MA4E250 Search Results
MA4E250 Price and Stock
MACOM MA4E2508M-1112RF DIODE SCHOTTKY 5V 50MW DIE |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MA4E2508M-1112 | Tray | 2,900 | 100 |
|
Buy Now | |||||
![]() |
MA4E2508M-1112 |
|
Get Quote | ||||||||
![]() |
MA4E2508M-1112 | 600 |
|
Buy Now | |||||||
MACOM MA4E2502H-1246RF DIODE SCHOTTKY 5V 50MW DIE |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MA4E2502H-1246 | Bulk | 800 | 100 |
|
Buy Now | |||||
![]() |
MA4E2502H-1246 |
|
Get Quote | ||||||||
![]() |
MA4E2502H-1246 | 700 |
|
Buy Now | |||||||
MACOM MA4E2501L-1290RF DIODE SCHOTTKY 5V 50MW CHIP |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MA4E2501L-1290 | Tray | 700 | 100 |
|
Buy Now | |||||
![]() |
MA4E2501L-1290 | 1,300 |
|
Buy Now | |||||||
![]() |
MA4E2501L-1290 | 700 |
|
Buy Now | |||||||
MACOM MA4E2502L-1246RF DIODE SCHOTTKY 5V 50MW DIE |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MA4E2502L-1246 | Bulk | 100 |
|
Buy Now | ||||||
![]() |
MA4E2502L-1246 | 3,200 |
|
Buy Now | |||||||
![]() |
MA4E2502L-1246 | 700 |
|
Buy Now | |||||||
MACOM MA4E2508H-1112Schottky Diodes & Rectifiers Sch,AP,High,Bar,Surmount,Chip |
|||||||||||
Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
![]() |
MA4E2508H-1112 | 500 |
|
Buy Now | |||||||
![]() |
MA4E2508H-1112 | 800 |
|
Buy Now |
MA4E250 Datasheets (27)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MA4E2501-1290 |
![]() |
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2501L-1290 | M/A-COM | SURMOUNT Low Barrier Si Single Schottky Diode | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2501L-1290T |
![]() |
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2501L-1290W |
![]() |
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502 |
![]() |
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502H |
![]() |
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502H-1246 |
![]() |
DIODE SCHOTTKY DIODE 5V 0.02A G4 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502H-1246T |
![]() |
DIODE SCHOTTKY DIODE 5V 0.02A DO-201AD T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502H-1246W |
![]() |
DIODE SCHOTTKY DIODE 5V 0.02A TO | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502L |
![]() |
DIODE SCHOTTKY DIODE 3V 2DO-41 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502L-1246 | M/A-COM | RF Diodes, Discrete Semiconductor Products, DIODE,SCHOTTKY,SGL_JCT, | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502L-1246 |
![]() |
DIODE SCHOTTKY DIODE 5V 0.02A TO | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502L-1246T |
![]() |
DIODE SCHOTTKY DIODE 5V 0.02A TO T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502L-1246W |
![]() |
DIODE SCHOTTKY DIODE 5V 0.02A DO-41 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502M |
![]() |
SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502M-1246 |
![]() |
DIODE SCHOTTKY DIODE 5V 0.02A P600 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502M-1246T |
![]() |
DIODE SCHOTTKY DIODE 5V 0.02A TO T/R | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2502M-1246W |
![]() |
DIODE SCHOTTKY DIODE 5V 0.02A A-405 | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2508 |
![]() |
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MA4E2508H |
![]() |
SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair | Original |
MA4E250 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required |
Original |
MA4E2508 | |
schottky diode MACOM SPICE model
Abstract: schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family
|
Original |
MA4E2502 schottky diode MACOM SPICE model schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family | |
schottky diode MACOM SPICE model Cjpar
Abstract: MACOM Schottky Diode
|
Original |
MA4E2508 schottky diode MACOM SPICE model Cjpar MACOM Schottky Diode | |
MA4E2502L-1246
Abstract: MA4E2502 ma*2502 MA4E2502H MA4E2502L MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W MADS-002502
|
Original |
MA4E2502 MA4E2502L-1246 ma*2502 MA4E2502H MA4E2502L MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W MADS-002502 | |
