KM41C10 Search Results

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 QG15431 Ô4S KM41C1001C CM OS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1001C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

41C1000

Abstract: KM41C1000CJ-7 KM41C1000C-6 1mx1 DRAM DIP 41C100 KM41C1000C-8 KM41C1000CJ7
Contextual Info: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM41C1000BJ

Abstract: KM41C1000B KM41C1000BP KM41C1000B-7 41C1000 KM41C1000B-8 41C1000B
Contextual Info: KM41C1000B CMOS DRAM 1 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: • • • • • • • • • tnAc tcAc •nc KM41C1000B-6 60ns 20ns 110ns KM41C1000B-7 70ns 20ns 130ns KM41C1000B-8 80ns 20ns

41C1000A

Abstract: KM41C1000 KM41C1000A-10 KM41C1000AZ 41C1000 km41c1000a KM41C1000AJ
Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 7^4142 0005117 b KM41C1Q00A CMOS DRAM 1 M x 1 Bit Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC KM41C1000A- 7 • • • • • • • • • tcAC The Samsung KM41C1000A is a CMOS high speed

1000CLP

Contextual Info: CMOS DRAM KM41C1000CL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KMM581000C DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung KMM581000C consist of eight KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy

Contextual Info: MEE D SAMSUNG ELEC TRONICS INC n 7%4142 DGlOObS 1 BHSMiSK KM41C1002B CMOS DRAM 1M X 1 Bit C M O S Dynamic R A M with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002B is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­

km41C1000Dj

Contextual Info: KM41C1000D CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access tlme -6, -7 or -8 , power consumption (Normal

Contextual Info: SAMSUNG ELECTRONICS INC L7E D TTbMma KM41C1000CL 00153=17 ÔS7 CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

KM41C1002

Contextual Info: d e | 7 i y m 4 a ooossob 2 |~¿ SAMSUNG SEMICONDUCTOR INC Tfi X.'Xv5:v r ^ F î PRELIMINARY SPECIFICATION KM41C1002 CMOS DRAM 1M x 1 Bit Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002 Is a CMOS high speed

KM418C256

Abstract: KM48C2100AL KM416C254 KM44V4100AL KM44C1003
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE DRAM Density 1M bil Org. 1Mx1 Power Supply 5V±10% Part Number KM41C1000D# Speed(ns) 60/70/80 Features Fast Page 5V±10% KM44C256D# 60/70/80 Fast Page 4Mx1 5V±10% KM41C4000C# 50/60/70/80 Fast Page KM41C4002C# 60/70/80

KM41C4000BJ

Abstract: 256k x 4 KM44C256CJ km44c256cp
Contextual Info: MEMORY ICs FUNCTION GUIDE Dynam ic RAM Continued -Capacity 1 M b it 4 M b it - Part Number Organization KM41C1002CVR KM41C1002CT 1M x1 1M x 1 KM41C1002CTR 1M x1 Speed(ns) Technology Features Packages Remark ' 60/70/80 CMOS Static Column

Contextual Info: KM41C1002B CMOS DRAM 1 M X 1 Bit C M O S Dynam ic R A M with Static Column M o d e FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The S am sung KM41C1002B is a CMOS high speed 1,048,576 x 1 Dynam ic Random A ccess Memory. Its de­ sig n is op tim ize d fo r high perform ance ap p lica tio n s

41c1000

Abstract: AS11D KM41C1000CP
Contextual Info: KM41C1OOOC/CL/CSL CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM41C1000C/CL/CSL-6 tR A C tC A C tR C 60ns 15ns 110ns KM41C1000C/CL/CSL-7 70ns 20ns 130ns KM41C1000C/CLÆSL-8 80ns 20ns 150ns •

km41c1000cj-6

Abstract: KM41C1000C-7 KM41C1000C-6 m4lc KM41C1000CJ-7 KM41C1000CP KM41C1000CJ
Contextual Info: CMOS DRAM KM41C1000C 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

KM41C1001BP

Contextual Info: i+2E D S A M S U N G E L E C T R O N I C S INC • 7^4142 KM41C10Ö1B GGIOOSO T ■ SflGK CMOS DRAM 1 M X 1 B it C M O S D y n a m ic R A M w ith N ib b le M o d e ‘I _ ' T ' tt b - Z 5 .- r 5 FEA TU RES GEN ERAL DESCRIPTION • Performance range: The Samsung KM41C1001B is a CMOS high speed

Contextual Info: SAMSUNG ELECTRONICS INC 7Tb4142 0015445 33T • SNGK b7E D CMOS DRAM KM41C1002C 1,048,576x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002C is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­

Contextual Info: CMOS DRAM KM41C1000CSL 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000CSL is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: CMOS DRAM KM41C1002C 1,048,576x1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C1002C is a CMOS high speed 1,048,576 x 1 D ynam ic Random A ccess M em ory. Its de­ sig n is op tim ize d fo r high perform ance a p p lica tio n s

Contextual Info: KM41C1000C CMOS DRAM 1Mx1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1000C is a CMOS high speed 1,048,576x1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM41C1002C CMOS DRAM s 1,048,576x1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The S am sung KM41C1002C is a CMOS high speed 1,048,576 x 1 D ynam ic Random A ccess M em ory. Its de­ sign is op tim ize d fo r high perform ance ap p lica tio n s

KMM591000C8

Abstract: KMM591000C KMM591000C7 KMM591000C-7
Contextual Info: KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000C is a 1M b itx 9 Dynamic RAM high density memory module. The Samsung KMM591000C consist of nine KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy