L3B72S4 Search Results

2N5108

Contextual Info: I 4bE D L3b72S4 I OCmOfc.2 4 • M 0 ïb T : 3 3 " Û 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5108 MOTOROLA SC XSTRS/R F T h e R F L in e 1.0 W -1 GHz HIGH FREQUEN CY TRANSISTOR NPN SILIC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier, frequency multiplier, or oscillator applica*

bo 139

Abstract: bd 1382 semiconductor bo 137 BD 266 S BD 139 N bd 317 BD139.6 TR bd 139 BD139 NPN BD 139 140
Contextual Info: MOTORCL A SC 1EE D § L3b72S4 0GflM703 T | XSTRS/R F BD135,-6,-10,-16 BD137,-6,-10,-16 BD139,-6,-10,-16 MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLA STIC M EDIUM POW ER SILIC O N NPN TR A N SISTO R 1.S AMPERE POWER TRANSISTOR . . . designed for use as audio amplifiers and drivers utilizing

CA3600

Contextual Info: MOTOROLA SC XSTRS/R F 12E D | L3b72S4 DflflflSbE 5 | MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA C A 3600 The RF Line 4 0 -C h an n e l 330 M H z C A T V Line Extender A m p lifie r 34 dB 40-330 M H z 40-C H A N N EL C ATV LINE E XT E N D ER A M PLIF IER . . . designed for broadband applications requiring low-distortion amplification. Specifi­

TO206AB

Contextual Info: MOTORCLA SC lEE O I XSTRS/R F L3b72S4 Q Of lt iMBl 2 1 ^-S7-Ä3 2NS230" CASE 26-03, STYLE 1 TO-46 TO-206AB M AXIM UM RATINGS Symbol Value Emitter-Collector Voltage Bating V e CO 20 Unît Vdc Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage V EBO 30

BSS78

Contextual Info: MOTOROLA SC {XSTRS/R Rating F> L3b72S4 bflE D Symbol Value Unit C o llector-E m itter Voltage v CEO 250 Vdc Collector-Base Voltage VCBO 250 Vdc Em itter-Base Voltage v EBO 6.0 Vdc C o lle ctor C urrent — Continuous 'c 1.0 Ade Total Device D issipation ci T /\ = 25°C

BSS63L

Contextual Info: 15E 0 I L3b72S4 0005*140 7 | M A X IM U M R A T IN G S MOTOROLA SC Symbol Value Unit Collector-Emitter Voltage VCEO 100 Vdc Collector-Emitter Voltage Rb e = 10 kO VCER 110 Vdc ic 100 mAdc Symbol M ax Unît Pd 225 mW 1.8 mW/°C RflJA 556 °c/w pd 300 mW 2.4

MPSU07

Abstract: ic 31050 MC 139 transistor MPSU57 2S53
Contextual Info: MOTOROLA SC 1SE D I L3b72S4 □ OfiSM'ìS 1 | XSTRS/R F T -3 Ì-0 7 MOTOROLA SEMICONDUCTOR MPS-U07 TECHNICAL DATA NPN SILICON AMPLIFIER TRANSISTOR NPN SILICON ANNULAR AMPLIFIER TRANSISTOR . . . designed for general-purpose, high-voltage amplifier and driver

Contextual Info: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

CA2850R

Abstract: CA2851R MOTOROLA wideband hybrid amplifiers MOTOROLA wideband hybrid CA2850
Contextual Info: MOTOROL A SC XSTRS/R F 4bE D • b3b72S4 OGRSHf i O S ■ MOTb -¡^ 7 ^ - 0 9 -0 1 MOTOROLA m SEM IC O N D U C T O R TECHNICAL DATA The RF Line W id e b an d Linear A m p lifie rs . d e sign e d for am plifier applications in 50 to 100 o h m sy ste m s requiring w ide

BUZ71L

Abstract: BUZ-71L T39 diode S3848 Z71L
Contextual Info: MOTOROLA SC XSTRS/R F (□3b7254 5bE.D Q D T C HC m b Order this data sheet by BUZ71L/D MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA BU Z71L MTP14IM05L Pow er Field Effect Transistor IM-Channel Enhancem ent-Mode Silico n Gate These T M O S Pow er FETs are designed for low voltage,

MPS911

Abstract: zt145
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistors MM BR911LT1 MPS911 . . . designed for low noise, wide dynamic range front-end amplifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as well as

MPSU95

Abstract: MPSU45 Motorola MPSU95 MPS-U95 a38 TRANSISTOR transistor mpsu45 Motorola MPSU45 motorola darlington power transistor audio motorola transistor r 724 transistor f 506
Contextual Info: MOTOROLA SC XSTRS/R 1SE D I F b3b?2S4 0005513 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP SILICON DARLINGTON TRANSISTOR PNP SILICON DARLINGTON AM PLIFIER TRANSISTOR . . designed for amplifier and driver applications. High DC Current Gain — hp£ = 25,000 Min @ lc = 200 mAdc

2N3501

Abstract: 2N3501 MOTOROLA 2N3500 MOTOROLA 2n3500
Contextual Info: 2N3500 2N3501* M A XIM U M RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 150 Vdc Collector-Base Voltage v CBO 150 Vdc Emitter-Base Voltage vebo 6.0 Vdc Rating Collector C u rrent— Continuous :C 300 mAdc Total Device Dissipation @ Ta = 25°C Derate above 25°C

D2C02

Abstract: Motorola TMOS Power FET P-Channel DIODE F2C N and P MOSFET
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F2C 02H D Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect TVansistors COMPLEMENTARY DUAL TM O S POW ER FET 2.0 AM PERES 20 VOLTS MiniMOS devices are an advanced series of power MOSFETs

221A-06

Abstract: AN569 MTP5N20 TMOS Power FET MOSFET DATA AN569 in Motorola Power Applications
Contextual Info: M OTOROLA SC iX S T R S /R F> b fl E • b 3 t.7 ZSH n m f l b ?4 Tbl MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP5N20 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-Mode Silicon Gate T This TMOS Power FET is designed fo r high voltage, high speed