Contextual Info: > « fc ç ô M Preliminary Specification m a n A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V 2.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, M ultilayer Metalization with a Diffusion |
OCR Scan |
MIL-S-883 MA4E2500 MA4E2500L MA4E2544L MA4E2545L MA4E2514L MA4E2515L | |
65rjContextual Info: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide |
Original |
MA4E2502 65rj | |
Contextual Info: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide |
Original |
MA4E2502 | |
0201 footprint
Abstract: MA4E2501-1290 MA4E2501L-1290 MA4E2501L-1290W
|
Original |
MA4E2501-1290 600x300um) MA4E2501L-1290 0201 footprint MA4E2501L-1290W | |
Contextual Info: an A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours |
OCR Scan |
MIL-S-883 MA4E2500 MA4E2500L MA4E2544L MA4E2545L MA4E2514L MA4E2515L | |
MA4E2502
Abstract: MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer
|
Original |
MA4E2508 MA4E2502 MA4E2508H MA4E2508L MA4E2508L-1112 MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508M-1112 Schottky diode wafer | |
MA4E2502L
Abstract: 50E-01
|
Original |
MA4E2502L 56E-08 95E-15 37E-02 76E-14 0E-01 00E-05 50E-01 | |
MA4E2502L-1246T
Abstract: ma*2502 MA4E2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W
|
Original |
MA4E2502 MA4E2502L-1246W MA4E2502L-1246 MA4E2502L-1246T MA4E2502M-1246W MA4E2502M-1246 MA4E2502M-1246T MA4E2502H-1246W MA4E2502H-1246 MA4E2502L-1246T ma*2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W | |
Contextual Info: MA4E2501L-1290 SURMOUNT Low Barrier 0201 Silicon Schottky Diode Rev. V2 Features • Extremely Low Parasitic Capacitance and Inductance. • Extremely Small 0201 600x300um Footprint • Surface Mountable in Microwave Circuits. No Wire bonds Required. • Rugged HMIC Construction with Polyimide |
Original |
MA4E2501L-1290 600x300um) MA4E2501L-1290 | |
ma4e250
Abstract: MA4E2503L
|
Original |
MA4E2500 MIL-S-883 MA4E2500L MA4E2544L MA4E2545L MA4E2514L MA4E2515L ma4e250 MA4E2503L | |
|
|||
MA4E2502_Series
Abstract: MA4E2502 Series mads-002502-1246hp MA4E2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246
|
Original |
MA4E2502 MA4E2502_Series MA4E2502 Series mads-002502-1246hp MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246 | |
Contextual Info: M a n A M P c o m p an y Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours |
OCR Scan |
MIL-S-883 MA4E2500 MA4E2500L MA4E2544L MA4E2545L MA4E2514L MA4E2515L | |
MA4E2508L-1112
Abstract: MA4E2502 MA4E2508L-1112T MA4E2508L-1112W
|
Original |
MA4E2508L-1112 MA4E2508L-1112 MA4E2502 MA4E2508L-1112T MA4E2508L-1112W | |
low barrier schottky
Abstract: MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom
|
Original |
MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 low barrier schottky MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom | |
MA4E2508L-1112
Abstract: MA4E2502 MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508H-1112
|
Original |
MA4E2508 MA4E2508M MA4E2508H MA4E2508L-1112 MA4E2502 MA4E2508H MA4E2508L MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508H-1112 | |
MA4E2502
Abstract: MA4E2514 MA4E2514L MA4E2514L-1116 MA4E2514L-1116W MA4E2514M MA4E2514M-1116 MA4E2514M-1116W
|
Original |
MA4E2514 MA4E2514L MA4E2514M MA4E2514L-1116W MA4E2514L-1116 MA4E2514L-1116T MA4E2514M-1116W MA4E2514M-1116 MA4E2502 MA4E2514L MA4E2514L-1116 MA4E2514L-1116W MA4E2514M MA4E2514M-1116 MA4E2514M-1116W | |
0201 footprint
Abstract: MA4E2501-1290 MA4E2501L-1290 MA4E2501L-1290T MA4E2501L-1290W
|
Original |
600x300um) MA4E2501-1290 MA4E2501L-1290 MA4E2501L-1290 MA4E2501L-1290W 0201 footprint MA4E2501-1290 MA4E2501L-1290T MA4E2501L-1290W | |
Contextual Info: SURMOUNT TM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair MA4E2514 SERIES Version 3.00 Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits , No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection |
Original |
MA4E2514 MA4E2514L MA4E2514M | |
smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
|
Original |
Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter | |
Contextual Info: MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair M/A-COM Products Rev. V4 Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide |
Original |
MA4E2514 |