LH5268A Search Results

LH5268AD-10LL

Abstract: LH5268A
Contextual Info: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

ice power 200 asc

Contextual Info: LH5268A CMOS 64K 8K x 8 Static Ram FEATURES DESCRIPTION • 8,192 The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS proc­ ess technology. x 8 bit organization • Access times: 100 ns (MAX.) • Power consumption:

128X512

Contextual Info: LH5268A C M O S 6 4 K 8 K x 8 S tatic RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

Contextual Info: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

Contextual Info: LH5268A FEATURES 3.0 |liW Vcc = 3 V, TA = 25°C • • • • • Fully-static operation Three-state outputs Single +5 V power supply TTL compatible I/O Packages: 28-pin, 600-mil DIP 28-pin, 300-mil SK-DIP 28-pin, 450-mil SOP DESCRIPTION The LH5268A is a static RAM organized as 8,192 x 8

Contextual Info: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268Ais a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

LH5268A

Abstract: LH5268AD-10LL
Contextual Info: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CM OS process technology. • Access time: 100 ns (MAX.) • Power consumption:

LH5268A

Abstract: 5268A
Contextual Info: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 × 8 bit organization The LH5268A is a static RAM organized as 8,192 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

LH5268AD-10LL

Abstract: LH5268A
Contextual Info: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 × 8 bit organization The LH5268A is a static RAM organized as 8,192 × 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

Contextual Info: CMOS 64K 8K FEATURES • 8,192 x 8 bit organization • Access tim es: 70*/100 ns (MAX. • Power consum ption: Operating: 255 mW (MAX.) @ 70 ns 220 mW (MAX.) @ 100 ns 8) Static Ram x DESCRIPTION The LH5268ALL is a static RAM organized as 8,192 8 bits. It is fabricated using silicon-gate CM OS proc­

Contextual Info: LH5268A CMOS 64K 8K x 8 Static RAM FEATURES DESCRIPTION • 8,192 x 8 bit organization The LH5268A is a static RAM organized as 8,192 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 100 ns (MAX.) • Power consumption:

MB81C78A-35

Abstract: LH5164-10 MB81C78A MB81C78-45 LH5268A-10LL LH5164L-15 LC3664BL-10 LH5164D LH5164D/N-10L LC3664BL-12
Contextual Info: CMOS 6 4 K m £ tt £ ¡á£ÍEH OC X TAAC •ax ns) TCAC (ns) ■f y ? S t a t i c RAM ( 81 9 2 x 8 ) ft ft TOE ■ax (ns) TOH min (ns) TOD max (ns) TWP min (ns.) TDS IE (ns) TDH min (ns) TWD min (ns) TWR max (ns) V I or V C C (V) 2 8 P I N IDO max (mA)

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

Contextual Info: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A

LQ070T5BG01

Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
Contextual Info: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66

IR3Y29B

Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Contextual Info: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX

Contextual Info: MEMORIES Low voltage operation Bit Capacity configuration 16 k 64k x8 x8 ★ Access time Supply current ns MAX. Cycle time Operating Standby (ns) MIN. (mA) MAX. (mA) MAX. Model No. LH5116SN x8 x8 1M x 16 2M x 16 *1 *5 *7 Supply Operating voltage temp. (V)

LH521007AK-20

Contextual Info: STATIC RAM ☆ New product ★ Under development STATIC RAMs ♦ Features • The product lineup includes a wide variety of bit configurations x4, x8, x l6 , x l8 , x32 . • High-speed synchronous devices for the secondary cache memory are available for use with low-voltage, lowpower CPUs idpal for portable equipment.

LHS168

Abstract: LH52252A LH52252
Contextual Info: V .J 1 íVt! Static RAMs ★Under development Process Capacity Model No. Configuration Access time ns 70 -I 16k 2k Package 90 100 120 LH5116 J— I. 24 24 24 LH5116H 3 -T 24 24 24 - Z ÏÏ-J 1 24 24 24 C E , C S c o n tro l Data retention current : 0.2 pAjMAXj j

IR2E27A

Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Contextual Info: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080

operating

Abstract: LH52E1000
Contextual Info: MEMORIES Static RAMs W ★ Under development Low voltage operation Capacity confjguratj0n 16k x8 64k Model No. Access time ns 8 5 2 0 0 2 5 0 5 00 10 0 0 x8 LH5116S Supply voltage : 3 V ± 10% Operating temperature : 0 to 50*C LH5164AV Supply voltage : 2.7 to 5.5 V

100 10L AD

Abstract: LH521007AK-25 LH5168ST LH5168SHN lh5168 LH521002AK20
Contextual Info: MEMORIES • S ta tic R A M s Process Capacity ★ U nderdevelopm ent Configuration words Xbits Model No. Access tim e Supply current (ns) MAX. Cycle time operating/standby ImA) MAX. (ns) MIN. Supply voltage (V) Operating temperature (1C) Package LH5116/NA/D-10