L7C197 Search Results

Contextual Info: L7C197 2 5 6K x 1 Static RA M □ 256K x 1 Static R A M w ith Separate I / O , C h ip Select Pow erdow n □ A uto-P ow erd ow n D esign □ A dvanced C M O S T echnology □ H igh Sp eed — to 15 ns m axim um □ Low P ow er O peration A ctive: 165 m W typical at 35 ns

Contextual Info: L7C197 *- — • — - - L7 C 1 0 7 256K x 1 Static RAM JbVUI-S ■ : XJHHO -■A I h □ 256K x 1 Static RAM with Separate 1 /0 , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

Contextual Info: Typical DC & AC Characteristics 256K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 256K static RAM products listed below: 256K Static RAMs L7C197 — 2 5 6 K x l L7C194 — 64K x4 L7C195 — 64K x4

Contextual Info: L7C197 256K x 1 Static RAM FEATURES □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 210 mW typical at 45 ns Standby: 500 nW typical

CY7C197

Abstract: IDT71257 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25
Contextual Info: L7C197 L7C197 DEVICES INCORPORATED 256K x 1 Static RAM 256K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum

4016 static ram

Abstract: TTL COMPATIBLE 4016
Contextual Info: LOGIC DEVICES INC ELE D m SSÌaSTQS QG012Q5 =1 • _ 4 Megabit 256K x 16-bit Static RAM Module FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs Q Advanced CMOS Technology Q High Speed, Low Power

71257

Abstract: CY7C197 L7C197CC45 L7C197CM45 L7C197PC45 L7C197VC45 L7C197WC45
Contextual Info: L7C197 256K x 1 Static RAM FEATURES DESCRIPTION □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 210 mW typical at 45 ns

1m x 16 memory module

Contextual Info: 4 Megabit 256K x 16-bit Static RAM Module LMM4016 DESCRIPTION FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs □ Advanced CMOS Technology □ High Speed, Low Power Consumption □ TTL Compatible Inputs and

Contextual Info: LOGIC DEVICES INC 2bE D • SSbSlOS Q001Û44 b ■ T - 9 i - 2 3 -O S ' L7C197 256K x 1 Static RAM flÄ fü iF lE S - □ 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum

Contextual Info: L7C197 256K x 1 Static RAM FEATURES □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation Active: 210 mW typical at 45 ns Standby: 500 xW typical

Contextual Info: L q Q IC L7C197 25 6K x 1 Static RA M DEVICES INCORPORA I ET FEATURES DESCRIPTION □ 256K x 1 Static R A M w ith Separate I / O , C hip Select Pow erdow n □ A uto-P ow erd ow n D esign □ A dvanced C M O S T echnology □ H igh Speed — to 15 ns m axim um

Contextual Info: jjjm ÆmSmmkjjjjjj jmSSm L7C197 •!—mmmm MMMM 256K x 1 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 256K x 1 Static RAM w ith Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum

Contextual Info: L7C197 25 6K x 1 Static R A M FEATURES □ 256K x 1 Static RAM with Separate I/O , Chip Select Powerdown □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 15 ns maximum □ Low Power Operation Active: 165 mW typical at 35 ns Standby: 5 mW typical

IDT71257

Abstract: CY7C197 L7C197CC25 L7C197PC15 L7C197PC20 L7C197PC25
Contextual Info: L7C197 L7C197 DEVICES INCORPORATED 256K x 1 Static RAM 256K x 1 Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION q 256K x 1 Static RAM with Separate I/O, Chip Select Powerdown q Auto-Powerdown Design q Advanced CMOS Technology q High Speed — to 15 ns maximum

Package 48 LCC

Contextual Info: Static RAM Package Availability Guide Package Availability Code*2* Part No.O No. Pins Plastic DIP Sldebraze Hermetic DIP CerDIP SOIC Gull-Wing SOJ Plastic (J-Lead] LCC Ceramic LCC 16K Static RAMs K6 L7C167 20 P6 D7 C2 U3 W3 L7C168 20 P6 D7 C2 U3 W3 L7C170

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in