LX5512E Search Results

LX5512E

Abstract: LX5512E-LQ LX5512E-LQT
Contextual Info: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

Contextual Info: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

diode dc components m7 footprint

Abstract: ofdm amplifier LX5512E LX5512E-LQ LX5512E-LQT 2.4 ghZ rf transistor OM5040
Contextual Info: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

LX5512E

Abstract: LX5512E-LQ LX5512E-LQT
Contextual Info: LX5512E I N T E G R A T E D InGaP HBT 2.4-2.5GHz Power Amplifier P R O D U C T S P RELIMINARY D ATA S HEET KEY FEATURES DESCRIPTION For 18dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 2 %, and consumes 120 mA total DC

Contextual Info: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

LX5512E

Abstract: LX5512ELQ LX5512ELQ-TR bipolar transistor 2.4 ghz s-parameter bipolar transistor 2.45 ghz s-parameter
Contextual Info: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

bipolar transistor 2.4 ghz s-parameter

Abstract: bipolar transistor 2.45 ghz s-parameter LX5512E LX5512ELQ LX5512ELQ-TR dc m7 footprint 2.45 Ghz power amplifier 30 db
Contextual Info: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

Contextual Info: LX5512E TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

diode dc components m7 footprint

Abstract: ofdm amplifier LX5512E LX5512E-LQ LX5512E-LQT
Contextual Info: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

Contextual Info: LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power 64QAM, 54Mbps , the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin

PW130

Abstract: ADVANCED ANALOGIC TECHNOLOGY max3353 GlobTek PM Qualcomm ACPM-7813 ACPM-7833 ACPM-7891 ADL5552 "power sourcing equipment"
Contextual Info: P O W E R F O R P O R TA B L E E L E C T R O N I C S Wireless and Broadband Driving the Portable Power Market by Linnea C. Brush B ROADBAND AND WIRELESS Semiconductor advances are mobile handsets. Agilent Technologies are two technologies currently enabling many of these new technolo www.agilent.com has introduced a