KM416S8030T-G/F10 Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S8030T-G_F10 Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHz Original PDF
    KM416S8030T-G/F8 Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM Original PDF
    KM416S8030T-G_F8 Samsung Electronics 2M x 16-Bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHz Original PDF
    KM416S8030T-G/FH Samsung Electronics 2M x 16-Bit x 4 Banks Synchronous DRAM Original PDF

    KM416S8030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM416S8030

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS


    Original     		PDF KM416S8030 16Bit KM416S8030

    KM416S8030

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S8030 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS


    Original     		PDF KM416S8030 16Bit KM416S8030 A10/AP

    KM416S8030B

    Abstract: No abstract text available
    Text: KM416S8030B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Jun. 1999 KM416S8030B CMOS SDRAM Revision History


    Original     		PDF KM416S8030B 128Mbit 16Bit A10/AP KM416S8030B

    Untitled

    Abstract: No abstract text available
    Text: KM416S8030A CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 May. 1999 KM416S8030A CMOS SDRAM Revision History Revision 0.0 May 15, 1999


    Original     		PDF KM416S8030A 128Mbit 16Bit A10/AP

    KM416S8030BN

    Abstract: KM416S8030B
    Text: shrink-TSOP KM416S8030BN Preliminary CMOS SDRAM 128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Aug. 1999 shrink-TSOP


    Original     		PDF KM416S8030BN 128Mb 16Bit A10/AP KM416S8030BN KM416S8030B

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: KMM366S924ATS PC100 Unbuffered DIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM366S924ATS PC100 118DIA 000DIA 8Mx16 KM416S8030AT

    Untitled

    Abstract: No abstract text available
    Text: KMM366S924TS PC100 Unbuffered DIMM Revision History Revision 0.1 Jun. 14, 1999 - Changed "Detail C" in PCB Dimension and eliminated misprinted heat sink. Rev. 0.1 Jun. 1999 PC100 Unbuffered DIMM KMM366S924TS KMM366S924TS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM366S924TS PC100 KMM366S924TS 8Mx64 8Mx16, 400mil

    ICC2N

    Abstract: No abstract text available
    Text: KMM464S1724AT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM464S1724AT1 PC100 8Mx16 KM416S8030AT ICC2N

    Untitled

    Abstract: No abstract text available
    Text: KMM464S924AT1 PC100 SODIMM Revision History Revision 0.0 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM464S924AT1 PC100 8Mx16 KM416S8030AT

    Untitled

    Abstract: No abstract text available
    Text: KMM464S1724T1 PC100 144pin SDRAM SODIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail Y" in PCB Dimension. Rev.0.1 May 1999 KMM464S1724T1 PC100 144pin SDRAM SODIMM KMM464S1724T1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM464S1724T1 PC100 144pin KMM464S1724T1 16Mx64 8Mx16

    Untitled

    Abstract: No abstract text available
    Text: KMM366S924BTS PC100 Unbuffered DIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM366S924BTS PC100 118DIA 000DIA 8Mx16 KM416S8030BT

    MS-24L244

    Abstract: samsung u2 cable 3528 SMD Samsung LED smd diode U12 in4148 smd diode LCBHBT161M X4 DIODE SMD resistor 2012 2012 SMD resistor SMD resistor 334
    Text: MODEL : S3C2400X 220Mhz No 1 2 3 4 5 Reference CN1 CN2 CON1 CON2 CON3 6 CON4 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 CON5, CON6 CON7 CON8 C1, C2, C3, C4, C5, C6, C7, C8, C17, C18, C19, C20, C21, C22, C23, C24, C25, C26, C37, C38,


    Original     		PDF S3C2400X 220Mhz) R-300H CL-PD6710 144VQFP) 25Mhz TPS2211 16SOP) 768Khz 12Mhz MS-24L244 samsung u2 cable 3528 SMD Samsung LED smd diode U12 in4148 smd diode LCBHBT161M X4 DIODE SMD resistor 2012 2012 SMD resistor SMD resistor 334

    32 inch TV samsung lcd Schematic

    Abstract: lcd tv inverter board schematic lcd inverter board schematic lcd inverter board schematic samsung tv samsung lcd tv power supply schematic 32 inch samsung LCD TV SCHEMATIC schematic lcd inverter samsung schematic Samsung TV led backlight samsung lcd inverter schematic TC59SM716FT80
    Text: Intel StrongARM* SA-1110 Development Board Specification Update October 2000 Notice: The Intel® StrongARM* SA-1110 Development Board may contain design defects or errors known as errata. Characterized errata that may cause the board’s behavior to deviate from


