Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series connection) • Forward voltage VF , optimum for low voltage rectification
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MA3J742
MA742)
MA3X716
MA716)
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MA716
Abstract: MA3X716 panasonic ma diodes sc-59 Marking
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Unit : mm + 0.2 Silicon epitaxial planar type 2.8 − 0.3 0.65 ± 0.15 1.45 0.95 1.5 1 0.95 3 + 0.1 0.4 − 0.05 + 0.2 2.9 − 0.05 For switching circuits For wave detection circuit 1.9 ± 0.2 0.65 ± 0.15 + 0.25
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MA3X716
MA716)
O-236
SC-59
MA716
MA3X716
panasonic ma diodes sc-59 Marking
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MA3J742
Abstract: MA3X716 MA716 MA742
Text: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (double connection) • Forward voltage VF , optimum for low voltage rectification
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MA3J742
MA742)
MA3X716
MA716)
MA3J742
MA3X716
MA716
MA742
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MARKING 103
Abstract: marking symbol M1U MA3X704A MA3X716 MA704A MA716
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter 0 to 0.1 Symbol Rating Unit VR 30 V Maximum peak reverse voltage
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MA3X716
MA716)
MA3X704A
MA704A)
MARKING 103
marking symbol M1U
MA3X704A
MA3X716
MA704A
MA716
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Reverse voltage (DC) VR 30 V Peak forward current
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MA3X716
MA716)
MA3X704A
MA704A)
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MA3X704A
Abstract: MA3X716 MA704A MA716
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 (0.95) (0.95)
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2002/95/EC)
MA3X716
MA716)
MA3X704A
MA704A)
MA3X704A
MA3X716
MA704A
MA716
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Symbol Rating Unit VR 30 V Peak forward current IFM 150 mA Single
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MA3X716
MA716)
MA3X704A
MA704A)
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MA3X716
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X716 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Symbol Peak forward current Single Forward current (DC) Single 1.45 0.95 3 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Rating VR 30 V 150 mA Series 1 : Anode 1 2 : Cathode 2
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MA3X716
O-236
SC-59
MA3X704As
MA3X716
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MA3X704A
Abstract: MA3X716 MA704A MA716
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05
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2002/95/EC)
MA3X716
MA716)
MA3X704A
MA704A)
MA3X704A
MA3X716
MA704A
MA716
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter 0 to 0.1 Symbol Rating Unit VR 30 V Maximum peak reverse voltage
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MA3X716
MA716)
MA3X704A
MA704A)
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ma3j742
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series
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2002/95/EC)
MA3J742
MA742)
MA3X716
MA716)
ma3j742
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MA3J742
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3J742 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Two MA3X716s are contained in one package (2-pin series connection) • Optimum for low-voltage rectification because of its low forward
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MA3J742
MA3X716s
MA3J742
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MA3X704A
Abstract: MA3X716 MA704A MA716
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter Rating Unit VR 30 V Peak forward current IFM 150 mA
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MA3X716
MA716)
SC-59
MA3X704A
MA704A)
MA3X704A
MA3X716
MA704A
MA716
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MA3J742
Abstract: MA3X716 MA716 MA742
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series
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2002/95/EC)
MA3J742
MA742)
MA3X716
MA716)
MA3J742
MA3X716
MA716
MA742
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05
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2002/95/EC)
MA3X716
MA716)
MA3X704A
MA704A)
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MA3X716
Abstract: MA3X704A MA704A MA716
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05
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2002/95/EC)
MA3X716
MA716)
MA3X704A
MA704A)
MA3X716
MA3X704A
MA704A
MA716
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Untitled
Abstract: No abstract text available
Text: ADS5424 www.ti.com SLWS157B − JANUARY 2005 − REVISED JANUARY 2010 14 Bit, 105 MSPS Analog-to-Digital Converter D 52 Pin HTQFP Package With Exposed FEATURES D 14 Bit Resolution D 105 MSPS Maximum Sample Rate D SNR = 74 dBc at 105 MSPS and 50-MHz IF D SFDR = 93 dBc at 105 MSPS and 50-MHz IF
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ADS5424
SLWS157B
50-MHz
AD6644/45
-405C
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Untitled
Abstract: No abstract text available
Text: ADS5411 www.ti.com SLAS487A − SEPTEMBER 2005 − REVISED JANUANRY 2010 11 Bit, 105 MSPS Analog-to-Digital Converter D 52 Pin HTQFP Package With Exposed FEATURES D 11 Bit Resolution D 105 MSPS Maximum Sample Rate D SNR = 66.4 dBc at 105 MSPS and 50 MHz IF
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ADS5411
SLAS487A
-405C
ADS5423,
ADS5424,
AD6645
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Untitled
Abstract: No abstract text available
Text: ADS5423-EP www.ti.com SGLS332C – JUNE 2006 – REVISED OCTOBER 2006 14-Bit 80-MSPS Analog-to-Digital Converter FEATURES • • • • • • • • • • • 1 Controlled Baseline – One Assembly – One Test Site – One Fabrication Site Extended Temperature Performance of –55°C
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ADS5423-EP
SGLS332C
14-Bit
80-MSPS
50-MHz
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Untitled
Abstract: No abstract text available
Text: ADS5424-EP www.ti.com SGLS331C – JUNE 2006 – REVISED OCTOBER 2006 14-Bit 105-MSPS Analog-to-Digital Converter FEATURES • • • • • • • • • 1 Controlled Baseline – One Assembly – Test Site – One Fabrication Site Extended Temperature Performance of –55°C
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ADS5424-EP
SGLS331C
14-Bit
105-MSPS
50-MHz
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Untitled
Abstract: No abstract text available
Text: ADS5423 www.ti.com SLWS160 − FEBRUARY 2005 14 Bit, 80 MSPS Analog-to-Digital Converter D 52 Pin HTQFP Package With Exposed FEATURES D 14 Bit Resolution D 80 MSPS Maximum Sample Rate D SNR = 74 dBc at 80 MSPS and 50 MHz IF D SFDR = 94 dBc at 80 MSPS and 50 MHz IF
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ADS5423
SLWS160
AD6644/45
-405C
CDC7005
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Untitled
Abstract: No abstract text available
Text: ADS5424-SP www.ti.com SLWS194D – MAY 2008 – REVISED SEPTEMBER 2013 CLASS V, 14-BIT, 105-MSPS ANALOG-TO-DIGITAL CONVERTER Check for Samples: ADS5424-SP FEATURES 1 • • • • • • • • • • • 14-Bit Resolution 105-MSPS Maximum Sample Rate
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ADS5424-SP
SLWS194D
14-BIT,
105-MSPS
14-Bit
52-Pin
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405C
Abstract: AD6645 ADS5423 CDC7005 OPA695 THS4509
Text: ADS5423 www.ti.com SLWS160A − FEBRUARY 2005 − REVIISED JANUARY 2010 14 Bit, 80 MSPS Analog-to-Digital Converter D 52 Pin HTQFP Package With Exposed FEATURES D 14 Bit Resolution D 80 MSPS Maximum Sample Rate D SNR = 74 dBc at 80 MSPS and 50 MHz IF D SFDR = 94 dBc at 80 MSPS and 50 MHz IF
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ADS5423
SLWS160A
AD6644/45
-405C
405C
AD6645
ADS5423
CDC7005
OPA695
THS4509
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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