MCM54400AN Search Results

MCM91430S

Abstract: motorola 30-pin simm memory dynamic 30-pin simm memory
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 is a 9M dynamic random access memory DRAM module orga­ nized as 1,048,576 x 9 bits. The module is a 30-lead single -in-line memory module (SIMM) consisting of two MCM54400AN and one 1M DRAM housed in a 20/26 J lead small outline package (SOJ) and mounted on a substrate along with a 0.22 pF

TCA 3189

Abstract: MCM81430S
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 1Mx8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCMB1430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead single-in-line memory modules (SIMM) consisting of two MCM54400AN DRAMs

MCM81430S80

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 8 Bit Dynamic Random Access Module MCM81430 MCM8L1430 The MCM81430 and MCM8L1430 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bits. The modules are 30-lead singlein-line memory modules (SIMM) consisting of two MCM54400AN DRAMs housed in

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91430 1M x 9 Bit Dynamic Random Access Memory Module The MCM91430 is a 9M dynamic random access memory DRAM module orga­ nized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM54400AN and one 1M DRAM housed in a 20/26 J-lead

Contextual Info: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module The MCM81430 is an 8M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 8 bits. The module is a 30-lead single-in-line memory mod­ ule (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lead small

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module The MCM81430 is an 8M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 8 bits. The module is a 30-lead s in gle -in-line memory module (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lea d

32130S

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32130 1M x 32 Bit Dynamic Random Access Memory Module The MCM32130 is a 32M dynamic random access memory DRAM module organized as 1,048,576 x 32 bits. The module is a 72-lead single-in-line memory module (SIMM) consisting of eight MCM54400AN DRAMs housed in standard 300

5Bp power control

Abstract: Motorola CMOS Dynamic RAM 2m x 8 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM36204/D SEMICONDUCTOR TECHNICAL DATA MCM36204 2M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36204 is a 72M dynamic random access memory DRAM module organized as 2,097,152 x 36 bits. The module is a double-sided 72-lead single-inline memory module (SIMM) consisting of eighteen MCM54400AN DRAMs

MCM81430

Abstract: MCM81430S70 5Bp power control 30 pin simm memory dynamic MCM81430S60 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM81430/D SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module S PACKAGE SIMM MODULE CASE 839A-01 The MCM81430 is an 8M dynamic random access memory DRAM module organized as 1,048,576 x 8 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lead small

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MCM401OOAS70

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM40100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40100 is a 40M dynamic random access memory DRAM modules organized as 1,048,576 x 40 bits. The module is a 72-lead single -in-line

ic nn 5198 k

Abstract: nn 5198 k mcm54400
Contextual Info: M OTOROLA SEMICONDUCTOR -TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM40200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40200 is an SOM dynamic random access memory DRAM module organized as 2,097,152 x 40 bits. The module is a double-sided 72-lead

MCM54400A-C

Abstract: mcm54400az M5440 M54400
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The MCM54400A is a 0.7p CM OS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with CMOS silicon-gate pro­

MCM32130SH70

Abstract: simm 72 dram Nippon capacitors MCM32130-70
Contextual Info: MOTOROLA Order this document by MCM32130/D SEMICONDUCTOR TECHNICAL DATA MCM32130 MCM32T100 1M x 32 Bit Dynamic Random Access Memory Module The MCM32130 is a 32M dynamic random access memory DRAM module organized as 1,048,576 x 32 bits. The module is a 72–lead single–in–line memory

simm 72 dram

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM36104/D SEMICONDUCTOR TECHNICAL DATA MCM36104 1M x 36 Bit ECC Dynamic Random Access Memory Module for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead single-in-line memory

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 36 Bit ECC Dynamic Random Access Memory Module MCM36104 for Error Correction Applications The MCM36104 is a 36M dynamic random access memory DRAM module organized as 1,048,576 x 36 bits. The module is a 72-lead s in gle -in-line

MCM54400AZ60

Abstract: mcm54400a MCM54400A-70 mcm54400az MCM5L4400AZ60 MCM5L4400A-70 mcm54400 MCM54400AN60
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A MCM5L4400A 1M x 4 CMOS Dynamic RAM Fast Page Mode The M C M 54400A is a 0 .7 ji CM OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with CMOS silicon-gate process

4116 Dram

Abstract: 32T200
Contextual Info: MOTOROLA SEMICONDUCTOR -TECHNICAL DATA MCM32230 MCM32T200 2M x 32 Bit Dynamic Random Access Memory Module The MCM32230 is a 64M dynamic random access memory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single­

SC63594FN

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM72100 Product Preview 1M x 72 Bit Dynamic Random Access Memory Module TOP VIEW The MCM72100 is a dynamic random access memory DRAM module organized as 1,048,576 x 72 bits. The module is a 100-lead single-in-line memory module

32L230

Abstract: mcm54400
Contextual Info: MOTOROLA wm SEM ICONDUCTOR TECHNICAL DATA MCM32230 MCM32L230 2M x 32 Bit Dynamic Random Access Memory Module The MCM32230S is a 64M, dynamic random access memory DRAM module organized as 2,097,152 x 32 bits. The module is a 72-lead double sided single-in-line

MCM40100

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM40100/D SEMICONDUCTOR TECHNICAL DATA MCM40100 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40100 is a 40M dynamic random access memory DRAM modules organized as 1,048,576 x 40 bits. The module is a 72–lead single–in–line

MCM40200

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM40200/D SEMICONDUCTOR TECHNICAL DATA MCM40200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40200 is an 80M dynamic random access memory DRAM module organized as 2,097,152 x 40 bits. The module is a double–sided 72–lead

MCM54400AZ70

Abstract: MCM54400AN70 MCM54400AZ80 MCM54400A-C MCM54400AN80 MCM54400A-C70 313X0
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54400A-C Advance Information 1M x 4 CMOS Dynamic RAM Fast Page Mode Operating Temperature - 40°C to + 85°C The M C M 54400A is a 0 .7 fi C M OS high-speed dynam ic random access memory. It is organized as 1,048,576 four-bit w ords and fabricated with C M OS silicon-gate process