LH538500C Search Results

42-PIN

Abstract: 44-PIN 48-PIN 42PIN
Contextual Info: CMOS 8M 1M x 8/512K × 16 Mask-Programmable ROM LH538500C FEATURES • 1,048,576 words × 8 bit organization (Byte mode) 524,288 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 µW (MAX.)

Contextual Info: CMOS 8M 1M X 8/512K x 16 Mask-Programmable ROM LH538500C FEATURES • 1,048,576 words x 8 bit organization PIN CONNECTIONS 42-PIN DIP TO P VIEW (Byte mode) r \ 42 □ n c ^18 C 1• a 17 C 2 41 □ As a7 C 3 40 Zl Ag Ag C 4 39 H A10 a 5 [I 5 38 H An 6 37 H a 12

Contextual Info: LH538500C • 1,048,576 words Byte mode PIN CONNECTIONS x 8 bit organization 524,288 words x 16 bit organization (Word mode) 42-PIN DIP TOP VIEW / A 18 H • Power consumption: Operating: 275 mW (MAX.) Standby: 550 \i\N (MAX.) • Static operation • TTL compatible I/O

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

LH231G

Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Contextual Info: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200

flash 64m

Contextual Info: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161

Contextual Info: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time

48 tsop flash pinout

Abstract: LH23512
Contextual Info: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)

IR2E27A

Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
Contextual Info: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080

Contextual Info: CMOS 8M 1M x 8/512K x 16 MROM FEATURES • 1,048,576 words x 8 bit organization (Byte mode) 524,288 words x 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550 (iW (MAX.) • Static operation