M29W160 Search Results

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

M29W160

Abstract: M29W160BB M29W160BT sequential timer using 555
Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY „ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read „ ACCESS TIMES: 70, 90ns „ PROGRAMMING TIME – 10 s per Byte/Word typical „ 35 MEMORY BLOCKS

C1198

Abstract: M29W160
Contextual Info: AN1198 APPLICATION NOTE Software Drivers for the M29F160B and M29W160B Flash Memories CONTENTS • INTRODUCTION ■ THE M29F160B PROGRAMMING MODEL ■ WRITING C CODE FOR THE M29F160B ■ C LIBRARY FUNCTIONS PROVIDED ■ PORTING THE DRIVERS TO THE TARGET SYSTEM

C1649

Abstract: M29W160 m29w160eb date code format AN1649 M29W160E M29W160EB M29W160ET C1649.c
Contextual Info: AN1649 APPLICATION NOTE Software Drivers for the M29W160E Flash Memory CONTENTS • M29W160E PROGRAMMING MODEL – Bus Operations Commands and ■ STATUS REGISTER ■ A DETAILED EXAMPLE ■ HOW TO USE THE SOFTWARE DRIVER – General Considerations – Porting The Drivers To

M29W320FT

Abstract: M29W160FT M29W320FB Q002 M29W160FB TFBGA48
Contextual Info: M29W160FT M29W160FB M29W320FT M29W320FB 16 Mbit or 32 Mbit x 8 or x 16, boot block 3 V supply Flash memory Features • Supply voltage – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read – VPP = 12 V for Fast Program (optional,

Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

C1198

Abstract: M29W160 AN1198 8086 application notes M29F160BB M29F160BT M29W160BB M29W160BT M29W160DB M29W160DT
Contextual Info: AN1198 APPLICATION NOTE Software Drivers for the M29F160B, M29W160B and M29W160D Flash Memories CONTENTS • INTRODUCTION ■ THE M29F160B PROGRAMMING MODEL ■ WRITING C CODE FOR THE M29F160B ■ C LIBRARY FUNCTIONS PROVIDED ■ PORTING THE DRIVERS TO THE TARGET SYSTEM

M29W160DB

Abstract: M29W160DT
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME Figure 1. Packages

IEC61360-4

Abstract: EIA-724
Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1 Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME - 1 Ojas p e r B y t e /W o r d ty p ic a l

M29W160DB

Abstract: M29W160DT TFBGA48
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

38000h-3FFFF

Abstract: M29W160BB M29W160BT
Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory PRELIMINARY DATA • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

M29W160

Abstract: FBGA48 M29W160BB M29W160BT
Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 80ns FAST PROGRAMMING TIME – 13µs by Byte/Word typical

M29W160BB

Abstract: M29W160BT
Contextual Info: M29W160BT M29W160BB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 70ns ■ PROGRAMMING TIME 44 – 10µs per Byte/Word typical

Contextual Info: M29W160ET M29W160EB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY  SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read  ACCESS TIMES: 70, 90ns  PROGRAMMING TIME – 10µs per Byte/Word typical  35 MEMORY BLOCKS

TSOP48 outline

Abstract: M29W160DB M29W160DT TFBGA48 A/M29F010B(45/70/90/MT352/CG/M29W160DT
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

M29W320FT

Abstract: Q002 M29W160FB M29W160FT M29W320FB TFBGA48
Contextual Info: M29W160FT M29W160FB M29W320FT M29W320FB 16 Mbit or 32 Mbit x 8 or x 16, boot block 3 V supply Flash memory Features • Supply voltage – VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read – VPP = 12 V for Fast Program (optional,

M29W160DB

Abstract: M29W160DT TFBGA48
Contextual Info: M29W160DT M29W160DB 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ ACCESS TIME: 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte/Word typical

M29W160FT

Contextual Info: M29W160FT M29W160FB M29W320FT M29W320FB 16 Mbit or 32 Mbit x8 or x16, Boot Block 3V supply Flash memory Preliminary Data Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP = 12V for Fast Program (optional, available in the M29W320FT/B only)

C1198

Abstract: AN1185 AN1198 M29F160BB M29F160BT M29W160BB M29W160BT
Contextual Info: AN1198 APPLICATION NOTE Software Drivers for the M29F160B and M29W160B Flash Memories CONTENTS • INTRODUCTION ■ THE M29F160B PROGRAMMING MODEL ■ WRITING C CODE FOR THE M29F160B ■ C LIBRARY FUNCTIONS PROVIDED ■ PORTING THE DRIVERS TO THE TARGET SYSTEM