KM41C4000BJ Search Results

KM41C4000BJ7

Abstract: KM41C4000BJ6 KM41C4000BJ km41c4000B KM41C4000BJ-6
Contextual Info: KM41C4000B CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tRAC tcAc tRC KM41C4000B-6 60ns 15ns 110ns KM41C4000B-7 70ns 20ns 130ns KM41C4000B-8 80ns 20ns

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DDlSSSfl 171 I KM41C4000B SUGK CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­

km41c4000bj7

Abstract: KM41C4000BZ-7 KM41C4000BJ-6 KM41C4000BJ-8
Contextual Info: KM41C4000B CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7 ^ 4 1 4 2 DD147b3 100 KMM594100N DRAM MODULES 1 M x 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KMM594100N is a 4M b itx 9 Dynamic RAM high density memory module. The Samsung

TCA 720

Abstract: m59400 KM41C4000BJ
Contextual Info: KMM594000B DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc *RC KMM594000B-6 60ns 15ns 110ns KMM594000B-7 70ns 20ns 130ns KMM594000B-8 80ns 20ns 150ns Fast Page Mode operation CAS-before-RAS refresh capability

KM41C4000BJ

Abstract: 256k x 4 KM44C256CJ km44c256cp
Contextual Info: MEMORY ICs FUNCTION GUIDE Dynam ic RAM Continued -Capacity 1 M b it 4 M b it - Part Number Organization KM41C1002CVR KM41C1002CT 1M x1 1M x 1 KM41C1002CTR 1M x1 Speed(ns) Technology Features Packages Remark ' 60/70/80 CMOS Static Column

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1

KM424C256Z

Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100

KM41C4000BJ

Abstract: KMM594000B-6 KMM594000B KMM594000B-7 KMM594000B-8 30-pin simm memory 30-pin simm memory dynamic 4Mx9 DRAM 30-pin SIMM
Contextual Info: S A N S U N G E L E C T R O N I C S INC b 7 E T> • 7 T b m M 5 GDlSlDb KMM594000B T H 7 ■ SriGK DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc I rc 60ns 15ns 110ns KMM594000B-7 70ns 20ns 130ns

Contextual Info: SAMSUNG ELE CTRONICS INC b?E D • 7^4142 KMM584000B ODISCHb 176 ■ SM6K DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000B is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung

KMM591000AN

Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC

uras 4

Abstract: km41c4000bj7
Contextual Info: KM41C4000B CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C4000B is a high speed CMOS 4,194,304 x 1 D ynam ic Random A ccess M emory. Its de­ sig n is op tim ize d fo r high pe rform ance a p p lica tio n s