LFBGA48 Search Results

STA2500D

Abstract: 3DH-5 sta2500 bluetooth test mode sta2500d bt Coexistence wire STLC2500D uart 16750 baud rate 2500D7 bluetooth transmitter receiver parallel chip E1500
Contextual Info: STA2500D Bluetooth V2.1 + EDR "Lisbon" for automotive applications Features • Based on Ericsson technology licensing baseband core (EBC) LFBGA48 (6x6x1.4mm; 0.8mm Pitch) ■ Bluetooth™ specification compliance: V2.1 + EDR (“Lisbon”) – Point-to-point, point-to-multipoint (up to 7

Contextual Info: Package outline LFBGA487: plastic low profile fine-pitch ball grid array package; 487 balls A B D SOT1077-1 ball A1 index area E A A2 A1 detail X e1 e AG AD 1/2 e ∅v ∅w b M M C C A B C y y1 C AH AF AC AA V R M J Y U P L H F C E B AE AB e W T e2 N 1/2 e

sot488

Contextual Info: PDF: 1999 Jun 08 Philips Semiconductors Package outline LFBGA48: plastic low profile fine-pitch ball grid array package; 48 balls; body 5.5 x 5.5 x 1.05 mm SOT488-1 D ball A1 index area A2 A E A1 detail X A b ∅w M y v A ZD e ZE J H G e F E D C B A 1 2 3 4 5 6 7 8 9

Contextual Info: PC board footprint NXP Semiconductors Footprint information for reflow soldering of LFBGA487 package SOT1077-1 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste

Contextual Info: Reflow soldering footprint Footprint information for reflow soldering of LFBGA487 package SOT1077-2 Hx P P Hy see detail X Generic footprint pattern Refer to the package outline drawing for actual layout solder land solder paste deposit solder land plus solder paste

Contextual Info: P-LFBGA48-0707-0.80 5 パッケージ材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 0.12 TYP. 1 版/01.06.20

Contextual Info: P-LFBGA48-0707-0.80 5 Package material Package weight g Rev. No./Last Revised Epoxy resin 0.12 TYP. 1/Jun. 20, 2001

Contextual Info: Package outline LFBGA487: plastic low profile fine-pitch ball grid array package; 487 balls A B D SOT1077-2 ball A1 index area E A A2 A1 detail X e1 e AG AD 1/2 e ∅v ∅w b C C A B C y y1 C AH AF AC AA V R M J Y U P L H F C E B AE AB e W T e2 N 1/2 e K G

Contextual Info: P-LFBGA48-0707-0.80 5 パッケージ材質 ボール材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 Sn/Pb 0.14 TYP. 1 版/98.7.27

Contextual Info: BGA, HBGA, LFBGA & TFBGA FOOTPRINT REFLOW SOLDERING Philips Semiconductors F Prow ∅C Pball G Prow Pball MBL179 Reflow soldering(1) FOOTPRINT DIMENSIONS (mm) Prow Pball dia C F G PLACEMENT ACCURACY BGA156 SOT472-1 1.00 1.00 0.50 0.45 15.30 15.30 ±0.10

M29W160

Abstract: M29W160BB M29W160BT sequential timer using 555
Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

M29W160DB

Abstract: M29W160DT
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME Figure 1. Packages

38000h-3FFFF

Abstract: M29W160BB M29W160BT
Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

Contextual Info: STA2500D Bluetooth V2.1 + EDR "Lisbon" for automotive applications Features • Based on Ericsson technology licensing baseband core (EBC) ■ Bluetooth™ specification compliance: V2.1 + EDR (“Lisbon”) – Point-to-point, point-to-multipoint (up to 7

M29W160BB

Abstract: M29W160BT
Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

sta2500

Abstract: STA2500D ARM7 pin configuration bluetooth transmitter receiver bluetooth development board schematic bluetooth to rs232 schematic diagram bluetooth pinout simple block diagram for digital clock digital clock using gates schematic diagram of bluetooth technology
Contextual Info: STA2500D Bluetooth V2.1 + EDR "Lisbon" for automotive applications Features • Based on Ericsson technology licensing baseband core (EBC) ■ Bluetooth™ specification compliance: V2.1 + EDR (“Lisbon”) – Point-to-point, point-to-multipoint (up to 7

TEA5990

Abstract: PNX6710 PCF50623 GNS7560 an 6710 diagram circuit usb mp3 player with radio fm lcd CMOS Sensor to H.264 VFBGA100 Aero4229 nfc antenna
Contextual Info: Cellular system solution 6710 Compact, low-power system solution for HSDPA February 2009 www.stericsson.com This highly integrated 3.5G solution uses a fully validated modem and advanced multimedia technology to reduce design complexity and time-to-market. It provides an evolutionary step that brings ST-Ericsson leadership in EDGE and

SST32HF162

Abstract: SST32HF164 SST32HF202 SST32HF402 SST32HF802 LFBGA48 LFBGA-48 128Kx16
Contextual Info: Product Brief January 2002 ComboMemory TM Multi-Purpose Flash + SRAM SST32HF Series SST ComboMemory Advantages: Features ∆ Flash ∆ Integrated Flash and SRAM for Small Form Factor Design –Superior Reliability –Small Sector –Fast Erase –Low Power Consumption

EEPROM 16MB

Abstract: house map M29W166T AM29F100 M29F800B M29W160T M29F001 16mb eeprom M29F200 M29W004
Contextual Info: Standard and Advanced Architecture Flash DISCOVER ST NOW Flash memories are the most dynamic new driving force in nonvolatile memories. The flexibility they provide for in-system reprogramming and their low cost meet the needs as an enabling technology for many new applications. Nomadic applications, such

SST25VF128

Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
Contextual Info: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash

AI-0065

Abstract: AI020
Contextual Info: M29W800AT M29W800AB 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 80ns ■ PROGRAMMING TIME: 10µs typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)

ML86V8101

Abstract: ML610Q794G ML7147 ML610Q488 ML98 ML7138 ML7247-001
Contextual Info: Notes 1 The information contained in this document is provided as of october,2013. 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative as listed below) and verify the