MA4E2508 Search Results

Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required

schottky diode MACOM SPICE model Cjpar

Abstract: MACOM Schottky Diode
Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required

MA4E2502

Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer
Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required

soft solder die bonder

Contextual Info: MA4E2508 Series SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features V 1.00 Case Style 1112 Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch

MA4E2508L-1112

Abstract: MA4E2502 MA4E2508L-1112T MA4E2508L-1112W
Contextual Info: MA4E2508L-1112 SURMOUNTTM Low Barrier Silicon Schottky Diodes: Anti-Parallel Pair V 1.00 Case Style 1112 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch

MA4E2508L-1112

Abstract: MA4E2502 MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508H-1112
Contextual Info: SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

Contextual Info: > « fc ç ô M Preliminary Specification m a n A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V 2.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, M ultilayer Metalization with a Diffusion

PH1819-60

Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Contextual Info: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies

MA4E2502L

Contextual Info: V f lf c w H SurMount Chip Schottky Diodes SurMount Chip Surface Mount Monolithic Low Barrier Schottky Diodes M A 4 E 2 5 0 0 Series Features • Singles, Pairs, Ring and Crossover Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization

Contextual Info: an A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours

MAAM-008863

Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Contextual Info: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America

ma4e250

Abstract: MA4E2503L
Contextual Info: Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features ● ● ● ● ● ● ● ● Singles, Pairs, Tees, Ring and Cross-over Quads Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours

4e253

Contextual Info: S u r M o u n t C h ip S c h o t t k y D io d e s SurMount Chip Surface Mount Monolithic Low Barrier Schottky Diodes M A 4 E 2 5 0 0 Series Features • Singles, Pairs, Ring and Crossover Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization

Contextual Info: M a n A M P c o m p an y Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours