LH532100B Search Results

A1SH

Abstract: 32DIP 32-PIN LH532100B-1 A14C
Contextual Info: LH532100B-1 FEATURES CMOS 2M 256K x 8 Mask-Programmable ROM PIN CONNECTIONS • 262,144 words x 8 bit organization • Access time: 120 ns (MAX.) 32-PIN DIP 32-PIN SOP TOP VIEW f \ O E ^ O E i/D C C • Static operation • TTL compatible I/O • Three-state outputs

Contextual Info: C M OS 2M 256K x 8 M ask-Program m able ROM FEATURES • 262,144 x 8 bit organization • Access time: 120/150 ns (MAX.) • Low power consumption: Operating: 275 mW (MAX.) DESCRIPTION The LH532100B is a mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using

flash 64m

Contextual Info: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161

J-1100

Contextual Info: LH532100B-1 FEATURES • 262,144 words x 8 bit organization CMOS 2M 256K x 8 MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access time: 120 ns (MAX.) f • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 275 mW (MAX.)

DIC14

Contextual Info: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. CMOS 2M (256K x 8) M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW s • Three-state outputs • Single +5 V power supply • Power consumption:

Contextual Info: CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 w ords x 8 bit organization • Access tim e: 150 ns (MAX.) The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

32DIP

Abstract: 32-PIN LH532100B 277A5
Contextual Info: LH532100B CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 words × 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 32-PIN DIP

DIC20

Contextual Info: CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit m ask-program m able ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Operating: 275 mW (MAX.)

capacitor A7C

Abstract: 453J 32TSOP 32DIP 32-PIN A15H LH532100B
Contextual Info: CMOS 2M 256K x 8 M ask-Program m able ROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

500-101

Contextual Info: CMOS 2M 256K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

ICE ICC3

Abstract: sharp mask rom
Contextual Info: CMOS 2M 256K x 8 Mask Programmable ROM FEATURES • 262,144 x 8 bit organization • Access time: 120/150 ns (MAX.) • Low power consumption: DESCRIPTION The LH532100B is a mask programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

32DIP

Abstract: 32-PIN LH532100B-1 532100B1-6 timing DIAGRAM OF ROM
Contextual Info: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. • Static operation CMOS 2M (256K × 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW OE1/OE1/DC 1 32 VCC A16 2 31 DC • TTL compatible I/O

32DIP

Abstract: 32-PIN LH532100B CE-2212
Contextual Info: LH532100B CMOS 2M 256K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 262,144 words × 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS

Contextual Info: LH532100B-1 FEATURES • 262,144 words x 8 bit organization CMOS 2M 256K x 8 MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access time: 120 ns (MAX.) / O E ^Ô Ë ^D C H • Static operation • TTL compatible I/O • Three-state outputs • Power consumption:

32DIP

Abstract: 32-PIN LH532100B-1
Contextual Info: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. • Static operation CMOS 2M (256K × 8) MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW OE1/OE1/DC 1 32 VCC A16 2 31 DC • TTL compatible I/O A15 3 30 A17 4 29

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

lh57257

Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Contextual Info: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429

Contextual Info: CM O S 2M 256K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 262,144 x 8 bit organization T h e LH 5 321 00 B is a m ask-program m able R O M organized a s 262,144 x 8 bits. It is fabricated using silicon-gate C M O S p rocess technology. • Access time: 120/150 ns (MAX.)

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

IR3Y29B

Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
Contextual Info: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22

48 tsop flash pinout

Abstract: LH23512
Contextual Info: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page