    Original     		PDF SA-1110 SA-1110 32 inch TV samsung lcd Schematic lcd tv inverter board schematic lcd inverter board schematic lcd inverter board schematic samsung tv samsung lcd tv power supply schematic 32 inch samsung LCD TV SCHEMATIC schematic lcd inverter samsung schematic Samsung TV led backlight samsung lcd inverter schematic TC59SM716FT80

    KMM366S924T-G8

    Abstract: KMM366S924T-GH KMM366S924T-GL
    Text: KMM366S924T PC100 SDRAM MODULE Revision History Revision .0 Aug. 1998 - Eliminated Preliminary REV. 0 Aug. 1998 KMM366S924T PC100 SDRAM MODULE KMM366S924T SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


    Original     		PDF KMM366S924T PC100 KMM366S924T 8Mx64 8Mx16, 400mil KMM366S924T-G8 KMM366S924T-GH KMM366S924T-GL

    KMM366S924BTS

    Abstract: No abstract text available
    Text: KMM366S924BTS PC133 Unbuffered DIMM Revision History Revision 0.0 Oct., 1999 • PC133 first published. REV. 0 Oct. 1999 KMM366S924BTS PC133 Unbuffered DIMM KMM366S924BTS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		PDF KMM366S924BTS PC133 KMM366S924BTS 8Mx64 8Mx16,

    KMM466S1724T2-F0

    Abstract: No abstract text available
    Text: KMM466S1724T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6) is changed. Revision .3 (September 1998) - Corrected the Part Number as KMM466S1724T2. REV. 3 Sept. '98 Preliminary 144pin SDRAM SODIMM KMM466S1724T2


    Original     		PDF KMM466S1724T2 144pin KMM466S1724T2. KMM466S1724T2 16Mx64 8Mx16, KMM466S1724T2-F0

    a9333

    Abstract: No abstract text available
    Text: Preliminary KM416S8030 CMOS SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation The KM416S8030 is 134,217,728 bits synchronous high data


    OCR Scan     		PDF KM416S8030 16Bit KM416S8030 a9333

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S8030 2M X 16Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 416S8030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply rate Dynam ic RAM organized as 4 x 2,097,152 w ords by 16 • LVTTL com patible with m ultiplexed address


    OCR Scan     		PDF KM416S8030 16Bit 416S8030 10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 144pin SDRAM SODIMM KMM466S1724T2 KMM466S1724T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SP GENERAL DESCRIPTION FEATURE The Samsung KMM466S1724T is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM466S1724T2 KMM466S1724T 144pin 16Mx64 8Mx16, 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. REV. 2 April '98 aJECTRONCS Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM


    OCR Scan     		PDF KMM466S1724T2_ 144pin KMM466S1724T 16Mx64 8Mx16, 400mil KMM466S1724T-F0

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S924T_ 144pin SDRAM SODIMM KMM466S924T SDRAM SODIMM 8M x64 SDRAM SO DIM M based on 8M x16, 4B anks, 4K Refresh, 3.3V S ynchronous D R AM s w ith SPD G ENER AL D ESCRIPTION FEATURE The Samsung KM M466S924T is a 8M bit x 64 Synchronous


    OCR Scan     		PDF KMM466S924T_ 144pin KMM466S924T M466S924T 400mil 144-pin

    ma2820

    Abstract: No abstract text available
    Text: PC100 SDRAM MODULE KMM366S924TS Revision History [Rev.O] March 24, 1999 Rev.O Mar. 1999 ELECTRONO PC100 SDRAM MODULE KMM366S924TS KMM366S924TS SDRAM DIMM 8Mx64 SDRAM DIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION


    OCR Scan     		PDF PC100 KMM366S924TS KMM366S924TS 8Mx64 8Mx16, 400mil ma2820

    Untitled

    Abstract: No abstract text available
    Text: SERIAL PRESENCE DETECT SDRAM MODULE PC100 Unbuffered SDRAM SODIMM 144pin SPD Specification REV. 1.50 November 1998 REV. 1.50 Nov. 1998 SERIAL PRESENCE DETECT SDRAM MODULE KMM464S424CT1-FH/FL •Organization : 4MX64 •Composition : 4MX16 *4 •Used component p a rt# : KM416S4030CT-FH/FL


    OCR Scan     		PDF PC100 144pin) KMM464S424CT1-FH/FL 4MX64 4MX16 KM416S4030CT-FH/FL 4K/64ms 100MHz