KSC2682 Search Results

fjaf6812

Abstract: tip41 darlington fjaf6920 BUT12(A)F KSA1010 transistor bd140-15 bu408 equivalent FJL6920 equivalent fjl6820 FJL6920
Contextual Info: Discrete Bipolar Power Transistor – General Purpose Part Number IC A VCEO (V) VCBO (V) VEBO (V) PC (W) hFE VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320

BJT BD139

Abstract: TIP416 ksh200 equivalent BD243 ksh50 power BJT BD242 tip426 BD53 kse13003
Contextual Info: Discrete Power BJT General Purpose Products IC A VCEO (V) VCBO (V) VEBO (V) hFE PC (W) VCE (sat) Min Max @ IC (A) Typ (V) Max (V) TO-126 NPN Configuration KSC2682 0.1 180 180 5 8 100 320 0.01 0.12 0.5 KSC3502 0.1 200 200 5 5 40 320 0.01 - 0.6 KSC2258 0.1

A1142-Y

Abstract: KSC2682
Contextual Info: KSA1142 KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier • Complement to KSC2682 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: KSA1142 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQENCY POWER AMPLIFIER T O -126 • C om plem ent to KSC2682 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic V cbO Sym bol - 180 V C ollector-E m ltter Voltage

Contextual Info: KSA1142 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQENCY POWER AMPLIFIER TO-126 • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage Characteristic VcB O Symbol - 180 V Collector-Emitter Voltage

KSA1142

Abstract: KSC2682
Contextual Info: KSC2682 KSC2682 Audio Frequency Power Amplifier • Complement to KSA1142 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

Contextual Info: KSA1142 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER TO-126 • C om plem ent to KSC2682 ABSOLUTE MAXIMUM RATINGS C h a ra c te ris tic Sym bol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

ksd 180

Abstract: ksd 180/60 ksd 250 se130 tip142
Contextual Info: TRANSISTO RS FUNCTION GUIDE 2. POWER TRANSISTORS 2.1. General Purpose Transistors 2.1.1 T O -1 2 6 Type T r a n s is to rs Device Type Condition Ic VCEO A (V) NPN PNP 0.1 180 KSC2682 KSA1142 200 KSC3502 300 KSC3503 0.1 VCE 200 Condition hFE Ic Ic VcE{sat)(V)

Contextual Info: KSC2682 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO -126 • Complement to KSA1142 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage C haracteristic VcBO Symbol 180 V Collector- Emitter Voltage VcEO 180 V Emitter- Base Voltage

IRFDC

Abstract: KSC2682 KSA1142 KSC2688 samsung tv R3307 audio output TRANSISTOR NPN SAMSUNG transistor ksc2682 transistor J 3305 74143
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2682 IME O | 7^4142 0GG7Sfc>4 4 N P N EPITAXIAL SILICO N TRAN SISTO R AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSA1142 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage

KSC2682

Abstract: KSA1142
Contextual Info: KSC2682 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER T O - 126 • C o m p le m e n t to K S A 1 142 A BSOLUTE M AXIMUM RATINGS R a tin g U n it C o lle c to r- B a s e V o lta g e C h a r a c te r is tic V cB O Sym bol 180 V C o lle c to r- E m itte r V o lta g e

Contextual Info: KSC2682 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSA1142 ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Unit Collector- Base Voltage VcBO 180 V Collector- Emitter Voltage Emitter- Base Voltage VcEO V V mA W

E177

Contextual Info: KSC2682 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER T O -126 • Complement to KSA1142 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 180 180 5 100 1.2 8 150 -5 5 ^ 1 5 0 V V V mA W W °C I I Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: KSA1142 KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier • Complement to KSC2682 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

LT 74 s

Contextual Info: KSA1142 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQENCY POWER AMPLIFIER • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

pnp high emitter base voltage 15 volt

Abstract: KSA1220 KSA1142 KSA1220A KSC2682 KSC2690 KSC2690A
Contextual Info: SAMSUNG S E M I C O N D U C T O R . INC KSA1142 14E D | ?Tfc,m 42 00074^4 T PNP EPITAXIAL SILICON TRANSISTOR T ~ AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER 1 3 - / 7 • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic

Contextual Info: KSA1142 KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier • Complement to KSC2682 TO-126 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
Ratings Units VCBO Symbol

KSA1142

Contextual Info: KSA1142 KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier • Complement to KSC2682 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

Contextual Info: KSC2682 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER • C om plem ent to K S A 1 142 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage Characteristic V cbO Sym bol 180 V C ollector- E m itter Voltage VcEO 180 V Em itter- Base Voltage

Contextual Info: KSC2682 KSC2682 Audio Frequency Power Amplifier • Complement to KSA1142 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

KSC5036

Abstract: KSC3502 BD139 KSE350 KSC5034 KSA1142 KSA1381 KSA1406 KSC2258 KSC2258A
Contextual Info: SAMSUNG ELECTRONICS INC bOE D • 7 ^ 4 1 4 2 GG11S31 Gb7 HSIIGK TRANSISTORS FUNCTION GUIDE 2. POWER TRANSISTORS 2-1. General Purpose Transistors 2.1.1 TO-126 Type Transistors Device Type Veto N PN A (V) 0.1 180 KSC2682 200 KSC 3502 300 KSC3503 0.1 200 Condition

KSA1142

Abstract: KSC2682
Contextual Info: KSA1142 KSA1142 Audio Frequency Power Amplifier High Freqency Power Amplifier • Complement to KSC2682 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage

BD53A

Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
Contextual Info: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)