MA3X716 Search Results

Contextual Info: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series connection) • Forward voltage VF , optimum for low voltage rectification

MA716

Abstract: MA3X716 panasonic ma diodes sc-59 Marking
Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Unit : mm + 0.2 Silicon epitaxial planar type 2.8 − 0.3 0.65 ± 0.15 1.45 0.95 1.5 1 0.95 3 + 0.1 0.4 − 0.05 + 0.2 2.9 − 0.05 For switching circuits For wave detection circuit 1.9 ± 0.2 0.65 ± 0.15 + 0.25

MA3J742

Abstract: MA3X716 MA716 MA742
Contextual Info: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (double connection) • Forward voltage VF , optimum for low voltage rectification

MARKING 103

Abstract: marking symbol M1U MA3X704A MA3X716 MA704A MA716
Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter 0 to 0.1 Symbol Rating Unit VR 30 V Maximum peak reverse voltage

Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Reverse voltage (DC) VR 30 V Peak forward current

MA3X704A

Abstract: MA3X716 MA704A MA716
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 (0.95) (0.95)

Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Symbol Rating Unit VR 30 V Peak forward current IFM 150 mA Single

MA3X716

Contextual Info: Schottky Barrier Diodes SBD MA3X716 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Symbol Peak forward current Single Forward current (DC) Single 1.45 0.95 3 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Rating VR 30 V 150 mA Series 1 : Anode 1 2 : Cathode 2

MA3X704A

Abstract: MA3X716 MA704A MA716
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter 0 to 0.1 Symbol Rating Unit VR 30 V Maximum peak reverse voltage

ma3j742

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series

MA3J742

Contextual Info: Schottky Barrier Diodes SBD MA3J742 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Two MA3X716s are contained in one package (2-pin series connection) • Optimum for low-voltage rectification because of its low forward

MA3X704A

Abstract: MA3X716 MA704A MA716
Contextual Info: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter Rating Unit VR 30 V Peak forward current IFM 150 mA

MA3J742

Abstract: MA3X716 MA716 MA742
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

MA3X716

Abstract: MA3X704A MA704A MA716
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

Contextual Info: ADS5424 www.ti.com SLWS157B − JANUARY 2005 − REVISED JANUARY 2010 14 Bit, 105 MSPS Analog-to-Digital Converter D 52 Pin HTQFP Package With Exposed FEATURES D 14 Bit Resolution D 105 MSPS Maximum Sample Rate D SNR = 74 dBc at 105 MSPS and 50-MHz IF D SFDR = 93 dBc at 105 MSPS and 50-MHz IF

Contextual Info: ADS5411 www.ti.com SLAS487A − SEPTEMBER 2005 − REVISED JANUANRY 2010 11 Bit, 105 MSPS Analog-to-Digital Converter D 52 Pin HTQFP Package With Exposed FEATURES D 11 Bit Resolution D 105 MSPS Maximum Sample Rate D SNR = 66.4 dBc at 105 MSPS and 50 MHz IF

Contextual Info: ADS5423-EP www.ti.com SGLS332C – JUNE 2006 – REVISED OCTOBER 2006 14-Bit 80-MSPS Analog-to-Digital Converter FEATURES • • • • • • • • • • • 1 Controlled Baseline – One Assembly – One Test Site – One Fabrication Site Extended Temperature Performance of –55°C

Contextual Info: ADS5424-EP www.ti.com SGLS331C – JUNE 2006 – REVISED OCTOBER 2006 14-Bit 105-MSPS Analog-to-Digital Converter FEATURES • • • • • • • • • 1 Controlled Baseline – One Assembly – Test Site – One Fabrication Site Extended Temperature Performance of –55°C

Contextual Info: ADS5423 www.ti.com SLWS160 − FEBRUARY 2005 14 Bit, 80 MSPS Analog-to-Digital Converter D 52 Pin HTQFP Package With Exposed FEATURES D 14 Bit Resolution D 80 MSPS Maximum Sample Rate D SNR = 74 dBc at 80 MSPS and 50 MHz IF D SFDR = 94 dBc at 80 MSPS and 50 MHz IF

Contextual Info: ADS5424-SP www.ti.com SLWS194D – MAY 2008 – REVISED SEPTEMBER 2013 CLASS V, 14-BIT, 105-MSPS ANALOG-TO-DIGITAL CONVERTER Check for Samples: ADS5424-SP FEATURES 1 • • • • • • • • • • • 14-Bit Resolution 105-MSPS Maximum Sample Rate

405C

Abstract: AD6645 ADS5423 CDC7005 OPA695 THS4509
Contextual Info: ADS5423 www.ti.com SLWS160A − FEBRUARY 2005 − REVIISED JANUARY 2010 14 Bit, 80 MSPS Analog-to-Digital Converter D 52 Pin HTQFP Package With Exposed FEATURES D 14 Bit Resolution D 80 MSPS Maximum Sample Rate D SNR = 74 dBc at 80 MSPS and 50 MHz IF D SFDR = 94 dBc at 80 MSPS and 50 MHz IF

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the